Marc Porti

19 papers Journal 15Unranked 4
YearRankTypeTitle / Venue / Authors
2025 J jnl
Reliability Assessment of Optical Physical Unclonable Functions Based on the Spatial Distribution of Catastrophic Failure Sites in MIM Structures.
IEEE Access
Marc Porti, Alvaro Solis, Alex Calatayud, Montserrat Nafría, Enrique Miranda
2025 — conf
Towards a Reliable PUF Using Organic Thin-Film Transistors.
SMACD
F. de Los Santos-Prieto, Deborah Eric, Marc Porti, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández, Montserrat Nafría
2021 J jnl
Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data.
IEEE Access
Ana Ruiz, Carlos Couso, Natalia Seoane, Marc Porti, Antonio J. García-Loureiro, Montserrat Nafría
2018 — conf
Analysis of Body Bias and RTN-Induced Frequency Shift of Low Voltage Ring Oscillators in FDSOI Technology.
PATMOS
Enrique Barajas, Xavier Aragonès, Diego Mateo, Francesc Moll, Antonio Rubio, Javier Martín-Martínez, Rosana Rodríguez, Marc Porti, Montserrat Nafría, Rafael Castro-López, Elisenda Roca, Francisco V. Fernández
2015 — conf
Threading dislocations in III-V semiconductors: Analysis of electrical conduction.
IRPS
Violaine Iglesias, Marc Porti, Carlos Couso, Q. Wu, S. Claramunt, Montserrat Nafría, Enrique Miranda, Neus Domingo, Gennadi Bersuker, Aaron Cordes
2015 — conf
Threshold voltage and on-current Variability related to interface traps spatial distribution.
ESSDERC
V. Velayudhan, Javier Martín-Martínez, Marc Porti, Carlos Couso, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Carlos Marquez, Francisco Gámiz
2013 J jnl
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors.
Microelectron. Reliab.
Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt
2012 J jnl
Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO
Microelectron. Reliab.
Violaine Iglesias, Mario Lanza, Albin Bayerl, Marc Porti, Montserrat Nafría, Xavier Aymerich, Lifeng Liu, Jinfeng Kang, Gennadi Bersuker, Kai Zhang, Ziyong Shen
2010 J jnl
UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements.
Microelectron. Reliab.
Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, E. Whittaker, B. Hamilton
2009 J jnl
Trapped charge and stress induced leakage current (SILC) in tunnel SiO
Microelectron. Reliab.
Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, G. Ghidini, A. Sebastiani
2008 J jnl
Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors.
Microelectron. Reliab.
W. Polspoel, Wilfried Vandervorst, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich
2007 J jnl
Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM.
Microelectron. Reliab.
Mario Lanza, Marc Porti, Montserrat Nafría, Guenther Benstetter, Werner Frammelsberger, Heiko Ranzinger, E. Lodermeier, G. Jaschke
2005 J jnl
Pre- and post-BD electrical conduction of stressed HfO
Microelectron. Reliab.
Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich
2004 J jnl
Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses.
Microelectron. Reliab.
Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich
2003 J jnl
Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM.
Microelectron. Reliab.
Marc Porti, Montserrat Nafría, Xavier Aymerich
2003 J jnl
Pre-breakdown noise in electrically stressed thin SiO
Microelectron. Reliab.
Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich
2001 J jnl
Characterising the surface roughness of AFM grown SiO
Microelectron. Reliab.
Daniel Hill, X. Blasco, Marc Porti, Montserrat Nafría, Xavier Aymerich
2001 J jnl
Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO
Microelectron. Reliab.
Rosana Rodríguez, Marc Porti, Montserrat Nafría, Xavier Aymerich
2001 J jnl
Local current fluctuations before and after breakdown of thin SiO
Microelectron. Reliab.
Marc Porti, X. Blasco, Montserrat Nafría, Xavier Aymerich, Alexander Olbrich, Bernd Ebersberger