Manuel Aldegunde

14 papers Journal 8Unranked 6

Year	Rank	Type	Title / Venue / Authors
2017	—	`conf`	Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations. ESSDERC Muhammad A. Elmessary, Daniel Nagy, Manuel Aldegunde, Antonio J. García-Loureiro, Karol Kalna
2016	J	`jnl`	Development of an exchange-correlation functional with uncertainty quantification capabilities for density functional theory. J. Comput. Phys. Manuel Aldegunde, James R. Kermode, Nicholas Zabaras
2016	J	`jnl`	Quantifying uncertainties in first-principles alloy thermodynamics using cluster expansions. J. Comput. Phys. Manuel Aldegunde, Nicholas Zabaras, Jesper Kristensen
2015	J	`jnl`	Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes. Comput. Phys. Commun. Manuel Aldegunde, Karol Kalna
2015	J	`jnl`	Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold. J. Low Power Electron. Guillermo Indalecio Fernández, Natalia Seoane, Manuel Aldegunde, Karol Kalna, Antonio J. García-Loureiro
2014	—	`conf`	Impact of discrete dopants on an ultra-scaled FinFET using quantum transport simulations. ESSDERC R. Valín, Antonio Martinez, Manuel Aldegunde, John R. Barker
2013	J	`jnl`	Optimisation and parallelisation of a 2D MOSFET multi-subband ensemble Monte Carlo simulator. Int. J. High Perform. Comput. Appl. Raúl Valín Ferreiro, Carlos Sampedro, Natalia Seoane, Manuel Aldegunde, Antonio J. García-Loureiro, Andres Godoy, Francisco Gámiz
2013	J	`jnl`	Simulation of the spin polarization and the charge transport in Zener tunnel junctions based on ferromagnetic GaAs and ZnO. Comput. Phys. Commun. Enrique Comesaña, Manuel Aldegunde, Antonio J. García-Loureiro
2012	—	`conf`	Static multipole method applied to boundary conditions for semiconductor device simulations. HPCS Guillermo Indalecio Fernández, Antonio J. García-Loureiro, Manuel Aldegunde
2011	J	`jnl`	Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. Antonio J. García-Loureiro, Natalia Seoane, Manuel Aldegunde, Raúl Valín Ferreiro, Asen Asenov, Antonio Martinez, Karol Kalna
2010	J	`jnl`	Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes. Comput. Phys. Commun. Manuel Aldegunde, Natalia Seoane, Antonio J. García-Loureiro, Karol Kalna
2009	—	`conf`	The MOSFET Virtual Organisation: Grid Computing for Simulation in Nanoelectronics. eScience Raúl Valín Ferreiro, Natalia Seoane, Manuel Aldegunde, Antonio J. García-Loureiro
2007	—	`conf`	Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs. LSSC Manuel Aldegunde, Antonio J. García-Loureiro, Karol Kalna
2005	—	`conf`	Optimization of an Octree-based 3-D Parallel Meshing Algorithm for the Simulation of Small-Feature Semiconductor Devices. PARCO Juan J. Pombo, Manuel Aldegunde, Antonio J. García-Loureiro