Marc Aoulaiche

11 papers Journal 3Unranked 8
YearRankTypeTitle / Venue / Authors
2018 — conf
Overview of 3D NAND Technologies and Outlook Invited Paper.
NVMTS
Srinath Venkatesan, Marc Aoulaiche
2015 — conf
Assessment of SiGe quantum well transistors for DRAM peripheral applications.
ICICDT
Romain Ritzenthaler, Tom Schram, Geert Eneman, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son
2015 — conf
I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration.
ICICDT
Romain Ritzenthaler, Tom Schram, M. J. Cho, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Christian Caillat, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son
2015 — conf
Off-state stress degradation mechanism on advanced p-MOSFETs.
ICICDT
Moonju Cho, Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri Linten
2015 — conf
Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs.
ICICDT
Alessio Spessot, Romain Ritzenthaler, Tom Schram, Marc Aoulaiche, Moonju Cho, Maria Toledano-Luque, Naoto Horiguchi, Pierre Fazan
2014 — conf
Impact of Off State Stress on advanced high-K metal gate NMOSFETs.
ESSDERC
Alessio Spessot, Marc Aoulaiche, Moonju Cho, Jacopo Franco, Tom Schram, Romain Ritzenthaler, Ben Kaczer
2014 J jnl
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation.
Microelectron. Reliab.
Maria Glória Caño de Andrade, João Antonio Martino, Marc Aoulaiche, Nadine Collaert, Eddy Simoen, Cor Claeys
2013 — conf
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.
ESSDERC
Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, Hyuokju Na, Y. Son, K. B. Noh
2012 — conf
On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs.
ESSDERC
Eddy Simoen, Marc Aoulaiche, Anabela Veloso, M. Jurczak, Cor Claeys, L. Mendes Almeida, Maria Glória Caño de Andrade, A. Luque Rodriguez, J. A. Jimenez Tejada, Christian Caillat, Pierre Fazan
2007 J jnl
NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase.
Microelectron. Reliab.
A. Shickova, Ben Kaczer, Anabela Veloso, Marc Aoulaiche, M. Houssa, Herman E. Maes, Guido Groeseneken, J. A. Kittl
2007 J jnl
Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling.
Microelectron. Reliab.
M. Houssa, Marc Aoulaiche, Stefan De Gendt, Guido Groeseneken, Marc M. Heyns