Matteo Meneghini

106 papers C 1Journal 58Unranked 47

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications. IRPS Francesco de Pieri, Manuel Fregolent, Marco Saro, Andrea Carlotto, Mirco Boito, Carlo De Santi, Fabiana Rampazzo, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
2025	—	`conf`	Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate. IRPS Riccardo Fraccaroli, Matteo Dell'Andrea, Manuel Fregolent, Mirco Boito, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Eleonora Canato, Isabella Rossetto, Alessio Pirani, Giansalvo Pizzo, Cristina Miccoli, Alfio Russo, Maria Eloisa Castagna, Ferdinando Iucolano, Matteo Meneghini
2025	J	`jnl`	Long-Term Analysis of Temperature and Current-Dependent Degradation in Green High-Power Light-Emitting Diodes. IEEE Access Alexander Herzog, Matteo Buffolo, Francesco Piva, Simon Benkner, Babak Zandi, Jens Balasus, Paul Myland, Felix Wirth, Willem D. van Driel, Matteo Meneghini, Tran Quoc Khanh
2025	—	`conf`	Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current Stress. IRPS Alberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, G. J. Gomez Garcia, A. Feng, T. Grasser, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2025	—	`conf`	Vth and Ron Instability of GaN Power HEMTs with pGaN Gate Under Negative Gate Bias. IRPS S. L. Longato, Davide Favero, Arno Stockman, Arianna Nardo, Piet Vanmeerbeek, Marnix Tack, Gaudenzio Meneghesso, Enrico Zanoni, Carlo De Santi, Matteo Meneghini
2024	—	`conf`	$\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout. IRPS Davide Favero, Carlo De Santi, Arno Stockman, Arianna Nardo, Piet Vanmeerbeek, Marnix Tack, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2024	—	`conf`	Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements. IRPS Alberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2024	—	`conf`	Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. IRPS Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra
2024	—	`conf`	On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach. IRPS Mirco Boito, Manuel Fregolent, Carlo De Santi, A. Abbisogni, S. Smerzi, Isabella Rossetto, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2024	—	`conf`	Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs. IRPS Alberto Cavaliere, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2024	—	`conf`	Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress. IRPS M. Avramenko, L. De Schepper, J.-F. Cano, F. Geenen, Peter Moens, Alberto Marcuzzi, Carlo De Santi, Matteo Meneghini
2023	—	`conf`	High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. IRPS Davide Favero, Alberto Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2023	J	`jnl`	Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes. IEEE Access Alexander Herzog, Simon Benkner, Babak Zandi, Matteo Buffolo, Willem D. van Driel, Matteo Meneghini, Tran Quoc Khanh
2023	—	`conf`	Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests. IRPS Zhan Gao, Francesca Chiocchetta, Fabiana Rampazzo, Carlo De Santi, Mirko Fornasier, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
2023	—	`conf`	Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques. IRPS Manuel Fregolent, Alberto Marcuzzi, Carlo De Santi, Eldad Bahat-Treidel, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2022	—	`conf`	Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature. IRPS Fabrizio Masin, Carlo De Santi, Arno Stockman, J. Lettens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Matteo Meneghini
2022	—	`conf`	Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. IRPS Zhan Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz
2022	—	`conf`	GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. IRPS Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2022	—	`conf`	Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. IRPS Davide Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2022	—	`conf`	Modeling Hot-Electron Trapping in GaN-based HEMTs. IRPS Nicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2021	—	`conf`	A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level. IRPS Nicola Modolo, Andrea Minetto, Carlo De Santi, Luca Sayadi, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2021	—	`conf`	Charge Trapping in GaN Power Transistors: Challenges and Perspectives. BCICTS Matteo Meneghini, Nicola Modolo, Arianna Nardo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Christian Koller, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni
2021	C	`conf`	Current crowding as a major cause for InGaN LED degradation at extreme high current density. IECON Nicola Trivellin, Matteo Buffolo, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini
2021	J	`jnl`	Full Optical Contactless Thermometry Based on LED Photoluminescence. IEEE Trans. Instrum. Meas. Nicola Trivellin, Matteo Buffolo, Carlo De Santi, Matteo Meneghini, Michele Forzan, Fabrizio Dughiero, Enrico Zanoni, Gaudenzio Meneghesso
2021	—	`conf`	Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. IRPS Francesca Chiocchetta, Claudia Calascione, Carlo De Santi, Chandan Sharma, Fabiana Rampazzo, Xun Zheng, Brian Romanczyk, Matthew Guidry, Haoran Li, Stacia Keller, Umesh K. Mishra, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
2021	—	`conf`	Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. IRPS Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo
2021	—	`conf`	Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. IRPS Elena Fabris, Matteo Borga, Niels Posthuma, Ming Zhao, Brice De Jaeger, Shuzhen You, Stefaan Decoutere, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
2020	—	`conf`	Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. IRPS Fabrizio Masin, Matteo Meneghini, Eleonora Canato, Alessandro Barbato, Carlo De Santi, Arno Stockman, Abhishek Banerjee, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso
2020	—	`conf`	Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. IRPS Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere
2020	—	`conf`	Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling. IRPS Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Fabiana Rampazzo, Daniele Marcon, Veronica Gao Zhan, Francesca Chiocchetta, Andreas Graff, Frank Altmann, Michél Simon-Najasek, David Poppitz
2020	—	`conf`	Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs. IRPS Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi
2019	—	`conf`	Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). IRPS Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury
2019	—	`conf`	Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis. IRPS Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Matteo Borga, Gaudenzio Meneghesso, Enrico Zanoni, Y. Kinoshita, Kenichiro Tanaka, H. Ishida, Tetsuzo Ueda
2019	—	`conf`	Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors. IRPS Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso
2019	—	`conf`	Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. IRPS Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, Alphonse Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso
2019	—	`conf`	Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka
2019	—	`conf`	µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. IRPS Eleonora Canato, Fabrizio Masin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Arno Stockman, Abhishek Banerjee, Peter Moens
2018	J	`jnl`	Current induced degradation study on state of the art DUV LEDs. Microelectron. Reliab. Nicola Trivellin, Desiree Monti, Carlo De Santi, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2018	J	`jnl`	Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits. Microelectron. Reliab. Matteo Buffolo, M. Pietrobon, Carlo De Santi, F. Samparisi, Michael L. Davenport, John E. Bowers, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2018	J	`jnl`	Degradation of GaN-on-GaN vertical diodes submitted to high current stress. Microelectron. Reliab. Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Zongyang Hu, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Xiang Gao, Gaudenzio Meneghesso, Enrico Zanoni
2018	—	`conf`	Degradation of vertical GaN FETs under gate and drain stress. IRPS Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Min Sun, Tomás Palacios
2018	J	`jnl`	Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. Microelectron. Reliab. Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni
2018	J	`jnl`	Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress. Microelectron. Reliab. N. Renso, Matteo Buffolo, Carlo De Santi, Matteo Ronzani, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2018	J	`jnl`	Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes. Microelectron. Reliab. Desiree Monti, Matteo Meneghini, Carlo De Santi, Agata Bojarska, Piotr Perlin, Gaudenzio Meneghesso, Enrico Zanoni
2018	J	`jnl`	Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. Microelectron. Reliab. Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso
2018	J	`jnl`	Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. Microelectron. Reliab. Matteo Borga, Matteo Meneghini, Steve Stoffels, Marleen Van Hove, M. Zhao, X. Li, Stefaan Decoutere, Enrico Zanoni, Gaudenzio Meneghesso
2018	—	`conf`	On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. IRPS Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Benoit Bakeroot
2018	J	`jnl`	On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. Microelectron. Reliab. Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, Marc Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, Daniel Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni
2018	J	`jnl`	Positive and negative threshold voltage instabilities in GaN-based transistors. Microelectron. Reliab. Gaudenzio Meneghesso, Matteo Meneghini, Carlo De Santi, Maria Ruzzarin, Enrico Zanoni
2018	J	`jnl`	Study and Development of a Fluorescence Based Sensor System for Monitoring Oxygen in Wine Production: The WOW Project. Sensors Nicola Trivellin, Diego Barbisan, Denis Badocco, Paolo Pastore, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Giuseppe Belgioioso, Angelo Cenedese
2017	J	`jnl`	Degradation of InGaN-based MQW solar cells under 405 nm laser excitation. Microelectron. Reliab. Carlo De Santi, Matteo Meneghini, Alessandro Caria, E. Dogmus, M. Zegaoui, F. Medjdoub, Enrico Zanoni, Gaudenzio Meneghesso
2017	J	`jnl`	Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. Microelectron. Reliab. Alaleh Tajalli, Matteo Meneghini, Isabella Rossetto, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso
2017	J	`jnl`	Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. Microelectron. Reliab. Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni
2017	J	`jnl`	Long-term degradation of InGaN-based laser diodes: Role of defects. Microelectron. Reliab. Desiree Monti, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Agata Bojarska, Piotr Perlin
2017	—	`conf`	Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. ESSDERC Arno Stockman, Michael J. Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens
2017	J	`jnl`	Understanding the degradation processes of GaN based LEDs submitted to extremely high current density. Microelectron. Reliab. N. Renso, Matteo Meneghini, Matteo Buffolo, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni
2016	J	`jnl`	Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs. Microelectron. Reliab. Agostino Benvegnù, Sylvain Laurent, Matteo Meneghini, Raymond Quéré, Jean-Luc Roux, Enrico Zanoni, Denis Barataud
2016	J	`jnl`	Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes. Microelectron. Reliab. Carlo De Santi, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
2016	J	`jnl`	Degradation of InGaN-based LEDs related to charge diffusion and build-up. Microelectron. Reliab. Marco La Grassa, Matteo Meneghini, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso
2016	J	`jnl`	Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs. Microelectron. Reliab. Matteo Buffolo, Matteo Meneghini, Carlo De Santi, Henry Felber, N. Renso, Gaudenzio Meneghesso, Enrico Zanoni
2016	J	`jnl`	Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale
2016	J	`jnl`	Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. Microelectron. Reliab. Isabella Rossetto, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
2016	J	`jnl`	Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. Microelectron. Reliab. Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni
2015	J	`jnl`	Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects. Microelectron. Reliab. Marco La Grassa, Matteo Meneghini, Carlo De Santi, Marco Mandurrino, Michele Goano, Francesco Bertazzi, Roland Zeisel, Bastian Galler, Gaudenzio Meneghesso, Enrico Zanoni
2015	—	`conf`	Analysis of the mechanisms limiting the reliability of retrofit LED lamps. RTSI Carlo De Santi, Matteo Dal Lago, Matteo Buffolo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
2015	—	`conf`	Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting. RTSI Nicola Trivellin, Matteo Meneghini, Marco Ferretti, Diego Barbisan, Matteo Dal Lago, Gaudenzio Meneghesso, Enrico Zanoni
2015	J	`jnl`	Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. Microelectron. Reliab. Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni
2015	—	`conf`	Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors. IRPS Matteo Meneghini, Riccardo Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, Piet Vanmeerbeek, Abhishek Banerjee, Peter Moens
2015	J	`jnl`	Failure causes and mechanisms of retrofit LED lamps. Microelectron. Reliab. Carlo De Santi, Matteo Dal Lago, Matteo Buffolo, Desiree Monti, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
2015	J	`jnl`	Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. Isabella Rossetto, Matteo Meneghini, Davide Bisi, Alessandro Barbato, Marleen Van Hove, Denis Marcon, Tian-Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
2015	J	`jnl`	Long-term degradation mechanisms of mid-power LEDs for lighting applications. Microelectron. Reliab. Matteo Buffolo, Carlo De Santi, Matteo Meneghini, D. Rigon, Gaudenzio Meneghesso, Enrico Zanoni
2015	—	`conf`	Modeling challenges for high-efficiency visible light-emitting diodes. RTSI Francesco Bertazzi, Stefano Dominici, Marco Mandurrino, Dipika Robidas, Xiangyu Zhou, Marco Vallone, Marco Calciati, Pierluigi Debernardi, Giovanni Verzellesi, Matteo Meneghini, Enrico Bellotti, Giovanni Ghione, Michele Goano
2015	—	`conf`	Stress-induced instabilities of shunt paths in high efficiency MWT solar cells. IRPS Marco Barbato, Matteo Meneghini, Andrea Cester, Alessandro Barbato, Enrico Zanoni, Gaudenzio Meneghesso, Giovanna Mura, Diego Tonini, A. Voltan, Giorgio Cellere
2015	—	`conf`	Trapping induced parasitic effects in GaN-HEMT for power switching applications. ICICDT Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Piet Vanmeerbeek, Peter Moens
2014	—	`conf`	Breakdown investigation in GaN-based MIS-HEMT devices. ESSDERC Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso
2014	—	`conf`	Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. ESSDERC Davide Bisi, Antonio Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni
2014	—	`conf`	Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. ESSDERC Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage
2014	J	`jnl`	ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements. Microelectron. Reliab. Matteo Meneghini, Simone Vaccari, Matteo Dal Lago, Stefano Marconi, Marco Barbato, Nicola Trivellin, Alessio Griffoni, Alberto Alfier, Giovanni Verzellesi, Gaudenzio Meneghesso, Enrico Zanoni
2014	J	`jnl`	ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms. Microelectron. Reliab. Matteo Dal Lago, Matteo Meneghini, Carlo De Santi, Marco Barbato, Nicola Trivellin, Gaudenzio Meneghesso, Enrico Zanoni
2014	J	`jnl`	Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. Microelectron. Reliab. Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni
2014	—	`conf`	High performance high reliability AlN/GaN DHFET. ESSDERC Farid Medjdoub, Etienne Okada, Bertrand Grimbert, Damien Ducatteau, Riccardo Silvestri, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso
2014	J	`jnl`	Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. Microelectron. Reliab. Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini, Marco Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni
2014	J	`jnl`	Proton induced trapping effect on space compatible GaN HEMTs. Microelectron. Reliab. Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni
2014	J	`jnl`	Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage. Microelectron. Reliab. Carlo De Santi, Matteo Meneghini, Michael Marioli, Matteo Buffolo, Nicola Trivellin, T. Weig, K. Holc, K. Köhler, J. Wagner, U. T. Schwarz, Gaudenzio Meneghesso, Enrico Zanoni
2014	J	`jnl`	Traps localization and analysis in GaN HEMTs. Microelectron. Reliab. Alessandro Chini, Fabio Soci, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
2013	J	`jnl`	"Hot-plugging" of LED modules: Electrical characterization and device degradation. Microelectron. Reliab. Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni
2013	J	`jnl`	Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate. Microelectron. Reliab. Isabella Rossetto, Fabiana Rampazzo, Riccardo Silvestri, Alberto Zanandrea, Christian Dua, Sylvain L. Delage, Mourad Oualli, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso
2013	J	`jnl`	ESD characterization of multi-chip RGB LEDs. Microelectron. Reliab. Simone Vaccari, Matteo Meneghini, Alessio Griffoni, Diego Barbisan, Marco Barbato, S. Carraro, Marco La Grassa, Gaudenzio Meneghesso, Enrico Zanoni
2013	—	`conf`	Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. ESSDERC Davide Bisi, Matteo Meneghini, Antonio Stocco, Giulia Cibin, Alessio Pantellini, Antonio Nanni, Claudio Lanzieri, Enrico Zanoni, Gaudenzio Meneghesso
2013	J	`jnl`	Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics. Microelectron. Reliab. Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
2013	J	`jnl`	Thermal and electrical investigation of the reverse bias degradation of silicon solar cells. Microelectron. Reliab. Alessandro Compagnin, Matteo Meneghini, Marco Barbato, Valentina Giliberto, Andrea Cester, Massimo Vanzi, Giovanna Mura, Enrico Zanoni, Gaudenzio Meneghesso
2013	J	`jnl`	Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes. Microelectron. Reliab. Carlo De Santi, Matteo Meneghini, S. Carraro, Simone Vaccari, Nicola Trivellin, Stefania Marconi, Michael Marioli, Gaudenzio Meneghesso, Enrico Zanoni
2012	J	`jnl`	Chip and package-related degradation of high power white LEDs. Microelectron. Reliab. Matteo Meneghini, Matteo Dal Lago, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni
2012	J	`jnl`	IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. Paul Marko, Matteo Meneghini, Sergey Bychikhin, Denis Marcon, Gaudenzio Meneghesso, Enrico Zanoni, Dionyz Pogany
2012	J	`jnl`	Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits. Microelectron. Reliab. Isabella Rossetto, Matteo Meneghini, Tiziana Tomasi, Dai Yufeng, Gaudenzio Meneghesso, Enrico Zanoni
2012	J	`jnl`	Phosphors for LED-based light sources: Thermal properties and reliability issues. Microelectron. Reliab. Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni
2012	J	`jnl`	Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress. Microelectron. Reliab. Matteo Meneghini, Matteo Dal Lago, L. Rodighiero, Nicola Trivellin, Enrico Zanoni, Gaudenzio Meneghesso
2012	J	`jnl`	Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectron. Reliab. Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso
2011	J	`jnl`	Degradation mechanisms of high-power white LEDs activated by current and temperature. Microelectron. Reliab. Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, Gaudenzio Meneghesso, Enrico Zanoni
2011	J	`jnl`	Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency. Microelectron. Reliab. Nicola Trivellin, Matteo Meneghini, Carlo De Santi, Simone Vaccari, Gaudenzio Meneghesso, Enrico Zanoni, Kenji Orita, S. Takigawa, Tsuyoshi Tanaka, Daisuke Ueda
2010	J	`jnl`	Defect-related degradation of Deep-UV-LEDs. Microelectron. Reliab. Matteo Meneghini, Diego Barbisan, Y. Bilenko, Maxim S. Shatalov, J. Yang, R. Gaska, Gaudenzio Meneghesso, Enrico Zanoni
2010	J	`jnl`	Reliability evaluation for Blu-Ray laser diodes. Microelectron. Reliab. Matteo Meneghini, Nicola Trivellin, Kenji Orita, Masaaki Yuri, Tsuyoshi Tanaka, Daisuke Ueda, Enrico Zanoni, Gaudenzio Meneghesso
2009	J	`jnl`	Reliability analysis of InGaN Blu-Ray laser diode. Microelectron. Reliab. Nicola Trivellin, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Kenji Orita, Masaaki Yuri, Tsuyoshi Tanaka, Daisuke Ueda
2007	J	`jnl`	An Analysis of the Compositional Techniques in John Chowning's Comput. Music. J. Matteo Meneghini
2007	J	`jnl`	High temperature electro-optical degradation of InGaN/GaN HBLEDs. Microelectron. Reliab. Matteo Meneghini, Lorenzo Trevisanello, C. Sanna, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni
2006	J	`jnl`	High brightness GaN LEDs degradation during dc and pulsed stress. Microelectron. Reliab. Matteo Meneghini, Simona Podda, A. Morelli, Ruggero Pintus, L. Trevisanello, Gaudenzio Meneghesso, Massimo Vanzi, Enrico Zanoni