Kin Leong Pey

34 papers C 2Journal 19Unranked 13
YearRankTypeTitle / Venue / Authors
2023 — conf
A New Methodology to Precisely Induce Wake-Up for Reliability Assessment of Ferroelectric Devices.
IRPS
Tiang Teck Tan, Yu-Yun Wang, Joel Tan, Tian-Li Wu, Nagarajan Raghavan, Kin Leong Pey
2023 — conf
Backhopping-based STT-MRAM Poisson Spiking Neuron for Neuromorphic Computation.
IRPS
J. Tan, J. H. Lim, Jae Hyun Kwon, Vinayak Bharat Naik, Nagarajan Raghavan, Kin Leong Pey
2020 C conf
A transformative engineering and architecture education.
FIE
Kin Leong Pey, Lucienne Blessing, Bige Tunçer
2020 — conf
Correlation of Dielectric Breakdown and Nanoscale Adhesion in Silicon Dioxide Thin Films.
IRPS
Alok Ranjan, Sean J. O'Shea, Michel Bosman, Joel Molina Reyes, Nagarajan Raghavan, Kin Leong Pey
2020 — conf
Origins and Signatures of Tail Bit Failures in Ultrathin MgO Based STT-MRAM.
IRPS
Jia Hao Lim, Nagarajan Raghavan, Jae Hyun Kwon, Tae Young Lee, Robin Chao, Nyuk Leong Chung, Kazutaka Yamane, Naganivetha Thiyagarajah, Vinayak Bharat Naik, Kin Leong Pey
2020 — conf
Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device.
IRPS
Laiqiang Luo, Kalya Shubhakar, Sen Mei, Nagarajan Raghavan, Fan Zhang, Danny Shum, Kin Leong Pey
2019 — conf
Correct Extrapolation Model for TDDB of STT-MRAM MgO Magnetic Tunnel Junctions.
IRPS
Jia Hao Lim, Nagarajan Raghavan, Vinayak Bharat Naik, Jae Hyun Kwon, Kazutaka Yamane, H. Yang, K. H. Lee, Kin Leong Pey
2019 — conf
Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride - The Knowns and the Unknowns.
IRPS
Kin Leong Pey, Alok Ranjan, Nagarajan Raghavan, Kalya Shubhakar, Sean J. O'Shea
2019 — conf
Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms.
IRPS
Fernando Leonel Aguirre, Andrea Padovani, Alok Ranjan, Nagarajan Raghavan, Nahuel Vega, Nahuel Muller, Sebastián Matías Pazos, Mario Debray, Joel Molina Reyes, Kin Leong Pey, Felix Palumbo
2018 — conf
Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction.
IRPS
Jia Hao Lim, Nagarajan Raghavan, Sen Mei, Vinayak Bharat Naik, Jae Hyun Kwon, S. M. Noh, B. Liu, E. H. Toh, Nyuk Leong Chung, Robin Chao, K. H. Lee, Kin Leong Pey
2018 — conf
Effectiveness of Physical Robot Versus Robot Simulator in Teaching Introductory Programming.
TALE
Oka Kurniawan, Norman Tiong Seng Lee, Subhajit Datta, Nachamma Sockalingam, Kin Leong Pey
2018 — conf
Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics.
IRPS
Alok Ranjan, Nagarajan Raghavan, Sean J. O'Shea, Sen Mei, Michel Bosman, Kalya Shubhakar, Kin Leong Pey
2018 J jnl
Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress.
Microelectron. Reliab.
Xuan Feng, Nagarajan Raghavan, Sen Mei, Shurong Dong, Kin Leong Pey, Hei Wong
2018 J jnl
Understanding spatial resolution of laser voltage imaging.
Microelectron. Reliab.
Venkat Krishnan Ravikumar, Gabriel Lim, Jiann Min Chin, Kin Leong Pey, Joel K. W. Yang
2017 C conf
Preliminary study of integrated physics and mathematics bridging course.
EDUCON
U-Xuan Tan, Yajuan Zhu, Chee Huei Lee, Tin-Lam Toh, Guan Kheng Sze, Shirley Tay, Darren Wong, Kin Leong Pey
2016 J jnl
Analysis of quantum conductance, read disturb and switching statistics in HfO
Microelectron. Reliab.
Alok Ranjan, Nagarajan Raghavan, Joel Molina Reyes, Sean J. O'Shea, Kalya Shubhakar, Kin Leong Pey
2016 J jnl
Compliance current dominates evolution of NiSi
Microelectron. Reliab.
Sen Mei, Michel Bosman, Nagarajan Raghavan, Xing Wu, Kin Leong Pey
2016 J jnl
Conductive filament formation at grain boundary locations in polycrystalline HfO
Microelectron. Reliab.
Kalya Shubhakar, Sen Mei, Michel Bosman, Nagarajan Raghavan, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey
2016 J jnl
Effects of thermal annealing on the charge localization characteristics of HfO
Microelectron. Reliab.
Xuan Feng, Shurong Dong, Hei Wong, Danqun Yu, Kin Leong Pey, Kalya Shubhakar, W. S. Lau
2016 J jnl
The variation of the leakage current characteristics of W/Ta
Microelectron. Reliab.
Danqun Yu, W. S. Lau, Hei Wong, Xuan Feng, Shurong Dong, Kin Leong Pey
2015 J jnl
An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO
Microelectron. Reliab.
Kalya Shubhakar, Michel Bosman, O. A. Neucheva, Y. C. Loke, Nagarajan Raghavan, R. Thamankar, Alok Ranjan, Sean J. O'Shea, Kin Leong Pey
2015 — conf
Monte Carlo model of reset stochastics and failure rate estimation of read disturb mechanism in HfOx RRAM.
IRPS
Nagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey
2015 J jnl
Probabilistic insight to possibility of new metal filament nucleation during repeated cycling of conducting bridge memory.
Microelectron. Reliab.
Nagarajan Raghavan, Michel Bosman, Kin Leong Pey
2015 — conf
Spectroscopy of SILC trap locations and spatial correlation study of percolation path in the high-κ and interfacial layer.
IRPS
Nagarajan Raghavan, Michel Bosman, Kin Leong Pey
2015 J jnl
Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach.
Microelectron. Reliab.
Nagarajan Raghavan, Daniel D. Frey, Michel Bosman, Kin Leong Pey
2014 J jnl
Assessment of read disturb immunity in conducting bridge memory devices - A thermodynamic perspective.
Microelectron. Reliab.
Nagarajan Raghavan, Michel Bosman, Kin Leong Pey
2014 J jnl
High-κ dielectric breakdown in nanoscale logic devices - Scientific insight and technology impact.
Microelectron. Reliab.
Nagarajan Raghavan, Kin Leong Pey, Kalya Shubhakar
2014 J jnl
Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO
Microelectron. Reliab.
Kalya Shubhakar, Nagarajan Raghavan, Sunil Singh Kushvaha, Michel Bosman, Zhongrui Wang, Sean J. O'Shea, Kin Leong Pey
2014 J jnl
Prognostic methodology for remaining useful life estimation of retention loss in nanoscale resistive switching memory.
Microelectron. Reliab.
Nagarajan Raghavan, Daniel D. Frey, Kin Leong Pey
2014 J jnl
Robust Electromigration reliability through engineering optimization.
Microelectron. Reliab.
Wee Loon Ng, Kheng Chok Tee, Junfeng Liu, Yong Chiang Ee, Oliver Aubel, Chuan Seng Tan, Kin Leong Pey
2014 J jnl
Variability model for forming process in oxygen vacancy modulated high-κ based resistive switching memory devices.
Microelectron. Reliab.
Nagarajan Raghavan, Michel Bosman, Daniel D. Frey, Kin Leong Pey
2005 J jnl
Structure of the oxide damage under progressive breakdown.
Microelectron. Reliab.
Felix Palumbo, G. Condorelli, Salvatore Lombardo, Kin Leong Pey, C. H. Tung, L. J. Tang
2003 J jnl
Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM.
Microelectron. Reliab.
Kin Leong Pey, C. H. Tung, M. K. Radhakrishnan, L. J. Tang, Y. Sun, X. D. Wang, W. H. Lin
2002 J jnl
Physical analysis of hard and soft breakdown failures in ultrathin gate oxides.
Microelectron. Reliab.
M. K. Radhakrishnan, Kin Leong Pey, C. H. Tung, W. H. Lin