Karol Kalna - RankMe

17 papers Journal 13Unranked 4

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Impact of Various Si and III-V nano-MOSFET Architectures on Performance Characteristics. ICECET A. Islam, Brahim Benbakhti, W. Abushiba, Karol Kalna
2020	J	`jnl`	Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes. IEEE Access Daniel Nagy, Gabriel Espineira, Guillermo Indalecio Fernández, Antonio J. García-Loureiro, Karol Kalna, Natalia Seoane
2019	J	`jnl`	Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs. IEEE Access Daniel Nagy, Guillermo Indalecio Fernández, Antonio J. García-Loureiro, Gabriel Espineira, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane
2018	J	`jnl`	Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications. Microelectron. J. Olujide Adenekan, Paul Holland, Karol Kalna
2018	J	`jnl`	Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. IEEE Access Steven J. Duffy, Brahim Benbakhti, Karol Kalna, Mohammed Boucherta, Wei Dong Zhang, Nour-Eddine Bourzgui, Ali Soltani
2017	J	`jnl`	Operational frequency degradation induced trapping in scaled GaN HEMTs. Microelectron. Reliab. Brendan Ubochi, Soroush Faramehr, Khaled Ahmeda, Petar Igic, Karol Kalna
2017	J	`jnl`	Role of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures. IEEE Access Khaled Ahmeda, Brendan Ubochi, Brahim Benbakhti, Steven J. Duffy, Ali Soltani, Wei Dong Zhang, Karol Kalna
2017	—	`conf`	Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations. ESSDERC Muhammad A. Elmessary, Daniel Nagy, Manuel Aldegunde, Antonio J. García-Loureiro, Karol Kalna
2015	J	`jnl`	Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes. Comput. Phys. Commun. Manuel Aldegunde, Karol Kalna
2015	J	`jnl`	Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold. J. Low Power Electron. Guillermo Indalecio Fernández, Natalia Seoane, Manuel Aldegunde, Karol Kalna, Antonio J. García-Loureiro
2011	J	`jnl`	Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. Antonio J. García-Loureiro, Natalia Seoane, Manuel Aldegunde, Raúl Valín Ferreiro, Asen Asenov, Antonio Martinez, Karol Kalna
2010	J	`jnl`	Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures. Microelectron. Reliab. Brahim Benbakhti, J. S. Ayubi-Moak, Karol Kalna, D. Lin, Geert Hellings, Guy Brammertz, Kristin De Meyer, Iain Thayne, Asen Asenov
2010	J	`jnl`	Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes. Comput. Phys. Commun. Manuel Aldegunde, Natalia Seoane, Antonio J. García-Loureiro, Karol Kalna
2007	—	`conf`	Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs. LSSC Manuel Aldegunde, Antonio J. García-Loureiro, Karol Kalna
2005	—	`conf`	A High-Performance Parallel Device Simulator for High Electron Mobility Transistors. PARCO Natalia Seoane, Antonio J. García-Loureiro, Karol Kalna, Asen Asenov
2003	J	`jnl`	Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study. Math. Comput. Simul. Karol Kalna, Asen Asenov
2001	J	`jnl`	Scaling of pHEMTs to Decanano Dimensions. VLSI Design Karol Kalna, Asen Asenov, K. Elgaid, Iain Thayne