João Antonio Martino

16 papers Journal 10Unranked 4
YearRankTypeTitle / Venue / Authors
2021 J jnl
Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devices.
Microelectron. J.
Carlos H. S. Coelho, João Antonio Martino, Marcello Bellodi, Eddy Simoen, Anabela Veloso, Paula Ghedini Der Agopian
2019 — conf
Performance evaluation of Tunnel-FET basic amplifier circuits.
LASCAS
R. S. Rangel, Paula Ghedini Der Agopian, João Antonio Martino
2019 — ed.
Proceedings of the 32nd Symposium on Integrated Circuits and Systems Design, SBCCI 2019, Sao Paulo, Brazil, August 26-30, 2019.
SBCCI
João Antonio Martino, Marcelo Lubaszewski, Matteo Sonza Reorda
2019 J jnl
Tradeoff between the transistor reconfigurable technology and the zero-temperature-coefficient (ZTC) bias point on
Microelectron. J.
Katia Regina Akemi Sasaki, Ricardo C. Rangel, Leonardo S. Yojo, João Antonio Martino
2014 J jnl
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation.
Microelectron. Reliab.
Maria Glória Caño de Andrade, João Antonio Martino, Marc Aoulaiche, Nadine Collaert, Eddy Simoen, Cor Claeys
2012 J jnl
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices.
Microelectron. Reliab.
Renan Trevisoli Doria, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello
2010 — ed.
Proceedings of the 23rd Annual Symposium on Integrated Circuits and Systems Design, SBCCI 2010, São Paulo, Brazil, September 6-9, 2010
SBCCI
João Antonio Martino, Guido Araujo, Alex Orailoglu, Felipe Klein
2007 J jnl
Study of the linear kink effect in PD SOI nMOSFETs.
Microelectron. J.
Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys
2006 J jnl
Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications.
Microelectron. J.
Marcelo Antonio Pavanello, Paula Ghedini Der Agopian, João Antonio Martino, Denis Flandre
2006 J jnl
Evaluation of graded-channel SOI MOSFET operation at high temperatures.
Microelectron. J.
Milene Galeti, Marcelo Antonio Pavanello, João Antonio Martino
2006 J jnl
Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS.
Microelectron. J.
Salvador Pinillos Gimenez, Marcelo Antonio Pavanello, João Antonio Martino, Denis Flandre
2006 J jnl
Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS.
Microelectron. J.
Paula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys
2006 J jnl
The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs.
Microelectron. J.
L. M. Camillo, João Antonio Martino, Eddy Simoen, Cor Claeys
2003 — conf
Design of Operational Transconductance Amplifiers with Improved Gain by Using Graded-Channel SOI nMOSFETs.
SBCCI
Salvador Pinillos Gimenez, Marcelo Antonio Pavanello, João Antonio Martino, Stephane Adriaensen, Denis Flandre
2001 — conf
Analog Circuit Design Using Graded-Channel SOI NMOSFETS.
SBCCI
Marcelo Antonio Pavanello, João Antonio Martino, Denis Flandre
2000 — conf
Determination of Silicon Film Thickness in SOI Capacitors.
LATW
Victor Sonnenberg, João Antonio Martino