Joachim Würfl

20 papers Journal 16Unranked 4
YearRankTypeTitle / Venue / Authors
2022 J jnl
Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications.
IEEE Access
Yi-Fan Tsao, Heng-Shou Hsu, Joachim Würfl, Heng-Tung Hsu
2021 — conf
GaN-channel HEMTs with AlN buffer for high-voltage switching.
DRC
Oliver Hilt, Frank Brunner, Eldad Bahat-Treidel, Mihaela Wolf, Joachim Würfl
2020 — conf
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications.
DRC
Eldad Bahat-Treidel, Oliver Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, Joachim Würfl
2018 — conf
Design and Development of Gallium Nitride HEMTs Based Liquid Sensor.
IEEE SENSORS
Nidhi Chaturvedi, Richard Lossy, Kuldip Singh, Dheeraj K. Kharbanda, Shivanshu Mishra, Ashok Chauhan, Kaushal Kishore, Pramod K. Khanna, Joachim Würfl
2016 J jnl
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.
Microelectron. Reliab.
Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale
2016 J jnl
Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs.
Microelectron. Reliab.
Eldad Bahat-Treidel, Oliver Hilt, O. Bahat Treidel, Joachim Würfl
2015 — conf
E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator.
ESSDERC
Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl
2015 J jnl
High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications.
Microelectron. Reliab.
Clément Fleury, Mattia Capriotti, Matteo Rigato, Oliver Hilt, Joachim Würfl, Joff Derluyn, Stephan Steinhauer, Anton Köck, Gottfried Strasser, Dionyz Pogany
2014 J jnl
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors.
Microelectron. Reliab.
Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl
2014 J jnl
New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery.
Microelectron. Reliab.
Ponky Ivo, Eunjung Melanie Cho, Przemyslaw Kotara, Lars Schellhase, Richard Lossy, Ute Zeimer, Anna Mogilatenko, Joachim Würfl, Günther Tränkle, Arkadiusz Glowacki, Christian Boit
2013 J jnl
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications.
Microelectron. Reliab.
Clément Fleury, Rimma Zhytnytska, Sergey Bychikhin, Mattia Capriotti, Oliver Hilt, Domenica Visalli, Gaudenzio Meneghesso, Enrico Zanoni, Joachim Würfl, Joff Derluyn, Gottfried Strasser, Dionyz Pogany
2012 J jnl
Reliability studies on GaN HEMTs with sputtered Iridium gate module.
Microelectron. Reliab.
Richard Lossy, Hervé Blanck, Joachim Würfl
2012 J jnl
Single- and double-heterostructure GaN-HEMTs devices for power switching applications.
Microelectron. Reliab.
Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso
2011 J jnl
Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements.
Microelectron. Reliab.
Ponky Ivo, Arkadiusz Glowacki, Eldad Bahat-Treidel, Richard Lossy, Joachim Würfl, Christian Boit, Günther Tränkle
2011 J jnl
Reliability issues of GaN based high voltage power devices.
Microelectron. Reliab.
Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, Matthias Schulz, S. Singwald, Markus Weyers, Rimma Zhytnytska
2010 J jnl
Determination of GaN HEMT reliability by monitoring I
Microelectron. Reliab.
Reza Pazirandeh, Joachim Würfl, Günther Tränkle
2009 J jnl
Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures.
Microelectron. Reliab.
Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle
2004 J jnl
Reliability Investigation of Gallium Nitride HEMT.
Microelectron. Reliab.
A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, V. Hoel, Sylvain L. Delage, N. Chaturvedi, Richard Lossy, Joachim Würfl
2003 J jnl
Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE.
Microelectron. Reliab.
Frank Brunner, A. Braun, Paul Kurpas, J. Schneider, Joachim Würfl, Markus Weyers
2001 J jnl
Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing.
Microelectron. Reliab.
Joachim Würfl, Paul Kurpas, Frank Brunner, Michael Mai, Matthias Rudolph, Markus Weyers