Jordi Suñé

20 papers Journal 16Unranked 4
YearRankTypeTitle / Venue / Authors
2025 — conf
Simulation Study of the Maximum Power Dissipation-Energy Consumption Dilemma in Memristors Using the Dynamic Memdiode Model.
SMACD
Enrique Miranda, E. Piros, Fernando L. Aguirre, X. Pérez, T. Kim, J. P. Schreyer, Jonas Gehrunger, T. Oster, Klaus Hofmann, Jordi Suñé, Christian Hochberger, L. Alff
2021 — conf
Line Resistance Impact in Memristor-based Multi Layer Perceptron for Pattern Recognition.
LASCAS
Fernando L. Aguirre, Sebastián Matías Pazos, Felix Palumbo, N. Gomez, Enrique Miranda, Jordi Suñé
2020 J jnl
Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition.
IEEE Access
Fernando Leonel Aguirre, Sebastián Matías Pazos, Felix Palumbo, Jordi Suñé, Enrique Miranda
2018 J jnl
A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory.
Microelectron. Reliab.
Alberto Rodriguez-Fernandez, J. Muñoz-Gorriz, Jordi Suñé, Enrique Miranda
2018 J jnl
SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions.
Int. J. Circuit Theory Appl.
German Agustin Patterson, Jordi Suñé, Enrique Miranda
2017 — conf
Equivalent circuit model for the electron transport in 2D resistive switching material systems.
ESSDERC
Enrique Miranda, Jordi Suñé, Chengbin Pan, Marco A. Villena, Na Xiao, Mario Lanza
2017 J jnl
Identification of the generation/rupture mechanism of filamentary conductive paths in ReRAM devices using oxide failure analysis.
Microelectron. Reliab.
Alberto Rodriguez-Fernandez, Carlo Cagli, Luca Perniola, Jordi Suñé, Enrique Miranda
2017 J jnl
Voltage-Driven Hysteresis Model for Resistive Switching: SPICE Modeling and Circuit Applications.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
German Agustin Patterson, Jordi Suñé, Enrique Miranda
2015 J jnl
Electrical characterization of multiple leakage current paths in HfO
Microelectron. Reliab.
Alberto Rodriguez-Fernandez, M. B. González, Francesca Campabadal, Jordi Suñé, Enrique Miranda
2015 J jnl
Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films.
Microelectron. Reliab.
Juli Blasco, Nestor Fabian Ghenzi, Jordi Suñé, Pablo Levy, Enrique Miranda
2015 — conf
Modeling of the conduction characteristics of voltage-driven bipolar RRAMs including turning point effects.
ESSDERC
Juli Blasco, Jordi Suñé, Enrique Miranda
2014 J jnl
Single-parameter model for the post-breakdown conduction characteristics of HoTiO
Microelectron. Reliab.
Juli Blasco, Helena Castán, Héctor García, Salvador Dueñas, Jordi Suñé, Marianna Kemell, Kaupo Kukli, Mikko Ritala, Markku Leskelä, Enrique Miranda
2013 J jnl
Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress.
Microelectron. Reliab.
X. Saura, D. Moix, Jordi Suñé, Paul K. Hurley, Enrique Miranda
2013 J jnl
Field-effect control of breakdown paths in HfO
Microelectron. Reliab.
X. Saura, X. Lian, David Jiménez, Enrique Miranda, Xavier Borrisé, Francesca Campabadal, Jordi Suñé
2012 J jnl
Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown.
Microelectron. Reliab.
Enrique Miranda, Takamasa Kawanago, Kuniyuki Kakushima, Jordi Suñé, Hiroshi Iwai
2005 J jnl
Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability.
Microelectron. Reliab.
Ernest Y. Wu, Jordi Suñé
2004 J jnl
Electron transport through broken down ultra-thin SiO
Microelectron. Reliab.
Enrique Miranda, Jordi Suñé
2003 J jnl
Critical reliability challenges in scaling SiO
Microelectron. Reliab.
Ernest Y. Wu, Jordi Suñé, Wing L. Lai, Alex Vayshenker, Edward J. Nowak, David L. Harmon
2003 J jnl
Statistics of soft and hard breakdown in thin SiO
Microelectron. Reliab.
Jordi Suñé, Ernest Y. Wu, David Jiménez, Wing L. Lai
2001 J jnl
Study of Electronic Transport in Tunneling Devices Using an Incoherent Superposition of Time Dependent Wave Packets.
VLSI Design
Xavier Oriols, Jordi Suñé