Josef Lutz

27 papers Journal 22Unranked 5
YearRankTypeTitle / Venue / Authors
2021 — conf
Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density.
IRPS
Shanmuganathan Palanisamy, Thomas Basler, Josef Lutz, Cesare Künzel, Larissa Wehrhahn-Kilian, Rudolf Elpelt
2020 — conf
Specific aspects regarding evaluation of power cycling tests with SiC devices.
IRPS
Martina Gerlach, Peter Seidel, Josef Lutz
2020 — conf
Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress.
IRPS
Shanmuganathan Palanisamy, Josef Lutz, Roman Boldyrjew-Mast, Thomas Basler
2018 J jnl
Reliability and reliability investigation of wide-bandgap power devices.
Microelectron. Reliab.
Josef Lutz, Jörg Franke
2018 J jnl
Study on power cycling test with different control strategies.
Microelectron. Reliab.
Guang Zeng, F. Wenisch-Kober, Josef Lutz
2018 J jnl
Unified view on energy and electrical failure of the short-circuit operation of IGBTs.
Microelectron. Reliab.
Roman Baburske, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Riteshkumar Bhojani, J. Kowalsky, Josef Lutz
2016 J jnl
Improving the short circuit ruggedness of IGBTs.
Microelectron. Reliab.
Lukas Tinschert, Magnar Hernes, Josef Lutz
2016 J jnl
Internal processes in power semiconductors at virtual junction temperature measurement.
Microelectron. Reliab.
Weinan Chen, Jörg Franke, Christian Herold, Riteshkumar Bhojani, Josef Lutz
2016 J jnl
Requirements in power cycling for precise lifetime estimation.
Microelectron. Reliab.
Christian Herold, Jörg Franke, Riteshkumar Bhojani, Andre Schleicher, Josef Lutz
2016 J jnl
Topologies for inverter like operation of power cycling tests.
Microelectron. Reliab.
Christian Herold, Peter Seidel, Josef Lutz, Reinhold Bayerer
2015 J jnl
Possible failure modes in Press-Pack IGBTs.
Microelectron. Reliab.
Lukas Tinschert, Atle Rygg Årdal, Tilo Poller, Marco Bohlländer, Magnar Hernes, Josef Lutz
2015 J jnl
Ruggedness of 1200 V SiC MPS diodes.
Microelectron. Reliab.
Susanne Fichtner, Sophia Frankeser, Josef Lutz, Roland Rupp, Thomas Basler, Rolf Gerlach
2014 J jnl
Some aspects on ruggedness of SiC power devices.
Microelectron. Reliab.
Josef Lutz, Roman Baburske
2014 J jnl
Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept.
IET Circuits Devices Syst.
Thomas Basler, M. Pfaffenlehner, Hans Peter Felsl, Franz-Josef Niedernostheide, F. Pfirsch, Hans-Joachim Schulze, Roman Baburske, Josef Lutz
2013 J jnl
Approach of a physically based lifetime model for solder layers in power modules.
Microelectron. Reliab.
P. Steinhorst, Tilo Poller, Josef Lutz
2013 J jnl
Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs.
Microelectron. Reliab.
Tilo Poller, Salvatore D'Arco, Magnar Hernes, Atle Rygg Årdal, Josef Lutz
2012 — conf
A simplified algorithm for predicting power cycling lifetime in Direct Drive wind power systems.
SSD
Salvatore D'Arco, Tore Undeland, Marco Bohlländer, Josef Lutz
2012 J jnl
Dynamic avalanche in bipolar power devices.
Microelectron. Reliab.
Josef Lutz, Roman Baburske
2012 J jnl
Mechanical analysis of press-pack IGBTs.
Microelectron. Reliab.
Tilo Poller, Thomas Basler, Magnar Hernes, Salvatore D'Arco, Josef Lutz
2012 — conf
Surge current capability of IGBTs.
SSD
Thomas Basler, Josef Lutz, Roland Jakob, Thomas Bruckner
2011 J jnl
Thermal impedance spectroscopy of power modules.
Microelectron. Reliab.
A. Hensler, D. Wingert, Christian Herold, Josef Lutz, Markus Thoben
2008 J jnl
Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations.
Microelectron. J.
Birk Heinze, Josef Lutz, Hans Peter Felsl, Hans-Joachim Schulze
2007 J jnl
Influence of parasitic inductances on transient current sharing in parallel connected synchronous rectifiers and Schottky-barrier diodes.
IET Circuits Devices Syst.
D. Polenov, Josef Lutz, Hartmut Pröbstle, Andreas Brösse
2007 J jnl
Thyristors and IGBTs with integrated self-protection functions.
IET Circuits Devices Syst.
Franz-Josef Niedernostheide, Hans-Joachim Schulze, Hans Peter Felsl, Thomas Laska, Ulrich Kellner-Werdehausen, Josef Lutz
2006 J jnl
Compensation and doping effects in heavily helium-radiated silicon for power device applications.
Microelectron. J.
Ralf Siemieniec, Hans-Joachim Schulze, Franz-Josef Niedernostheide, W. Südkamp, Josef Lutz
2004 J jnl
Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes.
Microelectron. J.
Ralf Siemieniec, Josef Lutz
2003 J jnl
Dynamic avalanche and reliability of high voltage diodes.
Microelectron. Reliab.
Josef Lutz, Martin Domeij