José Millán

20 papers Journal 15Unranked 5
YearRankTypeTitle / Venue / Authors
2016 J jnl
Power cycling analysis method for high-voltage SiC diodes.
Microelectron. Reliab.
Viorel Banu, Victor Soler, Josep Montserrat, José Millán, Philippe Godignon
2015 — conf
Experimental analysis of planar edge terminations for high voltage 4H-SiC devices.
ESSDERC
Victor Soler, Maxime Berthou, Andrei Mihaila, Josep Montserrat, Philippe Godignon, José Rebollo, José Millán
2015 J jnl
SiC Integrated Circuit Control Electronics for High-Temperature Operation.
IEEE Trans. Ind. Electron.
Mihaela Alexandru, Viorel Banu, Xavier Jordà, Josep Montserrat, Miquel Vellvehí, Dominique Tournier, José Millán, Philippe Godignon
2014 — conf
A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs.
ESSDERC
Matthieu Florentin, José Millán, Philippe Godignon, Mihaela Alexandru, Aurore Constant, Bernd Schmidt
2013 — conf
4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits.
ESSDERC
Mihaela Alexandru, Viorel Banu, Philippe Godignon, Miquel Vellvehí, José Millán
2013 — conf
High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs.
ESSCIRC
Viorel Banu, Philippe Godignon, Mihaela Alexandru, Miquel Vellvehí, Xavier Jordà, José Millán
2012 J jnl
Enhanced power cycling capability of SiC Schottky diodes using press pack contacts.
Microelectron. Reliab.
Viorel Banu, Philippe Godignon, Xavier Perpiñà, Xavier Jordà, José Millán
2012 — conf
High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C.
ESSDERC
Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens
2012 J jnl
Wafer scale and reliability investigation of thin HfO
Microelectron. Reliab.
Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, Herbert De Vleeschouwer, John M. Parsey, Peter Moens
2008 J jnl
Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress.
Microelectron. Reliab.
Viorel Banu, Pierre Brosselard, Xavier Jordà, Josep Montserrat, Philippe Godignon, José Millán
2007 J jnl
Coupled electro-thermal simulation of a DC/DC converter.
Microelectron. Reliab.
Miquel Vellvehí, Xavier Jordà, Philippe Godignon, Carles Ferrer, José Millán
2007 J jnl
Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities.
Microelectron. Reliab.
X. Perpiñà, Alberto Castellazzi, M. Piton, Michel Mermet-Guyennet, José Millán
2007 J jnl
Local thermal cycles determination in thermosyphon-cooled traction IGBT modules reproducing mission profiles.
Microelectron. Reliab.
X. Perpiñà, M. Piton, Michel Mermet-Guyennet, Xavier Jordà, José Millán
2007 J jnl
Wide band-gap power semiconductor devices.
IET Circuits Devices Syst.
José Millán
2006 J jnl
Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current.
Microelectron. Reliab.
X. Perpiñà, Jean-François Serviere, J. Saiz, Davide Barlini, Michel Mermet-Guyennet, José Millán
2004 J jnl
IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.
Microelectron. J.
Amador Pérez-Tomás, Xavier Jordà, Philippe Godignon, Jose Luis Gálvez, Miquel Vellvehí, José Millán
2004 J jnl
Self-heating experimental study of 600V PT-IGBTs under low dissipation energies.
Microelectron. J.
Xavier Perpiñà, Xavier Jordà, N. Mestres, Miquel Vellvehí, Philippe Godignon, José Millán
2004 J jnl
Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications.
Microelectron. J.
Jaume Roig, David Flores, Salvador Hidalgo, José Rebollo, José Millán
2002 J jnl
Reduction of self-heating effect on SOIM devices.
Microelectron. Reliab.
Jaume Roig, David Flores, Miquel Vellvehí, José Rebollo, José Millán
2001 J jnl
The electron irradiation effects on silicon gate dioxide used for power MOS devices.
Microelectron. Reliab.
Marian Badila, Philippe Godignon, José Millán, S. Berberich, Gheorghe Brezeanu