Kevin W. Kobayashi

19 papers Journal 15Unranked 4

Year	Rank	Type	Title / Venue / Authors
2023	J	`jnl`	A Ka-Band InP HBT MMIC Power Amplifier With 19.8:1 IP3/P IEEE J. Solid State Circuits Kevin W. Kobayashi, Paul Partyka, Tim Howle, Tony Sellas, Leonard Hayden
2022	—	`conf`	High Linearity Ka-band InP HBT MMIC Amplifier with 19.8:1 IP3/Pdc LFOM at 48 GHz. BCICTS Kevin W. Kobayashi, Paul Partyka, Tim Howle, Tony Sellas, Leonard Hayden
2020	—	`conf`	18-44GHz K/Ka-band Robust-35.5dBm Reconfigurable 90nm GaN HEMT LNA. BCICTS Kevin W. Kobayashi, Vipan Kumar, Charles Campbell, Shuoqi Chen, Yu Cao
2020	J	`jnl`	Baseband to 140-GHz SiGe HBT and 100-GHz InP DHBT Broadband Triple-Stacked Distributed Amplifiers With Active Bias Terminations. IEEE J. Solid State Circuits Kevin W. Kobayashi, Ying Z. McCleary
2020	—	`conf`	Robust-5W Reconfigurable S/X-band GaN LNA using a 90nm T-gate GaN HEMT Technology. BCICTS Kevin W. Kobayashi, Vipan Kumar, Charles Campbell, Shuoqi Chen, Yu Cao, Jose Jimenez
2019	—	`conf`	140GHz SiGe HBT and 100GHz InP DHBT Broadband Triple-Stacked Distributed Amplifiers with Active Bias Terminations. BCICTS Kevin W. Kobayashi, Ying Z. McCleary
2016	J	`jnl`	A Novel 100 MHz-45 GHz Input-Termination-Less Distributed Amplifier Design With Low-Frequency Low-Noise and High Linearity Implemented With A 6 Inch 0.15~ μm GaN-SiC Wafer Process Technology. IEEE J. Solid State Circuits Kevin W. Kobayashi, Dan Denninghoff, Dain Miller
2012	J	`jnl`	An 8-W 250-MHz to 3-GHz Decade-Bandwidth Low-Noise GaN MMIC Feedback Amplifier With > +51-dBm OIP3. IEEE J. Solid State Circuits Kevin W. Kobayashi
2009	J	`jnl`	A Cool, Sub-0.2 dB Noise Figure GaN HEMT Power Amplifier With 2-Watt Output Power. IEEE J. Solid State Circuits Kevin W. Kobayashi, YaoChung Chen, Ioulia Smorchkova, Benjamin Heying, Wen-Ben Luo, William Sutton, Mike Wojtowicz, Aaron K. Oki
2007	J	`jnl`	Linearized Darlington Cascode Amplifier Employing GaAs PHEMT and GaN HEMT Technologies. IEEE J. Solid State Circuits Kevin W. Kobayashi
1999	J	`jnl`	A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth. IEEE J. Solid State Circuits Kevin W. Kobayashi, Aaron K. Oki, Liem T. Tran, John C. Cowles, Augusto Gutierrez-Aitken, Frank Yamada, Thomas R. Block, Dwight C. Streit
1999	J	`jnl`	A 44-GHz-high IP3 InP HBT MMIC amplifier for low DC power millimeter-wave receiver applications. IEEE J. Solid State Circuits Kevin W. Kobayashi, John C. Cowles, Liem T. Tran, Augusto Gutierrez-Aitken, Matt Nishimoto, Jeffrey H. Elliott, Thomas R. Block, Aaron K. Oki, Dwight C. Streit
1998	J	`jnl`	A novel self-oscillating HEMT-HBT cascode VCO-mixer using an active tunable inductor. IEEE J. Solid State Circuits Kevin W. Kobayashi, Aaron K. Oki, Donald K. Umemoto, Tomas Ray Block, Dwight C. Streit
1996	J	`jnl`	A 5-10 GHz octave-band AlGaAs/GaAs HBT-Schottky diode down-converter MMIC. IEEE J. Solid State Circuits Kevin W. Kobayashi, Robert Kasody, Aaron K. Oki, Dwight C. Streit
1996	J	`jnl`	A monolithically integrated HEMT-HBT low noise high linearity variable gain amplifier. IEEE J. Solid State Circuits Kevin W. Kobayashi, Donald K. Umemoto, Thomas R. Block, Aaron K. Oki, Dwight C. Streit
1994	J	`jnl`	GaAs HBT 0.75-5 GHz multifunctional microwave-analog variable gain amplifier. IEEE J. Solid State Circuits Kevin W. Kobayashi, Kwan T. Ip, Aaron K. Oki, Donald K. Umemoto, Sahimwn Claxton, Matt Pope, Jerry Wiltz
1994	J	`jnl`	InAlAs/InGaAs HBT X-band double-balanced upconverter. IEEE J. Solid State Circuits Kevin W. Kobayashi, Liem T. Tran, Stacey Bui, Aaron K. Oki, Dwight C. Streit, Mark Rosen
1993	J	`jnl`	Integrated complementary HBT microwave push-pull and Darlington amplifiers with p-n-p active loads. IEEE J. Solid State Circuits Kevin W. Kobayashi, Donald K. Umemoto, James R. Velebir Jr., Aaron K. Oki, Dwight C. Streit
1992	J	`jnl`	A 6-GHz integrated phase-locked loop using AlGaAs/GaAs heterojunction bipolar transistors. IEEE J. Solid State Circuits Aaron W. Buchwald, Kenneth W. Martin, Aaron K. Oki, Kevin W. Kobayashi