Martin Gall - RankMe

15 papers Journal 4Unranked 11

Year	Rank	Type	Title / Venue / Authors
2024	—	`conf`	A Novel Method for the Determination of Electromigration-Induced Void Nucleation Stresses. IRPS J. Shuster-Passage, S. Abdel Razek, M. Mattoo, Meike Hauschildt, Seungman Choi, Martin Gall, Armen Kteyan, Jun-Ho Choy, Valeriy Sukharev, Matthias Kraatz, J. R. Lloyd
2024	—	`conf`	A Unified Physics-Based Stochastic Model for EM-Induced Resistance Degradation in BEoL Interconnect Segments. IRPS Valeriy Sukharev, Jun-Ho Choy, Armen Kteyan, J. Shuster-Passage, Seungman Choi, Martin Gall
2024	—	`conf`	Thermal Considerations on RF Reliability and Aging in SOI CMOS Based Power Amplifiers. IRPS P. Srinivasan, Oscar H. Gonzalez, Oscar D. Restrepo, J. Lestage, Shafi Syed, W. Taylor, Anirban Bandyopadhyay, Martin Gall, S. Ludvik
2023	—	`conf`	RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications. IRPS P. Srinivasan, J. Lestage, Shafi Syed, X. Hui, Stephen Moss, Oscar D. Restrepo, Oscar H. Gonzalez, Y. Chen, T. McKay, Anirban Bandyopadhyay, Ned Cahoon, Fernando Guarin, Byoung Min, Martin Gall, S. Ludvik
2023	—	`conf`	Self-aligned Fiber Attach on Monolithic Silicon Photonic Chips: Moisture Effect and Hermetic Seal. OFC Zhuo-Jie Wu, Ping-Chuan Wang, Seungman Choi, Patrick Justison, Martin Gall, Jae Kyu Cho, Takako Hirokawa, Yusheng Bian, Thomas Houghton, Vaishnavi Karra, Dan Moy, Karen Nummy, Dave Riggs, Norman Robson, Ian Melville, Ken Giewont
2021	—	`conf`	RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications. IRPS P. Srinivasan, Fernando Guarin, Shafi Syed, Joris Angelo Sundaram Jerome, Wen Liu, Sameer H. Jain, Dimitri Lederer, Stephen Moss, Paul Colestock, Anirban Bandyopadhyay, Ned Cahoon, Byoung Min, Martin Gall
2021	—	`conf`	Strategy to Characterize Electromigration Short Length Effects in Cu/low-k Interconnects. IRPS Zhenjun Zhang, Matthias Kraatz, Meike Hauschildt, Seungman Choi, André Clausner, Ehrenfried Zschech, Martin Gall
2018	—	`conf`	Analysis of 28 nm SRAM cell stability under mechanical load applied by nanoindentation. IRPS André Clausner, Simon Schlipf, Gottfried Kurz, Michael Otto, Jens Paul, Kay-Uwe Giering, Jens Warmuth, André Lange, Roland Jancke, Andreas Aal, Rüdiger Rosenkranz, Martin Gall, Ehrenfried Zschech
2018	—	`conf`	Analysis of electromigration-induced backflow stresses in Cu(Mn) interconnects using high statistical sampling. IRPS Matthias Kraatz, Christoph Sander, André Clausner, Meike Hauschildt, Yvonne Standke, Martin Gall, Ehrenfried Zschech
2018	—	`conf`	Prediction of SRAM Reliability Under Mechanical Stress Induced by Harsh En§ironments. ESSDERC Jens Warmuth, Kay-Uwe Giering, André Lange, André Clausner, Simon Schlipf, Gottfried Kurz, Michael Otto, Jens Paul, Roland Jancke, Andreas Aal, Martin Gall, Ehrenfried Zschech
2014	J	`jnl`	Advanced methods for mechanical and structural characterization of nanoscale materials for 3D IC integration. Microelectron. Reliab. Christoph Sander, Yvonne Standke, Sven Niese, Rüdiger Rosenkranz, André Clausner, Martin Gall, Ehrenfried Zschech
2014	J	`jnl`	Empirical BEOL-TDDB evaluation based on I(t)-trace analysis. Microelectron. Reliab. Oliver Aubel, Armand Beyer, Georg Talut, Martin Gall
2006	J	`jnl`	Impact of stress-induced backflow on full-chip electromigration risk assessment. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. Haldun Haznedar, Martin Gall, Vladimir Zolotov, Pon Sung Ku, Chanhee Oh, Rajendran Panda
2004	—	`conf`	A Methodology for Chip-Level Electromigration Risk Assessment and Product Qualification. ISQED Chanhee Oh, Haldun Haznedar, Martin Gall, Amir Grinshpon, Vladimir Zolotov, Pon Sung Ku, Rajendran Panda
1998	J	`jnl`	A 220-mm IEEE J. Solid State Circuits Toshiaki Kirihata, Martin Gall, Kohji Hosokawa, Jean-Marc Dortu, Hing Wong, Peter Pfefferl, Brian L. Ji, Oliver Weinfurtner, John K. DeBrosse, Hartmud Terletzki, Manfred Selz, Wayne Ellis, Matthew R. Wordeman, Oliver Kiehl