Jérôme Mitard

20 papers C 1Journal 5Unranked 14
YearRankTypeTitle / Venue / Authors
2024 — conf
Monolithic Complementary Field Effect Transistors (CFET) Demonstrated using Middle Dielectric Isolation and Stacked Contacts.
VLSI Technology and Circuits
Steven Demuynck, Victor Vega-Gonzalez, C. Toledo de Carvalho Cavalcante, L. Petersen Barbosa Lima, K. Stiers, C. Sheng, A. Vandooren, M. Hosseini, X. Zhou, Hans Mertens, Thomas Chiarella, Jürgen Bömmels, Roger Loo, E. Rosseel, Clement Porret, Y. Shimura, A. Akula, G. Mannaert, S. Choudhury, V. Brissonneau, E. Dupuy, T. Sarkar, Nathali Franchina-Vergel, A. Peter, Nicolas Jourdan, J. P. Soulie, Kevin Vandersmissen, F. Sebaai, P. Puttarame Gowda, K. Lai, A. Mingardi, S. Sumar Sarkar, K. D'Have, B. T. Chan, A. Sepulveda Marquez, R. Langer, I. Gyo Koo, E. Altamirano Sanchez, Katia Devriendt, P. Rincon Delgadillo, F. Lazzarino, Jérôme Mitard, J. Geypen, E. Grieten, D. Batuk, Y.-F. Chen, F. Verbeek, F. Holsteyns, S. Subramanian, N. Horiguchi, S. Biesemans
2023 J jnl
Automatic Prediction of Metal-Oxide-Semiconductor Field-Effect Transistor Threshold Voltage Using Machine Learning Algorithm.
Adv. Intell. Syst.
Seoyeon Choi, Dong Geun Park, Min Jung Kim, Seain Bang, Jungchun Kim, Seunghee Jin, Ki Seok Huh, Donghyun Kim, Jérôme Mitard, Cheol E. Han, Jae Woo Lee
2023 J jnl
Automatic Prediction of Metal-Oxide-Semiconductor Field-Effect Transistor Threshold Voltage Using Machine Learning Algorithm.
Adv. Intell. Syst.
Seoyeon Choi, Dong Geun Park, Min Jung Kim, Seain Bang, Jungchun Kim, Seunghee Jin, Ki Seok Huh, Donghyun Kim, Jérôme Mitard, Cheol E. Han, Jae Woo Lee
2023 — conf
Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET.
VLSI Technology and Circuits
Hiroaki Arimura, S. Brus, Jacopo Franco, Yusuke Oniki, A. Vandooren, T. Conard, B. T. Chan, B. Kannan, M. Samiee, W. Li, P. Deminskyi, E. Shero, J. Bakke, Nicolas Jourdan, G. Alessio Verni, J. W. Maes, M. Givens, Lars-Åke Ragnarsson, Jérôme Mitard, E. Dentoni Litta, N. Horiguchi
2023 — conf
Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning.
VLSI Technology and Circuits
Hans Mertens, M. Hosseini, Thomas Chiarella, D. Zhou, S. Wang, G. Mannaert, E. Dupuy, D. Radisic, Z. Tao, Yusuke Oniki, Andriy Hikavyy, R. Rosseel, A. Mingardi, S. Choudhury, P. Puttarame Gowda, F. Sebaai, A. Peter, Kevin Vandersmissen, J. P. Soulie, An De Keersgieter, L. Petersen Barbosa Lima, C. Cavalcante, D. Batuk, G. T. Martinez, J. Geypen, F. Seidel, K. Paulussen, P. Favia, Jürgen Bömmels, Roger Loo, P. Wong, A. Sepulveda Marquez, B. T. Chan, Jérôme Mitard, S. Subramanian, S. Demuynck, E. Dentoni Litta, N. Horiguchi, S. Samavedam, S. Biesemans
2021 — conf
Detecting Transistor Defects in Medical Systems Using a Multi Model Ensemble of Convolutional Neural Networks.
IEEE BigData
Hüsnü Murat Koçak, Ahmet Teoman Naskali, Özgün Pinarer, Jérôme Mitard
2021 — conf
Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications.
ESSDERC
Hyungrock Oh, Attilio Belmonte, Manu Perumkunnil, Jérôme Mitard, Nouredine Rassoul, Gabriele Luca Donadio, Romain Delhougne, Arnaud Furnémont, Gouri Sankar Kar, Wim Dehaene
2021 — conf
Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies.
IRPS
Gerhard Rzepa, Markus Karner, Oskar Baumgartner, Georg Strof, Franz Schanovsky, Ferdinand Mitterbauer, Christian Kernstock, Hui-Wen Karner, Pieter Weckx, Geert Hellings, Dieter Claes, Zhicheng Wu, Yang Xiang, Thomas Chiarella, Bertrand Parvais, Jérôme Mitard, Jacopo Franco, Ben Kaczer, Dimitri Linten, Zlatan Stanojevic
2019 — conf
CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies.
IRPS
Shih-Hung Chen, Dimitri Linten, Geert Hellings, Marko Simicic, Ben Kaczer, Thomas Chiarella, Hans Mertens, Jérôme Mitard, Anda Mocuta, N. Horiguchi
2018 J jnl
Scalability comparison between raised- and embedded-SiGe source/drain structures for Si
Microelectron. Reliab.
Shimpei Yamaguchi, Liesbeth Witters, Jérôme Mitard, Geert Eneman, Geert Hellings, Andriy Hikavyy, Roger Loo, Naoto Horiguchi
2018 — conf
Scaling CMOS beyond Si FinFET: an analog/RF perspective.
ESSDERC
Bertrand Parvais, Geert Hellings, Marko Simicic, Pieter Weckx, Jérôme Mitard, Doyoung Jang, V. Deshpande, B. van Liempc, Anabela Veloso, A. Vandooren, Niamh Waldron, Piet Wambacq, Nadine Collaert, Diederik Verkest
2017 — conf
Isolation of nanowires made on bulk wafers by ground plane doping.
ESSDERC
Romain Ritzenthaler, Hans Mertens, An De Keersgieter, Jérôme Mitard, Dan Mocuta, N. Horiguchi
2016 — conf
Beyond-Si materials and devices for more Moore and more than Moore applications.
ICICDT
Nadine Collaert, AliReza Alian, Hiroaki Arimura, Geert Boccardi, Geert Eneman, Jacopo Franco, Tsvetan Ivanov, Dennis Lin, Jérôme Mitard, S. Ramesh, R. Rooyackers, Marc Schaekers, A. Sibaya-Hernandez, S. Sioncke, Quentin Smets, Abhitosh Vais, A. Vandooren, Anabela Veloso, Anne S. Verhulst, Devin Verreck, Niamh Waldron, Amey Walke, Liesbeth Witters, H. Yu, X. Zhou, Aaron Voon-Yew Thean
2016 — conf
Towards high performance sub-10nm finW bulk FinFET technology.
ESSDERC
Thomas Chiarella, Stefan Kubicek, E. Rosseel, Romain Ritzenthaler, Andriy Hikavyy, P. Eyben, An De Keersgieter, L.-Å. Ragnarsson, M.-S. Kim, S.-A. Chew, Tom Schram, S. Demuynck, Miroslav Cupák, Luc Rijnders, Morin Dehan, Naoto Horiguchi, Jérôme Mitard, Dan Mocuta, Anda Mocuta, Aaron Voon-Yew Thean
2012 J jnl
Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling.
IEEE Trans. Very Large Scale Integr. Syst.
Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann
2012 — conf
Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs.
ESSDERC
Tommaso Romeo, Luigi Pantisano, Eddy Simoen, Raymond Krom, Mitsuhiro Togo, N. Horiguchi, Jérôme Mitard, Aaron Thean, Guido Groeseneken, Cor Claeys, Felice Crupi
2012 — conf
Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks.
ESSDERC
Romain Ritzenthaler, Tom Schram, Erik Bury, Jérôme Mitard, L.-Å. Ragnarsson, Guido Groeseneken, N. Horiguchi, Aaron Thean, Alessio Spessot, Christian Caillat, V. Srividya, Pierre Fazan
2012 — conf
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications.
ICICDT
Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken
2011 C conf
Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling.
ISCAS
Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann
2007 J jnl
Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks.
Microelectron. Reliab.
Gilles Reimbold, Jérôme Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, François Martin