Marta Bagatin

11 papers C 2Journal 6Unranked 3
YearRankTypeTitle / Venue / Authors
2022 J jnl
Radiation Tolerant Multi-Bit Flip-Flop System With Embedded Timing Pre-Error Sensing.
IEEE J. Solid State Circuits
Abhishek Jain, Andrea Mario Veggetti, Dennis Crippa, Antonio Benfante, Simone Gerardin, Marta Bagatin
2021 J jnl
First Tests of a New Facility for Device-Level, Board-Level and System-Level Neutron Irradiation of Microelectronics.
IEEE Trans. Emerg. Top. Comput.
Carlo Cazzaniga, Marta Bagatin, Simone Gerardin, Alessandra Costantino, Christopher D. Frost
2020 C conf
Single Phase Clock Based Radiation Tolerant D Flip-flop Circuit.
IOLTS
Abhishek Jain, Andrea Veggetti, Dennis Crippa, Antonio Benfante, Simone Gerardin, Marta Bagatin
2015 — conf
CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments.
IWASI
N. Demaria, G. Dellacasa, G. Mazza, Angelo Rivetti, Manuel D. Da Rocha Rolo, E. Monteil, L. Pacher, Fabio Ciciriello, Francesco Corsi, Cristoforo Marzocca, G. De Roberts, Flavio Loddo, C. Tamma, Marta Bagatin, D. Bisello, Simone Gerardin, S. Mattiazzo, L. Ding, Piero Giubilato, Alessandro Paccagnella, Francesco De Canio, Luigi Gaioni, Massimo Manghisoni, Valerio Re, Gianluca Traversi, Elisa Riceputi, Lodovico Ratti, Carla Vacchi, Roberto Beccherle, Guido Magazzù, M. Minuti, Fabio Morsani, Fabrizio Palla, Valentino Liberali, Seyedruhollah Shojaii, Alberto Stabile, Gian Mario Bilei, Mauro Menichelli, Elia Conti, Sara Marconi, D. Passen, Pisana Placidi
2015 J jnl
Soft errors in floating gate memory cells: A review.
Microelectron. Reliab.
Marta Bagatin, Simone Gerardin
2014 — conf
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.
ESSDERC
Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage
2012 — conf
High-reliability fault tolerant digital systems in nanometric technologies: Characterization and design methodologies.
DFT
Cristiana Bolchini, Antonio Miele, Chiara Sandionigi, Marco Ottavi, Salvatore Pontarelli, Adelio Salsano, Cecilia Metra, Martin Omaña, Daniele Rossi, Matteo Sonza Reorda, Luca Sterpone, Massimo Violante, Simone Gerardin, Marta Bagatin, Alessandro Paccagnella
2012 J jnl
Temperature dependence of neutron-induced soft errors in SRAMs.
Microelectron. Reliab.
Marta Bagatin, Simone Gerardin, Alessandro Paccagnella, Carla Andreani, Giuseppe Gorini, Christopher D. Frost
2010 J jnl
Destructive events in NAND Flash memories irradiated with heavy ions.
Microelectron. Reliab.
Marta Bagatin, Simone Gerardin, Alessandro Paccagnella, Giorgio Cellere, F. Irom, D. N. Nguyen
2010 J jnl
Impact of total dose on heavy-ion upsets in floating gate arrays.
Microelectron. Reliab.
Simone Gerardin, Marta Bagatin, Alessandro Paccagnella, G. Cellere, Angelo Visconti, Mauro Bonanomi
2007 C conf
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions.
IOLTS
Marta Bagatin, Giorgio Cellere, Simone Gerardin, Alessandro Paccagnella, Angelo Visconti, Silvia Beltrami, M. Maccarrone