Kai Esmark - RankMe

14 papers Journal 14

Year	Rank	Type	Title / Venue / Authors
2009	J	`jnl`	CDM tests on interface test chips for the verification of ESD protection concepts. Microelectron. Reliab. Tilo Brodbeck, Kai Esmark, Wolfgang Stadler
2009	J	`jnl`	Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technology. Microelectron. Reliab. David Alvarez, Kiran V. Chatty, Christian Russ, Michel J. Abou-Khalil, Junjun Li, Robert Gauthier, Kai Esmark, Ralph Halbach, Christopher Seguin
2009	J	`jnl`	Reliability aspects of gate oxide under ESD pulse stress. Microelectron. Reliab. Adrien Ille, Wolfgang Stadler, Thomas Pompl, Harald Gossner, Tilo Brodbeck, Kai Esmark, Philipp Riess, David Alvarez, Kiran V. Chatty, Robert Gauthier, Alain Bravaix
2009	J	`jnl`	Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology. Microelectron. Reliab. Michael Heer, Krzysztof Domanski, Kai Esmark, Ulrich Glaser, Dionyz Pogany, Erich Gornik, Wolfgang Stadler
2007	J	`jnl`	SCR operation mode of diode strings for ESD protection. Microelectron. Reliab. Ulrich Glaser, Kai Esmark, Martin Streibl, Christian Russ, Krzysztof Domanski, Mauro Ciappa, Wolfgang Fichtner
2005	J	`jnl`	High abstraction level permutational ESD concept analysis. Microelectron. Reliab. Martin Streibl, Franz Zängl, Kai Esmark, Robert Schwencker, Wolfgang Stadler, Harald Gossner, S. Drüen, Doris Schmitt-Landsiedel
2005	J	`jnl`	Test circuits for fast and reliable assessment of CDM robustness of I/O stages. Microelectron. Reliab. Wolfgang Stadler, Kai Esmark, K. Reynders, M. Zubeidat, Michael Graf, Wolfgang Wilkening, J. Willemen, Ning Qu, S. Mettler, M. Etherton
2005	J	`jnl`	Transient latch-up: experimental analysis and device simulation. Microelectron. Reliab. S. Bargstädt-Franke, Wolfgang Stadler, Kai Esmark, Martin Streibl, Krzysztof Domanski, Horst A. Gieser, Heinrich Wolf, Waclaw Bala
2003	J	`jnl`	Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies. Microelectron. Reliab. Martin Streibl, Kai Esmark, A. Sieck, Wolfgang Stadler, M. Wendel, J. Szatkowski, Harald Gossner
2002	J	`jnl`	Case study of a technology transfer causing ESD problems. Microelectron. Reliab. Franz Zängl, Harald Gossner, Kai Esmark, R. Owen, G. Zimmermann
2002	J	`jnl`	Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development. Microelectron. Reliab. Wolfgang Stadler, Kai Esmark, Harald Gossner, Martin Streibl, M. Wendel, Wolfgang Fichtner, Dionyz Pogany, Martin Litzenberger, Erich Gornik
2001	J	`jnl`	Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase. Microelectron. Reliab. Kai Esmark, Wolfgang Stadler, M. Wendel, Harald Gossner, X. Guggenmos, Wolfgang Fichtner
2001	J	`jnl`	Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices. Microelectron. Reliab. Martin Litzenberger, R. Pichler, Sergey Bychikhin, Dionyz Pogany, Erich Gornik, Kai Esmark, Harald Gossner
2001	J	`jnl`	Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology. Microelectron. Reliab. Harald Gossner, T. Müller-Lynch, Kai Esmark, Matthias Stecher