Kuniyuki Kakushima

37 papers Journal 31Unranked 6
YearRankTypeTitle / Venue / Authors
2019 — conf
Switching of 3300V Scaled IGBT by 5V Gate Drive.
ASICON
Toshiro Hiramoto, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shinichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Kazuo Itou, Toshihiro Takakura, Munetoshi Fukui, Shinichi Suzuki, Ken Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa
2018 J jnl
Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors.
Microelectron. Reliab.
Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima
2018 J jnl
Improvement of SiO
Microelectron. Reliab.
Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima
2018 — conf
New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment.
VLSI Circuits
Kuniyuki Kakushima, Takuya Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, Takuya Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, Ken Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Y. Numasawa, Atsushi Ogura, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai
2018 — conf
Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately.
ESSDERC
Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Masahiro Watanabe, Naoyuki Shigvo, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Lwai
2017 — conf
3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat).
ASICON
Kazuo Tsutsui, Kuniyuki Kakushima, Takuya Hoshii, A. Nakajima, Shinichi Nishizawa, Hitoshi Wakabayashi, Iriya Muneta, K. Sato, Tomoko Matsudai, Wataru Saito, Takuya Saraya, K. Itou, M. Fukui, S. Suzuki, Masaharu Kobayashi, T. Takakura, Toshiro Hiramoto, Atsushi Ogura, Y. Numasawa, Ichiro Omura, Hiromichi Ohashi, Hiroshi Iwai
2017 J jnl
Durability evaluation of hexagonal WO
Microelectron. Reliab.
Akito Sasaki, Hideyuki Oozu, Miho Nakamura, Katsuaki Aoki, Yoshinori Kataoka, Syuichi Saito, Kumpei Kobayashi, Wei Li, Kuniyuki Kakushima, Kazuo Tsutsui, Hiroshi Iwai
2016 J jnl
La
Microelectron. Reliab.
J. Chen, Takamasa Kawanago, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, D. Nohata, Hiroshi Nohira, Kuniyuki Kakushima
2016 J jnl
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current.
Microelectron. Reliab.
J. Chen, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima
2016 J jnl
Resistive switching properties of a thin SiO
Microelectron. Reliab.
M. S. Hadi, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima
2015 J jnl
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity.
Microelectron. Reliab.
Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
2015 J jnl
Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes.
Microelectron. Reliab.
Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
2014 J jnl
A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability.
Microelectron. Reliab.
Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai
2014 J jnl
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement.
Microelectron. Reliab.
Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
2014 J jnl
Determination of energy and spatial distribution of oxide border traps in In
Microelectron. Reliab.
Chunmeng Dou, Dennis Lin, Abhitosh Vais, Tsvetan Ivanov, Han-Ping Chen, Koen Martens, Kuniyuki Kakushima, Hiroshi Iwai, Yuan Taur, Aaron Thean, Guido Groeseneken
2014 J jnl
On the current conduction mechanisms of CeO
Microelectron. Reliab.
Xuan Feng, Hei Wong, B. L. Yang, Shurong Dong, Hiroshi Iwai, Kuniyuki Kakushima
2013 — conf
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.
ESSDERC
Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
2012 — conf
(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture.
ESSDERC
Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai
2012 J jnl
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown.
Microelectron. Reliab.
Enrique Miranda, Takamasa Kawanago, Kuniyuki Kakushima, Jordi Suñé, Hiroshi Iwai
2012 J jnl
Improving the electrical characteristics of MOS transistors with CeO
Microelectron. Reliab.
B. L. Yang, Hei Wong, Kuniyuki Kakushima, Hiroshi Iwai
2012 J jnl
Oxide and interface trap densities estimation in ultrathin W/La
Microelectron. Reliab.
M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai
2012 J jnl
Resistive switching behavior of a CeO
Microelectron. Reliab.
Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai
2011 J jnl
Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs.
Microelectron. Reliab.
Kiichi Tachi, Sylvain Barraud, Kuniyuki Kakushima, Hiroshi Iwai, Sorin Cristoloveanu, Thomas Ernst
2011 J jnl
Effects of La
Microelectron. Reliab.
D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai
2011 J jnl
Si nanowire FET and its modeling.
Sci. China Inf. Sci.
Hiroshi Iwai, Kenji Natori, Kenji Shiraishi, Jun-ichi Iwata, Atsushi Oshiyama, Keisaku Yamada, Kenji Ohmori, Kuniyuki Kakushima, Parhat Ahmet
2011 J jnl
Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors.
Microelectron. Reliab.
Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kenji Ohmori, Kenji Natori, Keisaku Yamada, Hiroshi Iwai
2010 J jnl
Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La
Microelectron. Reliab.
Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
2010 J jnl
Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness.
Microelectron. Reliab.
Yusuke Kobayashi, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao, Kazuo Tsutsui, Hiroshi Iwai
2010 J jnl
Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs.
IEICE Trans. Electron.
Hiroshi Shimomura, Kuniyuki Kakushima, Hiroshi Iwai
2010 J jnl
Equivalent Noise Temperature Representation for Scaled MOSFETs.
IEICE Trans. Electron.
Hiroshi Shimomura, Kuniyuki Kakushima, Hiroshi Iwai
2010 J jnl
SrO capping effect for La
Microelectron. Reliab.
Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
2009 J jnl
Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors.
Microelectron. Reliab.
Sik-Lam Siu, Hei Wong, Wing-Shan Tam, Kuniyuki Kakushima, Hiroshi Iwai
2008 J jnl
Electrical characteristics of MOSFETs with La
Microelectron. Reliab.
Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
2007 J jnl
Carrier separation and Vth measurements of W-La
IEICE Electron. Express
Joel Molina Reyes, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
2007 J jnl
Parasitic Effects in Multi-Gate MOSFETs.
IEICE Trans. Electron.
Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, Hiroshi Iwai
2006 J jnl
Effective mobility and interface-state density of La
IEICE Electron. Express
Jin-Aun Ng, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai
2005 J jnl
Silicon periodic nano-structures obtained by laser exposure of nano-wires.
Microelectron. J.
Kuniyuki Kakushima, Tarik Bourouina, T. Sarnet, G. Kerrien, D. Débarre, J. Boulmer, Hiroyuki Fujita