Matthew R. Wordeman

14 papers C 1Journal 11Unranked 2
YearRankTypeTitle / Venue / Authors
2016 — conf
Thermal analysis of multi-layer functional 3D logic stacks.
3DIC
Michael Scheuermann, Shurong Tian, Raphael Robertazzi, Matthew R. Wordeman, C. Bergeron, H. Jacobson, Phillip J. Restle, Joel Silberman, Christy Tyberg
2016 J jnl
Three-Dimensional Dynamic Random Access Memories Using Through-Silicon-Vias.
IEEE J. Emerg. Sel. Topics Circuits Syst.
Toshiaki Kirihata, John Golz, Matthew R. Wordeman, Pooja Batra, Gary W. Maier, Norman Robson, Troy L. Graves-abe, Daniel Berger, Subramanian S. Iyer
2012 — conf
A shorted global clock design for multi-GHz 3D stacked chips.
VLSIC
Liang-Teck Pang, Phillip J. Restle, Matthew R. Wordeman, Joel A. Silberman, Robert L. Franch, Gary W. Maier
2008 J jnl
Wafer-level 3D integration technology.
IBM J. Res. Dev.
Steven J. Koester, Albert M. Young, Roy R. Yu, Sampath Purushothaman, Kuan-Neng Chen, Douglas C. La Tulipe Jr., Narender Rana, Leathen Shi, Matthew R. Wordeman, Edmund J. Sprogis
2000 J jnl
1-GHz fully pipelined 3.7-ns address access time 8 k×1024 embedded synchronous DRAM macro.
IEEE J. Solid State Circuits
Osamu Takahashi, Sang H. Dhong, Manabu Ohkubo, Shohji Onishi, Robert H. Dennard, Robert Hannon, Scott Crowder, Subramanian S. Iyer, Matthew R. Wordeman, Bijan Davari, William B. Weinberger, Naoaki Aoki
2000 J jnl
A 7F
IEEE J. Solid State Circuits
Heinz Hoenigschmid, Alexander Frey, John K. DeBrosse, Toshiaki Kirihata, Gerhard Mueller, Daniel W. Storaska, Gabriel Daniel, Gerd Frankowsky, Kevin P. Guay, David R. Hanson, Louis Lu-Chen Hsu, Brian Ji, Dmitry G. Netis, Steve Panaroni, Carl Radens, Armin M. Reith, Hartmud Terletzki, Oliver Weinfurtner, Johann Alsmeier, Werner Weber, Matthew R. Wordeman
1999 J jnl
A 390-mm
IEEE J. Solid State Circuits
Toshiaki Kirihata, Gerhard Mueller, Brian Ji, Gerd Frankowsky, Joseph M. Ross, Hartmud Terletzki, Dmitry G. Netis, Oliver Weinfurtner, David R. Hanson, Gabriel Daniel, Louis Lu-Chen Hsu, Daniel W. Storaska, Armin M. Reith, Marco A. Hug, Kevin P. Guay, Manfred Selz, Peter Poechmueller, Heinz Hoenigschmid, Matthew R. Wordeman
1998 J jnl
A 220-mm
IEEE J. Solid State Circuits
Toshiaki Kirihata, Martin Gall, Kohji Hosokawa, Jean-Marc Dortu, Hing Wong, Peter Pfefferl, Brian L. Ji, Oliver Weinfurtner, John K. DeBrosse, Hartmud Terletzki, Manfred Selz, Wayne Ellis, Matthew R. Wordeman, Oliver Kiehl
1997 C conf
Development of a High Bandwidth Merged Logic/DRAM Multimedia Chip.
ICCD
W. K. Luk, Yasunao Katayama, Wei Hwang, Matthew R. Wordeman, Toshiaki Kirihata, Akashi Satoh, Seiji Munetoh, Hing Wong, B. El-Kareh, P. Xiao, Rajiv V. Joshi
1997 J jnl
Flexible test mode approach for 256-Mb DRAM.
IEEE J. Solid State Circuits
Toshiaki Kirihata, Hing Wong, John K. DeBrosse, Yohji Watanabe, Takahiko Hara, Munehiro Yoshida, Matthew R. Wordeman, Shuso Fujii, Yoshiaki Asao, Bo Krsnik
1996 J jnl
A 286 mm
IEEE J. Solid State Circuits
Yohji Watanabe, Ring Wong, Toshiaki Kirihata, Daisuke Kato, John K. DeBrosse, Takahiko Rara, Munehiro Yoshida, Rideo Mukai, Khandker N. Quader, Takeshi Nagai, Peter Poechmueller, Peter Pfefferl, Matthew R. Wordeman, Shuso Fujii
1996 J jnl
Fault-tolerant designs for 256 Mb DRAM.
IEEE J. Solid State Circuits
Toshiaki Kirihata, Yohji Watanabe, Hing Wong, John K. DeBrosse, Munehiro Yoshida, Daisuke Kato, Shuso Fujii, Matthew R. Wordeman, Peter Poechmueller, Stephen A. Parke, Yoshiaki Asao
1995 J jnl
A half-micron CMOS logic generation.
IBM J. Res. Dev.
Charles W. Koburger III, William F. Clark, James W. Adkisson, Eric Adler, Paul E. Bakeman, Albert S. Bergendahl, Alan B. Botula, W. Chang, Bijan Davari, John H. Givens, Howard H. Hansen, Steven J. Holmes, David V. Horak, Chung Hon Lam, Jerome B. Lasky, Stephen E. Luce, Randy W. Mann, Glen L. Miles, James S. Nakos, Edward J. Nowak, Ghavam G. Shahidi, Yuan Taur, Francis R. White, Matthew R. Wordeman
1992 J jnl
Numerical modeling of advanced semiconductor devices.
IBM J. Res. Dev.
Wai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh