Martin Kuball

12 papers Journal 9Unranked 3
YearRankTypeTitle / Venue / Authors
2023 — conf
Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs.
IRPS
Akhil S. Kumar, Michael J. Uren, Matthew D. Smith, Martin Kuball, Justin Parke, H. George Henry, Robert S. Howell
2020 — conf
Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer.
BCICTS
Michael J. Uren, Martin Kuball
2019 — conf
Thermal analysis of semiconductor devices and materials - Why should I not trust a thermal simulation ?
BCICTS
Martin Kuball, James W. Pomeroy, Filip Gucmann, Bahar Oner
2018 J jnl
On the origin of dynamic R
Microelectron. Reliab.
Serge Karboyan, Michael J. Uren, Manikant, James W. Pomeroy, Martin Kuball
2017 J jnl
Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs.
Microelectron. Reliab.
Alexander Pooth, Johan Bergsten, Niklas Rorsman, Hassan Hirshy, R. Perks, Paul J. Tasker, Trevor Martin, Richard F. Webster, Dave Cherns, Michael J. Uren, Martin Kuball
2015 J jnl
Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing.
Microelectron. Reliab.
James W. Pomeroy, Michael J. Uren, Benoit Lambert, Martin Kuball
2015 J jnl
Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence.
Microelectron. Reliab.
Tommaso Brazzini, Michael A. Casbon, Huarui Sun, Michael J. Uren, Jonathan Lees, Paul J. Tasker, Helmut Jung, Hervé Blanck, Martin Kuball
2014 J jnl
Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation.
Microelectron. Reliab.
Huarui Sun, Miguel Montes Bajo, Michael J. Uren, Martin Kuball
2014 J jnl
Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors.
Microelectron. Reliab.
Janina Möreke, Chris Hodges, Laura L. E. Mears, Michael J. Uren, Robert M. Richardson, Martin Kuball
2012 J jnl
Improved thermal management for GaN power electronics: Silver diamond composite packages.
Microelectron. Reliab.
Mustapha Faqir, Tim Batten, T. Mrotzek, S. Knippscheer, M. Massiot, M. Buchta, Hervé Blanck, Stéphane Rochette, Olivier Vendier, Martin Kuball
2012 J jnl
The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability.
Microelectron. Reliab.
Milan Tapajna, Nicole Killat, Uttiya Chowdhury, Jose L. Jimenez, Martin Kuball
2011 J jnl
AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes.
Microelectron. Reliab.
Martin Kuball, Milan Tapajna, Richard J. T. Simms, Mustapha Faqir, Umesh K. Mishra