Kwan-Weon Kim

12 papers C 1Journal 2Unranked 9
YearRankTypeTitle / Venue / Authors
2015 J jnl
A 1.2 V 8 Gb 8-Channel 128 GB/s High-Bandwidth Memory (HBM) Stacked DRAM With Effective I/O Test Circuits.
IEEE J. Solid State Circuits
Dong-Uk Lee, Kyung Whan Kim, Kwan-Weon Kim, Kang Seol Lee, Sang Jin Byeon, Jae-Hwan Kim, Jin-Hee Cho, Jaejin Lee, Jun Hyun Chun
2014 — conf
25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV.
ISSCC
Dong-Uk Lee, Kyung Whan Kim, Kwan-Weon Kim, Hongjung Kim, Ju Young Kim, Young Jun Park, Jae Hwan Kim, Dae Suk Kim, Heat Bit Park, Jin Wook Shin, Jang Hwan Cho, Ki Hun Kwon, Min Jeong Kim, Jaejin Lee, Kunwoo Park, Byong-Tae Chung, Sung-Joo Hong
2014 — conf
An exact measurement and repair circuit of TSV connections for 128GB/s high-bandwidth memory(HBM) stacked DRAM.
VLSIC
Dong-Uk Lee, Kyung Whan Kim, Kwan-Weon Kim, Kang Seol Lee, Sang Jin Byeon, Jin-Hee Cho, Han Ho Jin, Sang Kyun Nam, Jaejin Lee, Jun Hyun Chun, Sung-Joo Hong
2012 J jnl
A 1.6 V 1.4 Gbp/s/pin Consumer DRAM With Self-Dynamic Voltage Scaling Technique in 44 nm CMOS Technology.
IEEE J. Solid State Circuits
Hyun-Woo Lee, Ki-Han Kim, Young-Kyoung Choi, Ju-Hwan Sohn, Nak-Kyu Park, Kwan-Weon Kim, Chulwoo Kim, Young-Jung Choi, Byong-Tae Chung
2011 — conf
A 1.6V 1.4Gb/s/pin consumer DRAM with self-dynamic voltage-scaling technique in 44nm CMOS technology.
ISSCC
Hyun-Woo Lee, Ki-Han Kim, Young-Kyoung Choi, Ju-Hwan Shon, Nak-Kyu Park, Kwan-Weon Kim, Chulwoo Kim, Young-Jung Choi, Byong-Tae Chung
2010 C conf
A 7.7mW/1.0ns/1.35V delay locked loop with racing mode and OA-DCC for DRAM interface.
ISCAS
Hyun-Woo Lee, Yong-Hoon Kim, Won-Joo Yun, Eun Young Park, Kang Youl Lee, Jaeil Kim, Kwang Hyun Kim, Jongho Jung, Kyung Whan Kim, Nam Gyu Rye, Kwan-Weon Kim, Jun Hyun Chun, Chulwoo Kim, Young-Jung Choi, Byong-Tae Chung, Joong Sik Kih
2009 — conf
A 1.6V 3.3Gb/s GDDR3 DRAM with dual-mode phase- and delay-locked loop using power-noise management with unregulated power supply in 54nm CMOS.
ISSCC
Hyun-Woo Lee, Won-Joo Yun, Young-Kyoung Choi, Hyang-Hwa Choi, Jong-Jin Lee, Ki-Han Kim, Shin-Deok Kang, Ji-Yeon Yang, Jae-Suck Kang, Hyeng-Ouk Lee, Dong-Uk Lee, Sujeong Sim, Young-Ju Kim, Won-Jun Choi, Keun-Soo Song, Sang-Hoon Shin, Hyung-Wook Moon, Seung-Wook Kwack, Jung-Woo Lee, Nak-Kyu Park, Kwan-Weon Kim, Young-Jung Choi, Jin-Hong Ahn, Byong-Tae Chung
2009 — conf
Small-area high-accuracy ODT/OCD by calibration of global on-chip for 512M GDDR5 application.
CICC
Jabeom Koo, Gil-Su Kim, Junyoung Song, Kwan-Weon Kim, Young-Jung Choi, Chulwoo Kim
2008 — conf
A 0.1-to-1.5GHz 4.2mW All-Digital DLL with Dual Duty-Cycle Correction Circuit and Update Gear Circuit for DRAM in 66nm CMOS Technology.
ISSCC
Won-Joo Yun, Hyun-Woo Lee, Dongsuk Shin, Shin-Deok Kang, Ji-Yeon Yang, Hyeng-Ouk Lee, Dong-Uk Lee, Sujeong Sim, Young-Ju Kim, Won-Jun Choi, Keun-Soo Song, Sang-Hoon Shin, Hyang-Hwa Choi, Hyung-Wook Moon, Seung-Wook Kwack, Jung-Woo Lee, Young-Kyoung Choi, Nak-Kyu Park, Kwan-Weon Kim, Young-Jung Choi, Jin-Hong Ahn, Ye Seok Yang
2008 — conf
Multi-Slew-Rate Output Driver and Optimized Impedance-Calibration Circuit for 66nm 3.0Gb/s/pin DRAM Interface.
ISSCC
Dong-Uk Lee, Shin-Deok Kang, Nak-Kyu Park, Hyun-Woo Lee, Young-Kyoung Choi, Jung-Woo Lee, Seung-Wook Kwack, Hyeong-Ouk Lee, Won-Joo Yun, Sang-Hoon Shin, Kwan-Weon Kim, Young-Jung Choi, Ye Seok Yang
2007 — conf
A 7ps-Jitter 0.053mm2 Fast-Lock ADDLL with Wide-Range and High-Resolution All-Digital DCC.
ISSCC
Dongsuk Shin, Janghoon Song, Hyunsoo Chae, Kwan-Weon Kim, Young-Jung Choi, Chulwoo Kim
2006 — conf
A 2.5Gb/s/pin 256Mb GDDR3 SDRAM with Series Pipelined CAS Latency Control and Dual-Loop Digital DLL.
ISSCC
Dong-Uk Lee, Hyun-Woo Lee, Ki Chang Kwean, Young-Kyoung Choi, Hyong Uk Moon, Seung-Wook Kwack, Shin-Deok Kang, Kwan-Weon Kim, Yong Ju Kim, Young-Jung Choi, Patrick B. Moran, Jin-Hong Ahn, Joong Sik Kih