Massimo Rudan

24 papers C 1Journal 19Unranked 4
YearRankTypeTitle / Venue / Authors
2016 C conf
An improved MPPT algorithm based on hybrid RCC scheme for single-phase PV systems.
IECON
Manel Hammami, Gabriele Grandi, Massimo Rudan
2016 — conf
Closed-form transition rate in hopping conduction.
ESSDERC
Enrico Piccinini, Massimo Rudan, Rossella Brunetti
2014 — conf
Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides.
ESSDERC
Enrico Piccinini, Massimo Rudan, Fabrizio Buscemi, Rossella Brunetti
2013 — conf
Modeling the dynamic self-heating of PCM.
ESSDERC
Giuliano Marcolini, Fabio Giovanardi, Massimo Rudan, Fabrizio Buscemi, Enrico Piccinini, Rossella Brunetti, Andrea Cappelli
2002 J jnl
Automatic 2-D and 3-D simulation of parasitic structures insmart-power integrated circuits.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Elena Gnani, Vincenzo Giudicissi, Radu Vissarion, Claudio Contiero, Massimo Rudan
2001 J jnl
Calculation of Transport Parameters of SiO
VLSI Design
Elena Gnani, Susanna Reggiani, Renato Colle, Massimo Rudan
2000 J jnl
An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices.
VLSI Design
Susanna Reggiani, Marina Valdinoci, Luigi Colalongo, Massimo Rudan, Giorgio Baccarani
1998 J jnl
An Efficient Solution Scheme for the Spherical-Harmonics Expansion of the Boltzmann Transport Equation Applied to Two-Dimensional Devices.
VLSI Design
Maria Cristina Vecchi, Jan Mohring, Massimo Rudan
1998 J jnl
Monte Carlo Analysis of Anisotropy in the Transport Relaxation Times for the Hydrodynamic Model.
VLSI Design
Rossella Brunetti, Maria Cristina Vecchi, Massimo Rudan
1998 J jnl
Recent Advances in Device Simulation Using Standard Transport Models.
VLSI Design
Giorgio Baccarani, Massimo Rudan, M. Lorenzini, C. Sala
1998 J jnl
Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE.
VLSI Design
Susanna Reggiani, Maria Cristina Vecchi, Massimo Rudan
1998 J jnl
Transient Analysis of Silicon Devices Using the Hydrodynamic Model.
VLSI Design
Luigi Colalongo, Marina Valdinoci, Antonio Gnudi, Massimo Rudan
1997 J jnl
An efficient solution scheme for the spherical-harmonics expansion of the Boltzmann transport equation [MOS transistors].
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Maria Cristina Vecchi, Jan Mohring, Massimo Rudan
1996 J jnl
AC analysis of amorphous silicon devices.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Aurelio Pellegrini, Luigi Colalongo, Marina Valdinoci, Massimo Rudan
1996 — conf
Device simulation for smart integrated systems (DESSIS).
ICECS
Giorgio Baccarani, Massimo Rudan, M. Lorenzini, Wolfgang Fichtner, J. Litsios, A. Schenk, P. Van Staa, L. Kaeser, A. Kampmann, A. Marmiroli, C. Sala, E. Ravanelli
1995 J jnl
On the Structure and Closure-Condition of the Hydrodynamic Model.
VLSI Design
Massimo Rudan, Giorgio Baccarani
1993 J jnl
Numerical simulation of optical devices.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Maria Cristina Vecchi, Massimo Rudan, Giovanni Soncini
1991 J jnl
Boundary fitted coordinated generation for device analysis on composite and complicated geometries.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Zsolt Miklós Kovács-Vajna, Massimo Rudan
1991 J jnl
Hydrodynamic simulation of impact-ionization effects in p-n junctions.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Wolfgang Quade, Massimo Rudan, Eckehard Schöll
1990 J jnl
Investigation of non-local transport phenomena in small semiconductor devices.
Eur. Trans. Telecommun.
Antonio Gnudi, Farouk Odeh, Massimo Rudan
1990 J jnl
Three-dimensional simulation of VLSI structures.
Eur. Trans. Telecommun.
Paolo Ciampolini, Anna Pierantoni, Massimo Rudan, Giorgio Baccarani
1989 J jnl
Adaptive mesh generation preserving the quality of the initial grid.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Paolo Ciampolini, Alessandro Forghieri, Anna Pierantoni, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani
1988 J jnl
A new discretization strategy of the semiconductor equations comprising momentum and energy balance.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Alessandro Forghieri, Roberto Guerrieri, Paolo Ciampolini, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani
1987 J jnl
Sensitivity Analysis for Device Design.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Antonio Gnudi, Paolo Ciampolini, Roberto Guerrieri, Massimo Rudan, Giorgio Baccarani