Masaru Sato

20 papers Journal 14Unranked 6
YearRankTypeTitle / Venue / Authors
2025 J jnl
A 9.3% PAE, 9.2-dBm
IEICE Electron. Express
Yasuhiro Nakasha, Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Shoichi Shiba, Masaru Sato, Naoki Hara, Toshihiro Ohki
2024 — conf
An X-band Spatial Power Combining Using Rectangular Waveguide with Dielectric Lens.
RWS
Takuma Kinoshita, Yuki Shinhama, Masaru Sato, Futoshi Kuroki
2023 J jnl
High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.
IEICE Trans. Electron.
Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato, Toshihiro Ohki
2023 J jnl
Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier.
IEICE Trans. Electron.
Masaru Sato, Yusuke Kumazaki, Naoya Okamoto, Toshihiro Ohki, Naoko Kurahashi, Masato Nishimori, Atsushi Yamada, Junji Kotani, Naoki Hara, Keiji Watanabe
2021 J jnl
Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers.
IEICE Trans. Electron.
Masaru Sato, Yoshitaka Niida, Atsushi Yamada, Junji Kotani, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Norikazu Nakamura
2019 J jnl
Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz.
IEICE Trans. Electron.
Shinpei Yamashita, Michihiko Suhara, Kenichi Kawaguchi, Tsuyoshi Takahashi, Masaru Sato, Naoya Okamoto, Kiyoto Asakawa
2019 — conf
Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves.
ESSDERC
Tsuyoshi Takahashi, Kenichi Kawaguchi, Masaru Sato, Michihiko Suhara, Naoya Okamoto
2017 J jnl
Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers.
IEICE Trans. Electron.
Masaru Sato, Yoshitaka Niida, Toshihide Suzuki, Yasuhiro Nakasha, Yoichi Kawano, Taisuke Iwai, Naoki Hara, Kazukiyo Joshin
2016 J jnl
300-GHz Amplifier in 75-nm InP HEMT Technology.
IEICE Trans. Electron.
Hiroshi Matsumura, Yoichi Kawano, Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Taisuke Iwai, Naoki Hara
2015 J jnl
Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis.
IEICE Trans. Electron.
Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Yoichi Kawano, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Taisuke Iwai, Naoki Hara
2014 J jnl
Millimeter-Wave GaN HEMT for Power Amplifier Applications.
IEICE Trans. Electron.
Kazukiyo Joshin, Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki, Naoya Okamoto, Yoshitaka Niida, Masaru Sato, Satoshi Masuda, Keiji Watanabe
2013 — conf
Submillimeter-wave InP HEMT amplifiers with current-reuse topology.
RWS
Masaru Sato, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara
2012 J jnl
A 24 dB Gain 51-68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci.
Ning Li, Keigo Bunsen, Naoki Takayama, Qinghong Bu, Toshihide Suzuki, Masaru Sato, Yoichi Kawano, Tatsuya Hirose, Kenichi Okada, Akira Matsuzawa
2010 — conf
A 24 dB gain 51-68 GHz CMOS low noise amplifier using asymmetric-layout transistors.
ESSCIRC
Ning Li, Keigo Bunsen, Naoki Takayama, Qinghong Bu, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kenichi Okada, Akira Matsuzawa
2009 — conf
A 77GHz transceiver in 90nm CMOS.
ISSCC
Yoichi Kawano, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin
2009 J jnl
Advanced MMIC Receiver for 94-GHz Band Passive Millimeter-Wave Imager.
IEICE Trans. Electron.
Masaru Sato, Tatsuya Hirose, Koji Mizuno
2008 — conf
60 and 77GHz Power Amplifiers in Standard 90nm CMOS.
ISSCC
Toshihide Suzuki, Yoichi Kawano, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin
2005 J jnl
A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique.
IEEE J. Solid State Circuits
Yusuke Inoue, Masaru Sato, Toshihiro Ohki, Kozo Makiyama, Tsuyoshi Takahashi, Hisao Shigematsu, Tatsuya Hirose
2002 J jnl
A 54-GHz distributed amplifier with 6-V
IEEE J. Solid State Circuits
Hisao Shigematsu, Masaru Sato, Tatsuya Hirose, Yuu Watanabe
2001 J jnl
A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs.
IEEE J. Solid State Circuits
Hisao Shigematsu, Masaru Sato, Toshihide Suzuki, Tsuyoshi Takahashi, Kenji Imanishi, Naoki Hara, Hiroaki Ohnishi, Yuu Watanaba