M. Rafik - RankMe

12 papers Journal 4Unranked 8

Year	Rank	Type	Title / Venue / Authors
2022	—	`conf`	Frequency dependant gate oxide TDDB model. IRPS M. Arabi, X. Federspiel, Florian Cacho, M. Rafik, S. Blonkowski, Xavier Garros, G. Guibaudo
2019	—	`conf`	Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. IRPS A. P. Nguyen, Xavier Garros, M. Rafik, Florian Cacho, David Roy, Xavier Federspiel, Fred Gaillard
2019	—	`conf`	Process Optimization for HCI Improvement in I/O Analog Devices. IRPS Cheikh Diouf, N. Guitard, M. Rafik, J. J. Martinez, X. Federspiel, Alain Bravaix, D. Muller, David Roy
2018	—	`conf`	A new method for quickly evaluating reversible and permanent components of the BTI degradation. IRPS Xavier Garros, Alexandre Subirats, Gilles Reimbold, Fred Gaillard, Cheikh Diouf, X. Federspiel, Vincent Huard, M. Rafik
2018	—	`conf`	AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment. IRPS M. Rafik, A. P. Nguyen, Xavier Garros, M. Arabi, X. Federspiel, Cheikh Diouf
2018	—	`conf`	Modeling self-heating effects in advanced CMOS nodes. IRPS M. Arabi, A. Cros, X. Federspiel, Cheikh Ndiaye, Vincent Huard, M. Rafik
2018	J	`jnl`	New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. Microelectron. Reliab. D. Nouguier, X. Federspiel, Gérard Ghibaudo, M. Rafik, David Roy
2015	—	`conf`	Performance and reliability of strained SOI transistors for advanced planar FDSOI technology. IRPS Guillaume Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu
2015	—	`conf`	Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. IRPS A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo
2011	J	`jnl`	Challenges and opportunity in performance, variability and reliability in sub-45 nm CMOS technologies. Microelectron. Reliab. Franck Arnaud, L. Pinzelli, C. Gallon, M. Rafik, P. Mora, Frédéric Boeuf
2010	J	`jnl`	Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation. Microelectron. Reliab. L. Gerrer, M. Rafik, G. Ribes, Gérard Ghibaudo, E. Vincent
2009	J	`jnl`	Process dependence of BTI reliability in advanced HK MG stacks. Microelectron. Reliab. Xavier Garros, Mikaël Cassé, M. Rafik, Claire Fenouillet-Béranger, Gilles Reimbold, François Martin, Claudia Wiemer, F. Boulanger