Jinshun Bi

19 papers Journal 16Unranked 3
YearRankTypeTitle / Venue / Authors
2023 — conf
Nanoscale Air Channel Devices for Emerging IC Applications.
ICICDT
Jinshun Bi
2022 J jnl
Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions.
Sci. China Inf. Sci.
Xueqin Yang, Yannan Xu, Jinshun Bi, Kai Xi, Linjie Fan, Lanlong Ji, Gaobo Xu
2022 J jnl
Ultrathin HfO
Neuromorph. Comput. Eng.
Qiang Wang, Yankun Wang, Ren Luo, Jianjian Wang, Lanlong Ji, Zhuangde Jiang, Christian Wenger, Zhitang Song, Sannian Song, Wei Ren, Jinshun Bi, Gang Niu
2021 J jnl
Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design.
Sci. China Inf. Sci.
Jianjian Wang, Jinshun Bi, Gang Liu, Hua Bai, Kai Xi, Bo Li, Sandip Majumdar, Lanlong Ji, Ming Liu, Zhangang Zhang
2020 J jnl
Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations.
Sensors
Linjie Fan, Jinshun Bi, Kai Xi, Gangping Yan
2020 J jnl
Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations.
Sensors
Linjie Fan, Jinshun Bi, Kai Xi, Sandip Majumdar, Bo Li
2020 J jnl
Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.
IEEE Access
Gangping Yan, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Linjie Fan, Huaxiang Yin
2020 J jnl
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors.
Sci. China Inf. Sci.
Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang
2019 — conf
Radiation effects of floating-gate (FG) and charge-trapping (CT) Flash memory technologies.
ICICDT
Jinshun Bi
2019 J jnl
Total ionizing dose effects on graphene-based charge-trapping memory.
Sci. China Inf. Sci.
Kai Xi, Jinshun Bi, Sandip Majumdar, Bo Li, Jing Liu, Yannan Xu, Ming Liu
2018 J jnl
A single event upset tolerant latch design.
Microelectron. Reliab.
Haibin Wang, Xixi Dai, Yangsheng Wang, Issam Nofal, Li Cai, Zicai Shen, Wanxiu Sun, Jinshun Bi, Bo Li, Gang Guo, Li Chen, Sang H. Baeg
2018 J jnl
The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices.
Microelectron. Reliab.
Teng Zhang, Bruno Allard, Jinshun Bi
2018 J jnl
Total ionizing dose and single event effects of 1 Mb HfO
Microelectron. Reliab.
Jinshun Bi, Yuan Duan, Kai Xi, Bo Li
2017 — conf
A 130nm 1Mb HfOx embedded RRAM macro using self-adaptive peripheral circuit system techniques for 1.6X work temperature range.
A-SSCC
Feng Zhang, Dongyu Fan, Yuan Duan, Jin Li, Cong Fang, Yun Li, Xiaowei Han, Lan Dai, Cheng-Ying Chen, Jinshun Bi, Ming Liu, Meng-Fan Chang
2017 J jnl
SEU reduction effectiveness of common centroid layout in differential latch at 130-nm CMOS technology.
Microelectron. Reliab.
Haibin Wang, Ao Sheng, Shiqi Wang, Jinshun Bi, Li Chen, Xiaofeng Liu
2017 J jnl
Total ionizing dose effects and annealing behaviors of HfO
Sci. China Inf. Sci.
Yannan Xu, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Ming Liu
2016 J jnl
Study of total ionizing dose induced read bit errors in magneto-resistive random access memory.
Microelectron. Reliab.
Haohao Zhang, Jinshun Bi, Haibin Wang, Hongyang Hu, Jin Li, Lanlong Ji, Ming Liu
2015 J jnl
A Novel Built-in Current Sensor for N-WELL SET Detection.
J. Electron. Test.
Haibin Wang, Rui Liu, Li Chen, Jinshun Bi, Mulong Li, Yuanqing Li
2014 J jnl
Single Event Resilient Dynamic Logic Designs.
J. Electron. Test.
Haibin Wang, Mulong Li, Li Chen, Rui Liu, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Rita Fung, Jinshun Bi