Jong Tae Park

32 papers Journal 32
YearRankTypeTitle / Venue / Authors
2018 J jnl
Effects of the compositional ratios of sputtering target on the device performance and instability in amorphous InGaZnO thin film transistors.
Microelectron. Reliab.
Hee Pyung Park, Sang Woo Kim, Joong-Won Shin, Won-Ju Cho, Jong Tae Park
2017 J jnl
Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layer.
Microelectron. Reliab.
Sang Min Kim, Min-Soo Kang, Won-Ju Cho, Jong Tae Park
2017 J jnl
Reliability of amorphous InGaZnO TFTs with ITO local conducting buried layer for BEOL power transistors.
Microelectron. Reliab.
Hyun Jong Kim, Byung Sang Song, Won-Ju Cho, Jong Tae Park
2016 J jnl
Device instability of amorphous InGaZnO thin film transistors with transparent source and drain.
Microelectron. Reliab.
Sang Min Kim, Min-Ju Ahn, Won-Ju Cho, Jong Tae Park
2016 J jnl
Impact of work function of the silicon bottom-gates on electrical instability in InGaZnO thin film transistors.
Microelectron. Reliab.
Hyun Jun Jang, Chong-Gun Yu, Jong Tae Park
2016 J jnl
Nanowire width dependence of data retention and endurance characteristics in nanowire SONOS flash memory.
Microelectron. Reliab.
Jin Hyung Choi, Chong-Gun Yu, Jong Tae Park
2016 J jnl
Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drain.
Microelectron. Reliab.
Jong Hoon Lee, Seul Ki Yu, Jae Won Kim, Min-Ju Ahn, Won-Ju Cho, Jong Tae Park
2015 J jnl
Effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs.
Microelectron. Reliab.
Jae Hoon Lee, Jin-Woo Han, Chong-Gun Yu, Jong Tae Park
2015 J jnl
Investigation on stress induced hump phenomenon in IGZO thin film transistors under negative bias stress and illumination.
Microelectron. Reliab.
Dae Hyun Kim, Jong Tae Park
2015 J jnl
Wire width dependence of hot carrier degradation in silicon nanowire gate-all-around MOSFETs.
Microelectron. Reliab.
Jin Hyung Choi, Jong Tae Park
2014 J jnl
Crystallographic-orientation-dependent GIDL current in Tri-gate MOSFETs under hot carrier stress.
Microelectron. Reliab.
Jae Hoon Lee, Jong Tae Park
2014 J jnl
Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs.
Microelectron. Reliab.
Jin Hyung Choi, Jin-Woo Han, Chong-Gun Yu, Jong Tae Park
2014 J jnl
The effect of gate overlap on the device degradation in IGZO thin film transistors.
Microelectron. Reliab.
Dae Hyun Kim, Jong Tae Park
2013 J jnl
A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors.
Microelectron. Reliab.
Hyun Jun Jang, Seung Min Lee, Chong-Gun Yu, Jong Tae Park
2013 J jnl
Impact of back gate biases on hot carrier effects in multiple gate junctionless transistors.
Microelectron. Reliab.
Seung Min Lee, Hyun Jun Jang, Jong Tae Park
2012 J jnl
Analysis of edge and corner bonded PSvfBGA reliability under thermal cycling conditions by experimental and finite element methods.
Microelectron. Reliab.
Hongbin Shi, F. X. Che, Cuihua Tian, Rui Zhang, Jong Tae Park, Toshitsugu Ueda
2012 J jnl
Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectrics.
Microelectron. Reliab.
Seul Ki Lee, Sung Il Hong, Yeon Ho Lee, Se Won Lee, Won-Ju Cho, Jong Tae Park
2012 J jnl
Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs.
Microelectron. Reliab.
Seung-Min Lee, Chong-Gun Yu, Seung Min Jeong, Won-Ju Cho, Jong Tae Park
2012 J jnl
Thermo-mechanical reliability optimization of MEMS-based quartz resonator using validated finite element model.
Microelectron. Reliab.
Rui Zhang, Hongbin Shi, Yuehong Dai, Jong Tae Park, Toshitsugu Ueda
2011 J jnl
Concurrent PBTI and hot carrier degradation in n-channel MuGFETs.
Microelectron. Reliab.
Seung Min Lee, Dong Hun Lee, Jae Ki Lee, Jong Tae Park
2011 J jnl
Effects of device layout on the drain breakdown voltages in MuGFETs.
Microelectron. Reliab.
Jin-Young Kim, Chong-Gun Yu, Jong Tae Park
2010 J jnl
NBTI and hot carrier effect of Schottky-barrier p-MOSFETs.
Microelectron. Reliab.
Jin-Young Kim, Jun-Seok Oh, Won-Ju Cho, Jong Tae Park
2010 J jnl
The optimum fin width in p-MuGFETs with the consideration of NBTI and hot carrier degradation.
Microelectron. Reliab.
Dong Wook Kim, Woo Sang Park, Jong Tae Park
2009 J jnl
NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer.
Microelectron. Reliab.
Yong Woo Jeon, Dae Hyun Ka, Chong-Gun Yu, Won-Ju Cho, M. Saif Islam, Jong Tae Park
2009 J jnl
NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs.
Microelectron. Reliab.
Chi-Woo Lee, Isabelle Ferain, Aryan Afzalian, Ran Yan, Nima Dehdashti, Pedram Razavi, Jean-Pierre Colinge, Jong Tae Park
2007 J jnl
Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs.
Microelectron. Reliab.
Sung Jun Jang, Dae Hyun Ka, Chong-Gun Yu, Kwan-Su Kim, Won-Ju Cho, Jong Tae Park
2006 J jnl
New experimental findings on hot-carrier-induced degradation in lateral DMOS transistors.
Microelectron. Reliab.
In Kyung Lee, Se Re Na Yun, Kyosun Kim, Chong-Gun Yu, Jong Tae Park
2005 J jnl
Reliability improvement by the suppression of keyhole generation in W-plug vias.
Microelectron. Reliab.
Jong Hun Kim, Kyosun Kim, Seok Hee Jeon, Jong Tae Park
2004 J jnl
Effects of hot carrier stress on the RF performance in SOI MOSFETs.
Microelectron. Reliab.
Byung-jin Lee, Kyosun Kim, Jong Tae Park
2004 J jnl
Reduced Hot Carrier Effects in Self-Aligned Ground-Plane FDSOI MOSFET's.
Microelectron. Reliab.
Se Re Na Yun, Chong-Gun Yu, Seok Hee Jeon, Chungkyue Kim, Jong Tae Park, Jean-Pierre Colinge
2003 J jnl
Hot electron induced punchthrough voltage of p-channel SOI MOSFET's at room and elevated temperatures.
Microelectron. Reliab.
Se Re Na Yun, Won Sub Park, Byung Ha Lee, Jong Tae Park
2003 J jnl
Increased hot carrier effects in Gate-All-Around SOI nMOSFET's.
Microelectron. Reliab.
Jong Tae Park, Nag Jong Choi, Chong-Gun Yu, Seok Hee Jeon, Jean-Pierre Colinge