Karol Kalna

17 papers Journal 13Unranked 4
YearRankTypeTitle / Venue / Authors
2025 — conf
Impact of Various Si and III-V nano-MOSFET Architectures on Performance Characteristics.
ICECET
A. Islam, Brahim Benbakhti, W. Abushiba, Karol Kalna
2020 J jnl
Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes.
IEEE Access
Daniel Nagy, Gabriel Espineira, Guillermo Indalecio Fernández, Antonio J. García-Loureiro, Karol Kalna, Natalia Seoane
2019 J jnl
Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs.
IEEE Access
Daniel Nagy, Guillermo Indalecio Fernández, Antonio J. García-Loureiro, Gabriel Espineira, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane
2018 J jnl
Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications.
Microelectron. J.
Olujide Adenekan, Paul Holland, Karol Kalna
2018 J jnl
Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs.
IEEE Access
Steven J. Duffy, Brahim Benbakhti, Karol Kalna, Mohammed Boucherta, Wei Dong Zhang, Nour-Eddine Bourzgui, Ali Soltani
2017 J jnl
Operational frequency degradation induced trapping in scaled GaN HEMTs.
Microelectron. Reliab.
Brendan Ubochi, Soroush Faramehr, Khaled Ahmeda, Petar Igic, Karol Kalna
2017 J jnl
Role of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures.
IEEE Access
Khaled Ahmeda, Brendan Ubochi, Brahim Benbakhti, Steven J. Duffy, Ali Soltani, Wei Dong Zhang, Karol Kalna
2017 — conf
Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations.
ESSDERC
Muhammad A. Elmessary, Daniel Nagy, Manuel Aldegunde, Antonio J. García-Loureiro, Karol Kalna
2015 J jnl
Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes.
Comput. Phys. Commun.
Manuel Aldegunde, Karol Kalna
2015 J jnl
Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold.
J. Low Power Electron.
Guillermo Indalecio Fernández, Natalia Seoane, Manuel Aldegunde, Karol Kalna, Antonio J. García-Loureiro
2011 J jnl
Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Antonio J. García-Loureiro, Natalia Seoane, Manuel Aldegunde, Raúl Valín Ferreiro, Asen Asenov, Antonio Martinez, Karol Kalna
2010 J jnl
Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures.
Microelectron. Reliab.
Brahim Benbakhti, J. S. Ayubi-Moak, Karol Kalna, D. Lin, Geert Hellings, Guy Brammertz, Kristin De Meyer, Iain Thayne, Asen Asenov
2010 J jnl
Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes.
Comput. Phys. Commun.
Manuel Aldegunde, Natalia Seoane, Antonio J. García-Loureiro, Karol Kalna
2007 — conf
Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs.
LSSC
Manuel Aldegunde, Antonio J. García-Loureiro, Karol Kalna
2005 — conf
A High-Performance Parallel Device Simulator for High Electron Mobility Transistors.
PARCO
Natalia Seoane, Antonio J. García-Loureiro, Karol Kalna, Asen Asenov
2003 J jnl
Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study.
Math. Comput. Simul.
Karol Kalna, Asen Asenov
2001 J jnl
Scaling of pHEMTs to Decanano Dimensions.
VLSI Design
Karol Kalna, Asen Asenov, K. Elgaid, Iain Thayne