Jörg Appenzeller

12 papers A* 1Journal 4Unranked 7
YearRankTypeTitle / Venue / Authors
2023 — conf
A mobility study of monolayer MoS2 on low-κ/high-κ dielectrics.
DRC
Zheng Sun, Cindy Chen, Joshua A. Robinson, Zhihong Chen, Jörg Appenzeller
2023 J jnl
Experimental demonstration of an integrated on-chip p-bit core utilizing stochastic Magnetic Tunnel Junctions and 2D-MoS
CoRR
John Daniel, Zheng Sun, Xuejian Zhang, Yuanqiu Tan, Neil Dilley, Zhihong Chen, Jörg Appenzeller
2020 J jnl
From Charge to Spin and Spin to Charge: Stochastic Magnets for Probabilistic Switching.
Proc. IEEE
Kerem Yunus Çamsari, Punyashloka Debashis, Vaibhav Ostwal, Ahmed Zeeshan Pervaiz, Tingting Shen, Zhihong Chen, Supriyo Datta, Jörg Appenzeller
2019 — conf
About the interplay between contact and channel resistance in MoS2 and its impact on mobility extraction.
DRC
Ruiping Zhou, Jörg Appenzeller
2018 — conf
High Performance Complementary Black Phosphorus FETs and Inverter Circuits Operating at Record-Low VDD down to 0.2V.
DRC
Peng Wu, Jörg Appenzeller
2018 — conf
Thickness Tunable Transport Properties in MoTe
DRC
Yuqi Zhu, Feng Zhang, Jörg Appenzeller
2018 — conf
Three-Dimensional Integration of Multi-Channel MoS2 Devices for High Drive Current FETs.
DRC
Ruiping Zhou, Jörg Appenzeller
2009 — conf
Nanowire electronics.
ESSCIRC
Jörg Appenzeller
2008 J jnl
Carbon Nanotubes for High-Performance Electronics - Progress and Prospect.
Proc. IEEE
Jörg Appenzeller
2007 — conf
Gate Work Function Engineering for Nanotube-Based Circuits.
ISSCC
Zhihong Chen, Jörg Appenzeller, Paul M. Solomon, Yu-Ming Lin, Phaedon Avouris
2003 J jnl
Carbon nanotube electronics.
Proc. IEEE
Phaedon Avouris, Jörg Appenzeller, Richard Martel, Shalom J. Wind
2002 A* conf
Carbon nanotube field-effect transistors and logic circuits.
DAC
Richard Martel, V. Derycke, Jörg Appenzeller, Shalom J. Wind, Phaedon Avouris