Leming Jiao

13 papers C 1Unranked 12
YearRankTypeTitle / Venue / Authors
2024 C conf
Transposable Memory Based on the Ferroelectric Field-Effect Transistor.
ISCAS
Jianze Wang, Wei Zhang, Zhen Wu, Yimin Wang, Leming Jiao, Xiaolin Wang, Xiao Gong, Xuanyao Fong
2023 — conf
First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3D Multi-Fin Floating Gate: In-situ ALD-deposited MFM, LCH of 50 nm, > 2×10
VLSI Technology and Circuits
Xiaolin Wang, Zijie Zheng, Qiwen Kong, Leming Jiao, Kaizhen Han, Chen Sun, Zuopu Zhou, Long Liu, Yuye Kang, Gan Liu, Dong Zhang, Xiao Gong
2023 — conf
First Demonstration of BEOL-Compatible Write-Enhanced Ferroelectric-Modulated Diode (FMD): New Possibility for Oxide Semiconductor Memory Devices.
VLSI Technology and Circuits
Leming Jiao, Kaizhen Han, Zuopu Zhou, Zijie Zheng, Xiaolin Wang, Qiwen Kong, Yuye Kang, Jishen Zhang, Long Liu, Xiao Gong
2023 — conf
First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory.
ICICDT
Zijie Zheng, Jiawei Xie, Yiyuan Sun, Ying Xu, Xiaolin Wang, Leming Jiao, Zuopu Zhou, Qiwen Kong, Yue Chen, Xiao Gong
2023 — conf
First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs.
VLSI Technology and Circuits
Zijie Zheng, Leming Jiao, Zuopu Zhou, Yuxuan Wang, Long Liu, Kaizhen Han, Chen Sun, Qiwen Kong, Dong Zhang, Xiaolin Wang, Kai Ni, Xiao Gong
2023 — conf
First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack.
VLSI Technology and Circuits
Zuopu Zhou, Leming Jiao, Zijie Zheng, Xiaolin Wang, Dong Zhang, Kai Ni, Xiao Gong
2023 — conf
Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding.
VLSI Technology and Circuits
Dong Zhang, Jixuan Wu, Qiwen Kong, Zuopu Zhou, Long Liu, Kaizhen Han, Chen Sun, Xiaolin Wang, Gan Liu, Leming Jiao, Zijie Zheng, Yuye Kang, Jiezhi Chen, Xiao Gong
2023 — conf
Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F
VLSI Technology and Circuits
Zuopu Zhou, Leming Jiao, Qiwen Kong, Zijie Zheng, Kaizhen Han, Yue Chen, Chen Sun, Bich-Yen Nguyen, Xiao Gong
2022 — conf
BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application.
ICICDT
Leming Jiao, Zuopu Zhou, Zijie Zheng, Yuye Kang, Chen Sun, Qiwen Kong, Xiaolin Wang, Dong Zhang, Gan Liu, Long Liu, Xiao Gong
2022 — conf
Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection.
VLSI Technology and Circuits
Zijie Zheng, Chen Sun, Leming Jiao, Dong Zhang, Zuopu Zhou, Xiaolin Wang, Gan Liu, Qiwen Kong, Yue Chen, Kai Ni, Xiao Gong
2022 — conf
Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention.
VLSI Technology and Circuits
Zuopu Zhou, Leming Jiao, Jiuren Zhou, Zijie Zheng, Yue Chen, Kaizhen Han, Yuye Kang, Xiao Gong
2022 — conf
First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit.
VLSI Technology and Circuits
Yue Chen, Gong Zhang, Jiuren Zhou, Zijie Zheng, Leming Jiao, Haibo Wang, Zuopu Zhou, Annie Kumar, Jishen Zhang, Yuxuan Wang, Qiwen Kong, Chen Sun, Xiao Gong
2022 — conf
First Si-Waveguide-Integrated InGaAs/InAlAs Avalanche Photodiodes on SOI Platform.
VLSI Technology and Circuits
Jishen Zhang, Haiwen Xu, Kian Hua Tan, Satrio Wicaksono, Qiwen Kong, Gong Zhang, Yue Chen, Chen Sun, Haibo Wang, Chao Wang, Zijie Zheng, Leming Jiao, Zuopu Zhou, Charles Ci Wen Lim, Soon-Fatt Yoon, Xiao Gong