Kenji Shiraishi

12 papers C 1Journal 11
YearRankTypeTitle / Venue / Authors
2018 J jnl
Atomistic study of SiN based ReRAM with high program/erase cycle endurance.
IEICE Electron. Express
Keita Yamaguchi, Hiroki Shirakawa, Kenji Shiraishi
2018 J jnl
Market based embedded Real Time Operation for Distributed Resources and Flexibility.
CoRR
Bertrand Travacca, Greg Rybka, Kenji Shiraishi
2017 J jnl
Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories.
IEICE Trans. Electron.
Hiroki Shirakawa, Keita Yamaguchi, Masaaki Araidai, Katsumasa Kamiya, Kenji Shiraishi
2015 J jnl
Theoretical and Experimental Approaches to Select Resistive Switching Material.
IEICE Trans. Electron.
Takeki Ninomiya, Zhiqiang Wei, Shinichi Yoneda, Kenji Shiraishi
2014 C conf
Ab initio modeling of resistive switching mechanism in binary metal oxides.
ISCAS
Blanka Magyari-Köpe, Liang Zhao, Yoshio Nishi, Katsumasa Kamiya, Moon Young Yang, Kenji Shiraishi
2013 J jnl
Examination of short calibration problem of Transmission Line Pulse.
IEICE Electron. Express
Teruo Suzuki, Kenji Shiraishi
2011 J jnl
An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory.
IEICE Trans. Electron.
Akira Otake, Keita Yamaguchi, Katsumasa Kamiya, Yasuteru Shigeta, Kenji Shiraishi
2011 J jnl
Si nanowire FET and its modeling.
Sci. China Inf. Sci.
Hiroshi Iwai, Kenji Natori, Kenji Shiraishi, Jun-ichi Iwata, Atsushi Oshiyama, Keisaku Yamada, Kenji Ohmori, Kuniyuki Kakushima, Parhat Ahmet
2011 J jnl
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor.
IEICE Trans. Electron.
Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta, Tetsuo Endoh
2010 J jnl
A massively-parallel electronic-structure calculations based on real-space density functional theory.
J. Comput. Phys.
Jun-ichi Iwata, Daisuke Takahashi, Atsushi Oshiyama, Taisuke Boku, Kenji Shiraishi, Susumu Okada, Kazuhiro Yabana
2010 J jnl
Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot.
IEICE Trans. Electron.
Masakazu Muraguchi, Yukihiro Takada, Shintaro Nomura, Tetsuo Endoh, Kenji Shiraishi
2007 J jnl
Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films.
IEICE Trans. Electron.
Tetsuo Endoh, Kazuyuki Hirose, Kenji Shiraishi