Ken Nakahara

16 papers A 1Journal 11Unranked 4
YearRankTypeTitle / Venue / Authors
2025 A conf
Learning Gentle Grasping Using Vision, Sound, and Touch.
IROS
Ken Nakahara, Roberto Calandra
2025 J jnl
Learning Gentle Grasping Using Vision, Sound, and Touch.
CoRR
Ken Nakahara, Roberto Calandra
2025 J jnl
Optimizing the Number of Parallel SiC MOSFET Chips in a Wireless Power Transfer Inverter With Pulse Width Control.
IEEE Trans. Ind. Electron.
Tatsuya Yanagi, Ken Nakahara, Sakahisa Nagai, Osamu Shimizu, Hiroshi Fujimoto
2025 J jnl
Robot Control Stack: A Lean Ecosystem for Robot Learning at Scale.
CoRR
Tobias Jülg, Pierre Krack, Seongjin Bien, Yannik Blei, Khaled Gamal, Ken Nakahara, Johannes Hechtl, Roberto Calandra, Wolfram Burgard, Florian Walter
2024 J jnl
Effect of the Conduction Resistance of SiC MOSFET on the Harmonics of Inverter Voltage in Wireless Power-Transfer Systems for Electric Vehicles.
IEEE Access
Tatsuya Yanagi, Ken Nakahara, Hayato Sumiya, Sakahisa Nagai, Osamu Shimizu, Hiroshi Fujimoto
2024 — conf
Parasitic Transistor with Hole Injection Current Modeling of AlGaN/GaN Ridge HEMTs.
ICECET
Hitoshi Aoki, Naotaka Kuroda, Atsushi Yamaguchi, Ken Nakahara
2022 J jnl
An Evaluation of a New Type of High Efficiency Hybrid Gate Drive Circuit for SiC-MOSFET Suitable for Automotive Power Electronics System Applications.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci.
Masayoshi Yamamoto, Shinya Shirai, Senanayake Thilak, Jun Imaoka, Ryosuke Ishido, Yuta Okawauchi, Ken Nakahara
2021 — conf
Geometry Independent Hole Injection Current Model of GaN Ridge HEMTs.
ISIE
Hitoshi Aoki, Hiroyuki Sakairi, Naotaka Kuroda, Atsushi Yamaguchi, Ken Nakahara
2020 J jnl
Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si.
IEICE Trans. Electron.
Taketoshi Tanaka, Norikazu Ito, Shinya Takado, Masaaki Kuzuhara, Ken Nakahara
2020 — conf
Influence of Device Parameter Variability on Current Sharing of Parallel-Connected SiC MOSFETs.
ATS
Yohei Nakamura, Naotaka Kuroda, Atsushi Yamaguchi, Ken Nakahara, Michihiro Shintani, Takashi Sato
2020 J jnl
Magnetic Near-Field Strength Prediction of a Power Module by Measurement-Independent Modeling of Its Structure.
IEEE Access
Junichi Kashiwagi, Hiroyuki Sakairi, Hirotaka Otake, Yusuke Nakakohara, Ken Nakahara
2019 J jnl
Hysteretic Control Embedded Boost Converter Operating at 25-MHz Switching.
IEEE Trans. Circuits Syst. II Express Briefs
Junichi Kashiwagi, Atsushi Yamaguchi, Yohei Moriyama, Ken Nakahara
2019 — conf
Switching Time Characterization and Modeling of AlN/GaN MIS-HEMTs.
ICIT
Hitoshi Aoki, Hiroyuki Sakairi, Naotaka Kuroda, Kentaro Chikamatsu, Ken Nakahara
2018 J jnl
A Fanless Operating Trans-Linked Interleaved 5 kW Inverter Using SiC MOSFETs to Achieve 99% Power Conversion Efficiency.
IEEE Trans. Ind. Electron.
Tatsuya Miyazaki, Hirotaka Otake, Yusuke Nakakohara, Mamoru Tsuruya, Ken Nakahara
2016 J jnl
Three-Phase LLC Series Resonant DC/DC Converter Using SiC MOSFETs to Realize High-Voltage and High-Frequency Operation.
IEEE Trans. Ind. Electron.
Yusuke Nakakohara, Hirotaka Otake, Tristan M. Evans, Tomohiko Yoshida, Mamoru Tsuruya, Ken Nakahara
2015 J jnl
High-speed gate drive circuit for SiC MOSFET by GaN HEMT.
IEICE Electron. Express
Kohei Nagaoka, Kentaro Chikamatsu, Atsushi Yamaguchi, Ken Nakahara, Takashi Hikihara