José Rebollo

17 papers Journal 16Unranked 1
YearRankTypeTitle / Venue / Authors
2024 J jnl
Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs.
IEEE Trans. Ind. Electron.
Oriol Avino-Salvado, Cyril Buttay, Ferran Bonet, Christophe Raynaud, Pascal Bevilacqua, José Rebollo, Hervé Morel, Xavier Perpiñà
2019 J jnl
Solid-State Relay Solutions for Induction Cooking Applications Based on Advanced Power Semiconductor Devices.
IEEE Trans. Ind. Electron.
Manuel Fernandez, Xavier Perpiñà, José Rebollo, Miquel Vellvehí, David Sanchez, Tomás Cabeza, Sergio Llorente, Xavier Jordà
2017 J jnl
High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide.
IEEE Trans. Ind. Electron.
Victor Soler, Maria Cabello, Maxime Berthou, Josep Montserrat, José Rebollo, Philippe Godignon, Andrei Mihaila, Maria R. Rogina, Alberto Rodriguez, Javier Sebastián
2015 — conf
Experimental analysis of planar edge terminations for high voltage 4H-SiC devices.
ESSDERC
Victor Soler, Maxime Berthou, Andrei Mihaila, Josep Montserrat, Philippe Godignon, José Rebollo, José Millán
2012 J jnl
Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling.
Microelectron. Reliab.
Ignasi Cortés, Xavier Perpiñà, Jesús Urresti, Xavier Jordà, José Rebollo
2011 J jnl
Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions.
IEEE Trans. Ind. Electron.
Xavier Perpiñà, Jean-François Serviere, Jesús Urresti-Ibañez, Ignasi Cortés, Xavier Jordà, Salvador Hidalgo, José Rebollo, Michel Mermet-Guyennet
2011 J jnl
Long-Term Reliability of Railway Power Inverters Cooled by Heat-Pipe-Based Systems.
IEEE Trans. Ind. Electron.
Xavier Perpiñà, Xavier Jordà, Miquel Vellvehí, José Rebollo, Michel Mermet-Guyennet
2008 J jnl
Analysis of punch-through breakdown in bulk silicon RF power LDMOS transistors.
Microelectron. Reliab.
Ignasi Cortés, Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, José Rebollo
2008 J jnl
IGBT module failure analysis in railway applications.
Microelectron. Reliab.
X. Perpiñà, Jean-François Serviere, Xavier Jordà, A. Fauquet, Salvador Hidalgo, Jesús Urresti-Ibañez, José Rebollo, Michel Mermet-Guyennet
2008 J jnl
Superjunction LDMOS on thick-SOI technology for RF applications.
Microelectron. J.
Ignasi Cortés, Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, José Rebollo
2007 J jnl
Robustness test and failure analysis of IGBT modules during turn-off.
Microelectron. Reliab.
Jesús Urresti-Ibañez, Alberto Castellazzi, M. Piton, José Rebollo, Michel Mermet-Guyennet, Mauro Ciappa
2005 J jnl
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile.
Microelectron. Reliab.
Ignasi Cortés, Jaume Roig, David Flores, Jesús Urresti, Salvador Hidalgo, José Rebollo
2005 J jnl
Lateral punch-through TVS devices for on-chip protection in low-voltage applications.
Microelectron. Reliab.
Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, Ignasi Cortés, José Rebollo
2004 J jnl
Design considerations for 6.5 kV IGBT devices.
Microelectron. J.
Miquel Vellvehí, David Flores, Xavier Jordà, Salvador Hidalgo, José Rebollo, L. Coulbeck, P. Waind
2004 J jnl
Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications.
Microelectron. J.
Jaume Roig, David Flores, Salvador Hidalgo, José Rebollo, José Millán
2003 J jnl
Optimisation of very low voltage TVS protection devices.
Microelectron. J.
Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, José Rebollo, I. Mazarredo
2002 J jnl
Reduction of self-heating effect on SOIM devices.
Microelectron. Reliab.
Jaume Roig, David Flores, Miquel Vellvehí, José Rebollo, José Millán