Jung-Hwan Choi

51 papers Journal 21Unranked 30

Year	Rank	Type	Title / Venue / Authors
2026	J	`jnl`	A Time-Based PAM-4 Transceiver Using Linear Voltage-to-Time Converter and Single Path PAM-4 Decoder with Fast-Stochastic Calibration. Circuits Syst. Signal Process. Dong-Hyun Yoon, He Junsen, Kiho Seong, Kwang-Hyun Baek, Youngdon Choi, Jung-Hwan Choi, Tony Tae-Hyoung Kim
2024	—	`conf`	A 10.5 Gbps 0.55 pJ/bit PAM-3 Transceiver Using a Self-driven Dual TIA Receiver and Floating Impedance Matching for Parallel On-chip Transmission Lines. A-SSCC Dong-Hyun Yoon, Junsen He, Kwang-Hyun Baek, Youngdon Choi, Jung-Hwan Choi, Tony Tae-Hyoung Kim
2024	J	`jnl`	A 32-Gb/s Single-Ended PAM-4 Transceiver With Asymmetric Termination and Equalization Techniques for Next-Generation Memory Interfaces. IEEE Trans. Circuits Syst. I Regul. Pap. Hyuntae Kim, Yunseong Jo, Sanghun Lee, Eunsang Lee, Young Choi, Jaewoo Park, Myoungbo Kwak, Jung-Hwan Choi, Youngdon Choi, Jaeduk Han
2024	J	`jnl`	A 4 ns Settling Time FVF-Based Fast LDO Using Bandwidth Extension Techniques for HBM3. IEEE J. Solid State Circuits Jinook Jung, Jun-Han Choi, Kyoung-Jun Roh, Jaewoo Park, Won-Mook Lim, Tae-sung Kim, Han-Ki Jeong, Myoungbo Kwak, Jaeyoun Youn, Jeong-Don Ihm, Changsik Yoo, Youngdon Choi, Jung-Hwan Choi, Hyungjong Ko
2023	J	`jnl`	A 12-Gb/s Baud-Rate Clock and Data Recovery With 75% Phase-Detection Probability by Precoding and Integration-Hold-Reset Frontend. IEEE Trans. Circuits Syst. II Express Briefs Hyeongmin Seo, Jiyun Han, Kyungmin Kim, Baek-Jin Lim, EunSeok Shin, Youngdon Choi, Hyungjong Ko, Jung-Hwan Choi, Sang-Hyun Lee, Changsik Yoo, Jaeduk Han
2023	J	`jnl`	A 16-Gb T-Coil-Based GDDR6 DRAM With Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus Achieving 27-Gb/s/Pin in NRZ. IEEE J. Solid State Circuits Daewoong Lee, Jaehyeok Baek, Hye-Jung Kwon, Daehyun Kwon, Chulhee Cho, Sang-Hoon Kim, Donggun An, Chulsoon Chang, Unhak Lim, Jiyeon Im, Wonju Sung, Hye-Ran Kim, Sun-Young Park, Hyoung-Joo Kim, Ho-Seok Seol, Juhwan Kim, Jung-Bum Shin, Gil-Young Kang, Yong-Hun Kim, Sooyoung Kim, Wansoo Park, Seok-Jung Kim, Chan-Yong Lee, SeungSeob Lee, Taehoon Park, Chi-Sung Oh, Hyodong Ban, Hyungjong Ko, Hoyoung Song, Tae-Young Oh, Sangjoon Hwang, Kyung Suk Oh, Jung-Hwan Choi, Jooyoung Lee
2023	—	`conf`	A 4ns Settling Time FVF-Based Fast LDO Using Bandwidth Extension Techniques for HBM3. A-SSCC Jinook Jung, Jun-Han Choi, Kyoung-Jun Roh, Jaewoo Park, Won-Mook Lim, Tae-sung Kim, Han-Ki Jeong, Myoungbo Kwak, Jaeyoun Youn, Jeong-Don Ihm, Changsik Yoo, Youngdon Choi, Jung-Hwan Choi, Hyungjong Ko
2023	J	`jnl`	A Charge Recycling Logic Data Links for Single- and Multiple-Channel I/Os. IEEE J. Solid State Circuits Han Wu, Jeong Hoan Park, Rucheng Jiang, Jung-Hwan Choi, Jerald Yoo
2023	—	`conf`	A Time-Based PAM-4 Transceiver Using Single Path Decoder and Fast-Stochastic Calibration Techniques. A-SSCC Dong-Hyun Yoon, He Junsen, Kwang-Hyun Baek, Youngdon Choi, Jung-Hwan Choi, Tony Tae-Hyoung Kim
2022	—	`conf`	A 16Gb 27Gb/s/pin T-coil based GDDR6 DRAM with Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus. ISSCC Daewoong Lee, Hye-Jung Kwon, Daehyun Kwon, Jaehyeok Baek, Chulhee Cho, Sanghoon Kim, Donggun An, Chulsoon Chang, Unhak Lim, Jiyeon Im, Wonju Sung, Hye-Ran Kim, Sun-Young Park, Hyoungjoo Kim, Ho-Seok Seol, Juhwan Kim, Junabum Shin, Kil-Youna Kang, Yong-Hun Kim, Sooyoung Kim, Wansoo Park, Seok-Jung Kim, Chanyong Lee, SeungSeob Lee, Taehoon Park, Chi Sung Oh, Hyodong Ban, Hyungjong Ko, Hoyoung Song, Tae-Young Oh, Sangjoon Hwang, Kyung Suk Oh, Jung-Hwan Choi, Jooyoung Lee
2022	—	`conf`	A 40-Gb/s/pin Low-Voltage POD Single-Ended PAM-4 Transceiver with Timing Calibrated Reset-less Slicer and Bidirectional T-Coil for GDDR7 Application. VLSI Technology and Circuits Hyunsub Norbert Rie, Chang Soo Yoon, Jindo Byun, Sucheol Lee, Garam Kim, Joohwan Kim, Junyoung Park, Hyunyoon Cho, Youngdo Um, Hyungmin Jin, Kwangseob Shin, Minsu Jung, Go-Eun Cha, Minjae Lee, Youngmin Kim, Byeori Han, Yuseong Jeon, Jisun Lee, EunSeok Shin, Hyuk-Jun Kwon, Youngdon Choi, Jung-Hwan Choi, Hyungjong Ko
2022	—	`conf`	A 430-MS/s 7-b Asynchronous SAR ADC With a 40 fF Input Sampling Capacitor. ISOCC Hyoung-Jung Kim, Jae-Hyuk Lee, Jae-Geun Lim, Jun-Ho Boo, Ho-Jin Kim, Seong-Bo Park, Youngdon Choi, Jung-Hwan Choi, Gil-Cho Ahn
2022	—	`conf`	A 60-Gb/s/pin single-ended PAM-4 transmitter with timing skew training and low power data encoding in mimicked 10nm class DRAM process. CICC Joohwan Kim, Junyoung Park, Jindo Byun, Changkyu Seol, Chang Soo Yoon, EunSeok Shin, Hyunyoon Cho, Youngdo Um, Sucheol Lee, Hyungmin Jin, Kwangseob Shin, Hyunsub Norbert Rie, Minsu Jung, Jin-Hee Park, Go-Eun Cha, Minjae Lee, Youngmin Kim, Byeori Han, Yuseong Jeon, Jisun Lee, Hyejeong So, Sungduk Kim, Wansoo Park, Tae Young Kim, Youngdon Choi, Jung-Hwan Choi, Hyungjong Ko, Sang-Hyun Lee
2022	J	`jnl`	Guest Editorial Introduction to the Special Section on the 2021 Asian Solid-State Circuits Conference (A-SSCC). IEEE J. Solid State Circuits Jung-Hwan Choi, Po-Chiun Huang, Shouyi Yin, Woogeun Rhee
2021	—	`conf`	A 24Gb/s/pin PAM-4 Built Out Tester chip enabling PAM-4 chips test with NRZ interface ATE. A-SSCC Hyungmin Jin, Jindo Byun, Hyunyoon Cho, Hojun Yoon, Jin-Hee Park, Kyoungsoo Kim, Youngdon Choi, Jung-Hwan Choi, Hyungjong Ko, Sang-Hyun Lee
2021	—	`conf`	A 3.2-12.8Gb/s Duty-Cycle Compensating Quadrature Error Corrector for DRAM Interfaces, With Fast Locking and Low Power Characteristics. ESSCIRC Hojun Yoon, Wonjoo Jung, Jaewoo Park, Jindo Byun, Hyungmin Jin, Hyunyoon Cho, Youngmin Kim, Baek-Jin Lim, Young-Chul Cho, Youngdon Choi, Jung-Hwan Choi, Hyungjong Ko, Changsik Yoo, Sang-Hyun Lee
2020	—	`conf`	13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate. ISSCC Doo-Hyun Kim, Hyunggon Kim, Sung-Won Yun, Youngsun Song, Jisu Kim, Sung-Min Joe, Kyung-Hwa Kang, Joonsuc Jang, Hyun-Jun Yoon, Kangbin Lee, Minseok Kim, Joonsoo Kwon, Jonghoo Jo, Sehwan Park, Jiyoon Park, Jisoo Cho, Sohyun Park, Garam Kim, Jinbae Bang, Heejin Kim, Jongeun Park, Deokwoo Lee, SeonYong Lee, Hwajun Jang, Hanjun Lee, Donghyun Shin, Jungmin Park, Jungkwan Kim, Jongmin Kim, Kichang Jang, II Han Park, Seung Hyun Moon, Myung-Hoon Choi, Pansuk Kwak, Joo-Yong Park, Youngdon Choi, Sanglok Kim, Seungjae Lee, Dongku Kang, Jeong-Don Lim, Dae-Seok Byeon, Ki-Whan Song, Jung-Hwan Choi, Sangjoon Hwang, Jaeheon Jeong
2019	J	`jnl`	A 16-Gb, 18-Gb/s/pin GDDR6 DRAM With Per-Bit Trainable Single-Ended DFE and PLL-Less Clocking. IEEE J. Solid State Circuits Young-Ju Kim, Hye-Jung Kwon, Su-Yeon Doo, Min-Su Ahn, Yong-Hun Kim, Yong Jae Lee, Dong-Seok Kang, Sung-Geun Do, Chang-Yong Lee, Gun-hee Cho, Jae-Koo Park, Jae-Sung Kim, Kyung-Bae Park, Seung-Hoon Oh, Sang-Yong Lee, Ji-Hak Yu, Ki-Hun Yu, Chul-Hee Jeon, Sang-Sun Kim, Hyun-Soo Park, Jeong-Woo Lee, Seung-Hyun Cho, Keon-woo Park, Yong-Jun Kim, Young-Hun Seo, Chang-Ho Shin, Chan-Yong Lee, Sam-Young Bang, Youn-Sik Park, Seouk-Kyu Choi, Byung-Cheol Kim, Gong-Heum Han, Seung-Jun Bae, Hyuk-Jun Kwon, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin
2019	—	`conf`	A 5Gb/s/pin 16Gb LPDDR4/4X Reconfigurable SDRAM with Voltage-High Keeper and a Prediction-based Fast-tracking ZQ Calibration. VLSI Circuits Jin-Seok Heo, Kihan Kim, Dong-Hoon Lee, Chang-Kyo Lee, Daesik Moon, Kiho Kim, Jin-Hyeok Baek, Sung-Woo Yoon, Hui-Kap Yang, Kyungryun Kim, Youngjae Kim, Bokgue Park, Su-Jin Park, Joung-Wook Moon, Jae-Hyung Lee, Yun-Sik Park, Soobong Jang, Seok-Hun Hyun, Hyuck-Joon Kwon, Jung-Hwan Choi, Young-Soo Sohn, Seung-Jun Bae, Kwang-Il Park, Jung-Bae Lee
2019	—	`conf`	A 7.5Gb/s/pin LPDDR5 SDRAM With WCK Clocking and Non-Target ODT for High Speed and With DVFS, Internal Data Copy, and Deep-Sleep Mode for Low Power. ISSCC Kyung-Soo Ha, Chang-Kyo Lee, Dongkeon Lee, Daesik Moon, Jin-Hun Jang, Hyong-Ryol Hwang, Hyung-Joon Chi, Junghwan Park, Seungjun Shin, Dukha Park, Sang-Yun Kim, Sukhyun Lim, Kiwon Park, YeonKyu Choi, Young-Hwa Kim, Younghoon Son, Hyunyoon Cho, Byongwook Na, Hyo-Joo Ahn, SeungSeob Lee, Seouk-Kyu Choi, Youn-Sik Park, Seok-Hun Hyun, Soobong Chang, Hyuck-Joon Kwon, Jung-Hwan Choi, Tae-Young Oh, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang
2019	J	`jnl`	Mutual Interference Suppression and Signal Restoration in Automotive FMCW Radar Systems. IEICE Trans. Commun. Sohee Lim, Seongwook Lee, Jung-Hwan Choi, Jungmin Yoon, Seong-Cheol Kim
2018	—	`conf`	A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking. ISSCC Young-Ju Kim, Hye-Jung Kwon, Su-Yeon Doo, Yoon-Joo Eom, Young-Sik Kim, Min-Su Ahn, Yong-Hun Kim, Sang-Hoon Jung, Sung-Geun Do, Chang-Yong Lee, Jae-Sung Kim, Dong-Seok Kang, Kyung-Bae Park, Jung-Bum Shin, Jong-Ho Lee, Seung-Hoon Oh, Sang-Yong Lee, Ji-Hak Yu, Ji-Suk Kwon, Ki-Hun Yu, Chul-Hee Jeon, Sang-Sun Kim, Min-Woo Won, Gun-hee Cho, Hyun-Soo Park, Hyung-Kyu Kim, Jeong-Woo Lee, Seung-Hyun Cho, Keon-woo Park, Jae-Koo Park, Yong Jae Lee, Yong-Jun Kim, Young-Hun Seo, Beob-Rae Cho, Chang-Ho Shin, Chan-Yong Lee, Youngseok Lee, Yoon-Gue Song, Sam-Young Bang, Youn-Sik Park, Seouk-Kyu Choi, Byeong-Cheol Kim, Gong-Heum Han, Seung-Jun Bae, Hyuk-Jun Kwon, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang
2018	—	`conf`	A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process. ISSCC Ki Chul Chun, Yonggyu Chu, Jin-Seok Heo, Tae-sung Kim, Soohwan Kim, Hui-Kap Yang, Mi-Jo Kim, Chang-Kyo Lee, Ju-Hwan Kim, Hyunchul Yoon, Chang-Ho Shin, Sang-uhn Cha, Hyung-Jin Kim, Young-Sik Kim, Kyungryun Kim, Young-Ju Kim, Won-Jun Choi, Daesik Yim, Inkyu Moon, Young-Ju Kim, Junha Lee, Young Choi, Yongmin Kwon, Sung-Won Choi, Jung-Wook Kim, Yoon-Suk Park, Woongdae Kang, Jinil Chung, Seunghyun Kim, Yesin Ryu, Seong-Jin Cho, Hoon Shin, Hangyun Jung, Sanghyuk Kwon, Kyuchang Kang, Jongmyung Lee, Yujung Song, Youngjae Kim, Eun-Ah Kim, Kyung-Soo Ha, Kyoung-Ho Kim, Seok-Hun Hyun, Seung-Bum Ko, Jung-Hwan Choi, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang
2018	J	`jnl`	A Time-Based Receiver With 2-Tap Decision Feedback Equalizer for Single-Ended Mobile DRAM Interface. IEEE J. Solid State Circuits Il-Min Yi, Min-Kyun Chae, Seok-Hun Hyun, Seung-Jun Bae, Jung-Hwan Choi, Seong-Jin Jang, Byungsub Kim, Jae-Yoon Sim, Hong-June Park
2018	—	`conf`	A sub-0.85V, 6.4GBP/S/Pin TX-Interleaved Transceiver with Fast Wake-Up Time Using 2-Step Charging Control and VOHCalibration in 20NM DRAM Process. VLSI Circuits Jin-Hyeok Baek, Chang-Kyo Lee, Kiho Kim, Daesik Moon, Gil-Hoon Cha, Jin-Seok Heo, Min-Su Ahn, Dong-Ju Kim, Jae-Joon Song, Seokhong Kwon, Jongmin Kim, Kyung-Soo Kim, Jinoh Ahn, Jeong-Sik Nam, Byung-Cheol Kim, Jeong-Hyeon Cho, Jeonghoon Oh, Seung-Jun Bae, Indal Song, Seok-Hun Hyun, Ilgweon Kim, Hyuck-Joon Kwon, Young-Soo Sohn, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang
2018	—	`conf`	An Enhanced Built-off-Test Transceiver with Wide-range, Self-calibration Engine for 3.2 Gb/s/pin DDR4 SDRAM. A-SSCC Joung-Wook Moon, Hye-Sung Yoo, Hundai Choi, Il-Won Park, Seok-Yong Kang, Jun-Bae Kim, Haeyoung Chung, Kiho Kim, Dong-Hun Lee, Ki-Jae Song, Seok-Hun Hyun, Indal Song, Young-Soo Sohn, Yong-Ho Cho, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang
2018	J	`jnl`	Delay Monitoring System With Multiple Generic Monitors for Wide Voltage Range Operation. IEEE Trans. Very Large Scale Integr. Syst. Jongho Kim, Kiyoung Choi, Yonghwan Kim, Wook Kim, Kyung Tae Do, Jung-Hwan Choi
2018	J	`jnl`	Dual-Loop Two-Step ZQ Calibration for Dynamic Voltage-Frequency Scaling in LPDDR4 SDRAM. IEEE J. Solid State Circuits Chang-Kyo Lee, Junha Lee, Kiho Kim, Jin-Seok Heo, Jin-Hyeok Baek, Gil-Hoon Cha, Daesik Moon, Dong-Hun Lee, Jong-Wook Park, Seunseob Lee, Si-Hyeong Cho, Young-Ryeol Choi, Kyung-Soo Ha, Eunsung Seo, Youn-Sik Park, Seung-Jun Bae, Indal Song, Seok-Hun Hyun, Hyuck-Joon Kwon, Young-Soo Sohn, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang
2017	—	`conf`	23.2 A 5Gb/s/pin 8Gb LPDDR4X SDRAM with power-isolated LVSTL and split-die architecture with 2-die ZQ calibration scheme. ISSCC Chang-Kyo Lee, Yoon-Joo Eom, Jin-Hee Park, Junha Lee, Hye-Ran Kim, Kihan Kim, Young Choi, Ho-Jun Chang, Jonghyuk Kim, Jong-Min Bang, Seungjun Shin, Hanna Park, Su-Jin Park, Young-Ryeol Choi, Hoon Lee, Kyong-Ho Jeon, Jae-Young Lee, Hyo-Joo Ahn, Kyoung-Ho Kim, Jung-Sik Kim, Soobong Chang, Hyong-Ryol Hwang, Duyeul Kim, Yoon-Hwan Yoon, Seok-Hun Hyun, Joon-Young Park, Yoon-Gyu Song, Youn-Sik Park, Hyuck-Joon Kwon, Seung-Jun Bae, Tae-Young Oh, Indal Song, Yong-Cheol Bae, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin
2017	—	`conf`	23.4 An extremely low-standby-power 3.733Gb/s/pin 2Gb LPDDR4 SDRAM for wearable devices. ISSCC Hye-Jung Kwon, Eunsung Seo, Changyong Lee, Young-Hun Seo, Gong-Heum Han, Hye-Ran Kim, Jong-Ho Lee, Min-Su Jang, Sung-Geun Do, Seung-Hyun Cho, Jae-Koo Park, Su-Yeon Doo, Jung-Bum Shin, Sang-Hoon Jung, Hyoung-Ju Kim, In-Ho Im, Beob-Rae Cho, Jaewoong Lee, Jae-Youl Lee, Ki-Hun Yu, Hyung-Kyu Kim, Chul-Hee Jeon, Hyun-Soo Park, Sang-Sun Kim, Seok-Ho Lee, Jong-Wook Park, Seung-Sub Lee, Bo-Tak Lim, Jun-Young Park, Yoon-Sik Park, Hyuk-Jun Kwon, Seung-Jun Bae, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin
2017	—	`conf`	23.7 A time-based receiver with 2-tap DFE for a 12Gb/s/pin single-ended transceiver of mobile DRAM interface in 0.8V 65nm CMOS. ISSCC Il-Min Yi, Min-Kyun Chae, Seok-Hun Hyun, Seung-Jun Bae, Jung-Hwan Choi, Seong-Jin Jang, Byungsub Kim, Jae-Yoon Sim, Hong-June Park
2017	J	`jnl`	A 1.2 V 20 nm 307 GB/s HBM DRAM With At-Speed Wafer-Level IO Test Scheme and Adaptive Refresh Considering Temperature Distribution. IEEE J. Solid State Circuits Kyomin Sohn, Won-Joo Yun, Reum Oh, Chi-Sung Oh, Seong-Young Seo, Min-Sang Park, Dong-Hak Shin, Won-Chang Jung, Sang-Hoon Shin, Je-Min Ryu, Hye-Seung Yu, Jae-Hun Jung, Hyunui Lee, Seok-Yong Kang, Young-Soo Sohn, Jung-Hwan Choi, Yong-Cheol Bae, Seong-Jin Jang, Gyo-Young Jin
2017	—	`conf`	Dual-loop 2-step ZQ calibration for dedicated power supply voltage in LPDDR4 SDRAM. A-SSCC Chang-Kyo Lee, Junha Lee, Kiho Kim, Jin-Seok Heo, Gil-Hoon Cha, Jin-Hyeok Baek, Daesik Moon, Yoon-Joo Eom, Tae-sung Kim, Hyunyoon Cho, Young Hoon Son, Seonghwan Kim, Jong-Wook Park, Sewon Eom, Si-Hyeong Cho, Young-Ryeol Choi, SeungSeob Lee, Kyoung-Soo Ha, Youngseok Kim, Bo-Tak Lim, Dae-Hee Jung, Eungsung Seo, Kyoung-Ho Kim, Yoon-Gyu Song, Youn-Sik Park, Tae-Young Oh, Seung-Jun Bae, Indal Song, Seok-Hun Hyun, Joon-Young Park, Hyuck-Joon Kwon, Young-Soo Sohn, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang
2016	—	`conf`	18.2 A 1.2V 20nm 307GB/s HBM DRAM with at-speed wafer-level I/O test scheme and adaptive refresh considering temperature distribution. ISSCC Kyomin Sohn, Won-Joo Yun, Reum Oh, Chi-Sung Oh, Seong-Young Seo, Min-Sang Park, Dong-Hak Shin, Won-Chang Jung, Sang-Hoon Shin, Je-Min Ryu, Hye-Seung Yu, Jae-Hun Jung, Kyung-Woo Nam, Seouk-Kyu Choi, Jae-Wook Lee, Uksong Kang, Young-Soo Sohn, Jung-Hwan Choi, Chi-Wook Kim, Seong-Jin Jang, Gyo-Young Jin
2016	J	`jnl`	A 40 mV-Differential-Channel-Swing Transceiver Using a RX Current-Integrating TIA and a TX Pre-Emphasis Equalizer With a CML Driver at 9 Gb/s. IEEE Trans. Circuits Syst. I Regul. Pap. Il-Min Yi, Soo-Min Lee, Seung-Jun Bae, Young-Soo Sohn, Jung-Hwan Choi, Seong-Jin Jang, Byungsub Kim, Jae-Yoon Sim, Hong-June Park
2016	—	`conf`	A low-EMI four-bit four-wire single-ended DRAM interface by using a three-level balanced coding scheme. VLSI Circuits Il-Min Yi, Seung-Jun Bae, Min-Kyun Chae, Soo-Min Lee, Young Jae Jang, Young-Chul Cho, Young-Soo Sohn, Jung-Hwan Choi, Seong-Jin Jang, Byungsub Kim, Jae-Yoon Sim, Hong-June Park
2016	—	`conf`	Design of non-contact 2Gb/s I/O test methods for high bandwidth memory (HBM). A-SSCC Hyunui Lee, Sukyong Kang, Hye-Seung Yu, Won-Joo Yun, Jae-Hun Jung, Sungoh Ahn, Wang-Soo Kim, Beomyong Kil, Yoo-Chang Sung, Sang-Hoon Shin, Yong-Sik Park, Yong-Hwan Kim, Kyung-Woo Nam, Indal Song, Kyomin Sohn, Yong-Cheol Bae, Jung-Hwan Choi, Seong-Jin Jang, Gyo-Young Jin
2016	J	`jnl`	Mutual Interference Suppression Using Clipping and Weighted-Envelope Normalization for Automotive FMCW Radar Systems. IEICE Trans. Commun. Jung-Hwan Choi, Han-Byul Lee, Jiwon Choi, Seong-Cheol Kim
2015	—	`conf`	17.7 A digital DLL with hybrid DCC using 2-step duty error extraction and 180° phase aligner for 2.67Gb/S/pin 16Gb 4-H stack DDR4 SDRAM with TSVs. ISSCC Won-Joo Yun, Indal Song, Hanki Jeoung, Hundai Choi, Seok-Ho Lee, Jun-Bae Kim, Chi-Wook Kim, Jung-Hwan Choi, Seong-Jin Jang, Joo-Sun Choi
2015	—	`conf`	A 6.4Gb/s/pin at sub-1V supply voltage TX-interleaving technique for mobile DRAM interface. VLSIC Chang-Kyo Lee, Min-Su Ahn, Daesik Moon, Kiho Kim, Yoon-Joo Eom, Won-Young Lee, Jongmin Kim, Sanghyuk Yoon, Baekkyu Choi, Seokhong Kwon, Joon-Young Park, Seung-Jun Bae, Yong-Cheol Bae, Jung-Hwan Choi, Seong-Jin Jang, Gyo-Young Jin
2014	J	`jnl`	A 40-mV-Swing Single-Ended Transceiver for TSV with a Switched-Diode RX Termination. IEEE Trans. Circuits Syst. II Express Briefs Il-Min Yi, Soo-Min Lee, Seung-Jun Bae, Young-Soo Sohn, Jung-Hwan Choi, Byungsub Kim, Jae-Yoon Sim, Hong-June Park
2014	—	`conf`	Design technologies for a 1.2V 2.4Gb/s/pin high capacity DDR4 SDRAM with TSVs. VLSIC Reum Oh, ByungHyun Lee, Sang-Woong Shin, Wonil Bae, Hundai Choi, Indal Song, Yun-Sang Lee, Jung-Hwan Choi, Chi-Wook Kim, Seong-Jin Jang, Joo-Sun Choi
2013	J	`jnl`	A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme. IEEE J. Solid State Circuits Kyomin Sohn, Taesik Na, Indal Song, Yong Shim, Wonil Bae, Sanghee Kang, Dongsu Lee, Hangyun Jung, Seok-Hun Hyun, Hanki Jeoung, Ki Won Lee, Jun-Seok Park, Jongeun Lee, ByungHyun Lee, Inwoo Jun, Juseop Park, Junghwan Park, Hundai Choi, Sanghee Kim, Haeyoung Chung, Young Choi, Dae-Hee Jung, Byungchul Kim, Jung-Hwan Choi, Seong-Jin Jang, Chi-Wook Kim, Jung-Bae Lee, Joo-Sun Choi
2012	—	`conf`	A 1.2V 30nm 3.2Gb/s/pin 4Gb DDR4 SDRAM with dual-error detection and PVT-tolerant data-fetch scheme. ISSCC Kyomin Sohn, Taesik Na, Indal Song, Yong Shim, Wonil Bae, Sanghee Kang, Dongsu Lee, Hangyun Jung, Hanki Jeoung, Ki Won Lee, Junsuk Park, Jongeun Lee, ByungHyun Lee, Inwoo Jun, Juseop Park, Junghwan Park, Hundai Choi, Sanghee Kim, Haeyoung Chung, Young Choi, Dae-Hee Jung, Jang Seok Choi, Byung-Sick Moon, Jung-Hwan Choi, Byungchul Kim, Seong-Jin Jang, Joo-Sun Choi, Kyungseok Oh
2010	J	`jnl`	8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology. IEEE J. Solid State Circuits Uksong Kang, Hoeju Chung, Seongmoo Heo, Dukha Park, Hoon Lee, Jin Ho Kim, Soon-Hong Ahn, Sooho Cha, Jaesung Ahn, Dukmin Kwon, Jae-Wook Lee, Han-Sung Joo, Woo-Seop Kim, Dong Hyeon Jang, Nam-Seog Kim, Jung-Hwan Choi, Tae-Gyeong Chung, Jei-Hwan Yoo, Joo-Sun Choi, Changhyun Kim, Young-Hyun Jun
2010	—	`conf`	A Spatial Correlation Model for Shadow Fading in Indoor Multipath Propagation. VTC Fall Nam-Ryul Jeon, Kyung-Hoe Kim, Jung-Hwan Choi, Seong-Cheol Kim
2009	—	`conf`	1.2V 1.6Gb/s 56nm 6F ISSCC Yongsam Moon, Yong-Ho Cho, Hyun-Bae Lee, Byung-Hoon Jeong, Seok-Hun Hyun, Byungchul Kim, In-Chul Jeong, Seong-Young Seo, Junho Shin, Seok-Woo Choi, Ho-Sung Song, Jung-Hwan Choi, Kyehyun Kyung, Young-Hyun Jun, Kinam Kim
2005	J	`jnl`	A 3.6-Gb/s point-to-point heterogeneous-voltage-capable DRAM interface for capacity-scalable memory subsystems. IEEE J. Solid State Circuits Joseph T. Kennedy, Randy Mooney, Robert Ellis, James E. Jaussi, Shekhar Borkar, Jung-Hwan Choi, Jae-Kwan Kim, Chan-Kyong Kim, Woo-Seop Kim, Chang-Hyun Kim, Soo-In Cho, Steffen Loeffler, Jochen Hoffmann, Wolfgang Hokenmaier, Russ Houghton, Thomas Vogelsang
2005	J	`jnl`	A 4-Gb/s/pin low-power memory I/O interface using 4-level simultaneous bi-directional signaling. IEEE J. Solid State Circuits Jin-hyun Kim, Sua Kim, Woo-Seop Kim, Jung-Hwan Choi, Hong-Sun Hwang, Changhyun Kim, Suki Kim
2004	—	`conf`	A low power capacitive coupled bus interface based on pulsed signaling. CICC Jongsun Kim, Jung-Hwan Choi, Changhyun Kim, A. F. Chang, Ingrid Verbauwhede
1999	J	`jnl`	A 2.5-V, 72-Mbit, 2.0-GByte/s packet-based DRAM with a 1.0-Gbps/pin interface. IEEE J. Solid State Circuits Changhyun Kim, Kye-Hyun Kyung, W.-P. Jeong, J.-S. Kim, Byung-Sik Moon, Joon-Wan Chai, S.-M. Yim, Jung-Hwan Choi, K.-H. Han, C.-J. Park, Hong-Sun Hwang, H. Choi, Sung-Burn Cho, Clemenz L. Portmann, Soo-In Cho