Maximilian Dammann

14 papers Journal 12Unranked 2
YearRankTypeTitle / Venue / Authors
2021 — conf
Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress.
IRPS
Maximilian Dammann, Martina Baeumler, Tobias Kemmer, Helmer Konstanzer, Peter Brückner, Sebastian Krause, Andreas Graff, Michél Simon-Najasek
2018 J jnl
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology.
Microelectron. Reliab.
Maximilian Dammann, Martina Baeumler, Peter Brückner, Tobias Kemmer, Helmer Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay
2017 J jnl
Influence of air pollutants on the lifetime of LEDs and analysis of degradation effects.
Microelectron. Reliab.
Andreas Zibold, Maximilian Dammann, Ralf Schmidt, Helmer Konstanzer, Michael Kunzer
2017 J jnl
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications.
Microelectron. Reliab.
Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Michael Mikulla, Andreas Graff, Michél Simon-Najasek
2015 J jnl
Degradation of 0.25 μm GaN HEMTs under high temperature stress test.
Microelectron. Reliab.
Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle
2015 — conf
High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs.
IRPS
Matthias Wespel, Maximilian Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit, B. Weiss, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
2014 J jnl
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices.
Microelectron. Reliab.
Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
2014 J jnl
Sequential Atmospheric Pressure Plasma-Assisted Laser Ablation of Photovoltaic Cover Glass for Improved Contour Accuracy.
Micromachines
Christoph Gerhard, Maximilian Dammann, Stephan Wieneke, Wolfgang Viöl
2013 J jnl
Qualification of 50 V GaN on SiC technology for RF power amplifiers.
Microelectron. Reliab.
P. J. van der Wel, T. Rödle, Benoit Lambert, Hervé Blanck, Maximilian Dammann
2011 J jnl
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs.
Microelectron. Reliab.
M. Cäsar, Maximilian Dammann, Vladimir Polyakov, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
2009 J jnl
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems.
Microelectron. Reliab.
Maximilian Dammann, W. Pletschen, Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Stefan Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, Martin Fagerlind, Einar Örn Sveinbjörnsson
2004 J jnl
Reliability of 70 nm metamorphic HEMTs.
Microelectron. Reliab.
Maximilian Dammann, Arnulf Leuther, Rüdiger Quay, M. Meng, Helmer Konstanzer, W. Jantz, Michael Mikulla
2002 J jnl
High-field step-stress and long term stability of PHEMTs with different gate and recess lengths.
Microelectron. Reliab.
Paolo Cova, Roberto Menozzi, Maximilian Dammann, T. Feltgen, W. Jantz
2002 J jnl
Reliability of Metamorphic HEMTs for Power Applications.
Microelectron. Reliab.
Maximilian Dammann, F. Benkhelifa, M. Meng, W. Jantz