Kuang Sheng

13 papers C 1Journal 10Unranked 2
YearRankTypeTitle / Venue / Authors
2026 J jnl
Over 3 GW/cm2 low leakage vertical β-Ga2O3 Schottky rectifier featuring self-aligned multi-zone junction termination extension.
Sci. China Inf. Sci.
Jiangbin Wan, Hengyu Wang, Tiancheng Tao, Haoyuan Cheng, Ce Wang, Chi Zhang, Kuang Sheng
2024 J jnl
Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kV SiC MOSFETs Across Multiple Vendors and Generations.
IEEE Access
Shahid Makhdoom, Na Ren, Ce Wang, Chaobiao Lin, Yiding Wu, Kuang Sheng
2023 J jnl
An efficient mixed attention module.
IET Comput. Vis.
Kuang Sheng, Pinghua Chen
2019 C conf
A Resonant DC-DC Converter with Modular Rectifier for High Voltage Gain and Wide Output Voltage Range Applications.
IECON
Weiwen Ye, Wentao Cui, Shuai Shao, Junming Zhang, Kuang Sheng
2019 J jnl
Circulating Current and ZVS-on of a Dual Active Bridge DC-DC Converter: A Review.
IEEE Access
Shuai Shao, Hui Chen, Xinke Wu, Junming Zhang, Kuang Sheng
2016 J jnl
Charge trapping related channel modulation instability in P-GaN gate HEMTs.
Microelectron. Reliab.
Xueyang Li, Gang Xie, Cen Tang, Kuang Sheng
2015 J jnl
Study of the leakage current suppression for hybrid-Schottky/ohmic drain AlGaN/GaN HEMT.
Microelectron. Reliab.
Cen Tang, Gang Xie, Kuang Sheng
2013 — conf
Electronic system hardware exploration in an inverted classroom.
MWSCAS
James Barker, Julia Cline, Kuang Sheng, Steven Bibyk
2013 J jnl
High temperature physical modeling and verification of a novel 4H-SiC lateral JFET structure.
Microelectron. Reliab.
Xueqian Zhong, Li Zhang, Gang Xie, Qing Guo, Tao Wang, Kuang Sheng
2012 — conf
Parameters evaluation for SiC-JFET modeling considering non-uniformity by fabrication.
ISIE
Chaofeng Cai, Yilong Qu, Qing Guo, Wang Tao, Kuang Sheng
2008 J jnl
Current Status and Future Prospects of SiC Power JFETs and ICs.
IEICE Trans. Electron.
Jian H. Zhao, Kuang Sheng, Yongxi Zhang, Ming Su
2001 J jnl
A composite soft-switching inverter configuration with unipolar pulsewidth modulation control.
IEEE Trans. Ind. Electron.
Xiangning He, Kuang Sheng, Barry W. Williams, Zhaoming Qian, Stephen J. Finney
2000 J jnl
Thermal stability of IGBT high-frequency operation.
IEEE Trans. Ind. Electron.
Kuang Sheng, Stephen J. Finney, Barry W. Williams