Marc M. Heyns

11 papers Journal 6Unranked 5
YearRankTypeTitle / Venue / Authors
2024 J jnl
Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics.
CoRR
Md Nur K. Alam, Sergiu Clima, Ben Kaczer, Philippe Roussel, Brecht Truijen, Lars-Åke Ragnarsson, N. Horiguchi, Marc M. Heyns, Jan Van Houdt
2022 — conf
Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements.
VLSI Technology and Circuits
Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt
2019 J jnl
Reconfigurable nanoscale spin wave majority gate with frequency-division multiplexing.
CoRR
Giacomo Talmelli, Thibaut Devolder, Nick Träger, Johannes Förster, Sebastian Wintz, Markus Weigand, Hermann Stoll, Marc M. Heyns, Gisela Schütz, Iuliana P. Radu, Joachim Gräfe, Florin Ciubotaru, Christoph Adelmann
2017 — conf
Material selection and device design guidelines for two-dimensional materials based TFETs.
ESSDERC
Tarun Agarwal, Bart Soree, Iuliana P. Radu, Praveen Raghavan, Gianluca Fiori, Marc M. Heyns, Wim Dehaene
2016 — conf
Effect of material parameters on two-dimensional materials based TFETs: An energy-delay perspective.
ESSCIRC
Tarun Agarwal, Iuliana P. Radu, Praveen Raghavan, Gianluca Fiori, Aaron Thean, Marc M. Heyns, Wim Dehaene
2015 — conf
The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices.
IRPS
Abhitosh Vais, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer
2012 — conf
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications.
ICICDT
Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken
2007 J jnl
Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling.
Microelectron. Reliab.
M. Houssa, Marc Aoulaiche, Stefan De Gendt, Guido Groeseneken, Marc M. Heyns
2005 J jnl
Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance.
Microelectron. Reliab.
G. S. Lujan, Wim Magnus, L.-Å. Ragnarsson, Stefan Kubicek, Stefan De Gendt, Marc M. Heyns, Kristin De Meyer
2001 J jnl
In situ crystallisation in ZrO
Microelectron. Reliab.
Chao Zhao, Gert Roebben, Hugo Bender, Edward Young, S. Haukka, Michel Houssa, Mohamed Naili, Stefan De Gendt, Marc M. Heyns, Omer Van der Biest
1999 J jnl
Cost-effective cleaning and high-quality thin gate oxides.
IBM J. Res. Dev.
Marc M. Heyns, Twan Bearda, Ingrid Cornelissen, Stefan De Gendt, Robin Degraeve, Guido Groeseneken, Conny Kenens, D. Martin Knotter, Lee M. Loewenstein, Paul W. Mertens, Sofie Mertens, Marc Meuris, Tanya Nigam, Marc Schaekers, Ivo Teerlinck, Wilfried Vandervorst, Rita Vos, Klaus Wolke