Jing Zhu

11 papers Journal 9Unranked 2
YearRankTypeTitle / Venue / Authors
2024 J jnl
A 200-V Half-Bridge Monolithic GaN Power IC With High-Speed Level Shifter and dV
IEEE Trans. Very Large Scale Integr. Syst.
Yifei Zheng, Boyu Li, Qianheng Dong, Yutao Ying, Deyuan Song, Jing Zhu, Weifeng Sun, Qinsong Qian, Long Zhang, Sheng Li, Denggui Wang, Jianjun Zhou
2023 J jnl
A 400-V Half Bridge Gate Driver for Normally-Off GaN HEMTs With Effective Dv/Dt Control and High Dv/Dt Immunity.
IEEE Trans. Ind. Electron.
Siyuan Yu, Qi Zhou, Gang Shi, Tianyang Wu, Jing Zhu, Long Zhang, Weifeng Sun, Sen Zhang, Nailong He, Ye Li
2021 — conf
33.2 A 600V GaN Active Gate Driver with Dynamic Feedback Delay Compensation Technique Achieving 22.5% Turn-On Energy Saving.
ISSCC
Jing Zhu, Ding Yan, Siyuan Yu, Weifeng Sun, Gang Shi, Siyang Liu, Sen Zhang
2021 J jnl
Device and Circuit Design for Improving the Freewheeling Characteristics of High Voltage Monolithic Integrated Circuit.
IEEE Trans. Ind. Electron.
Jing Zhu, Siyuan Yu, Guichuang Zhu, Weifeng Sun, Yunqi Wang, Yangyang Lu, Yunwu Zhang, Sen Zhang, Yan Gu, Nailong He
2021 J jnl
Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices.
IEEE Trans. Ind. Electron.
Jing Zhu, Siyuan Yu, Yangyang Lu, Weifeng Sun, Chuanyi Cheng, Ding Yan, Yunwu Zhang, Shaohong Li, Long Zhang, Sen Zhang, Nailong He, Yan Gu
2018 J jnl
Noise Immunity and its Temperature Characteristics Study of the Capacitive-Loaded Level Shift Circuit for High Voltage Gate Drive IC.
IEEE Trans. Ind. Electron.
Jing Zhu, Yunwu Zhang, Weifeng Sun, Yangyang Lu, Longxing Shi, Yan Gu, Sen Zhang
2016 J jnl
Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot.
IET Circuits Devices Syst.
Jing Zhu, Yunwu Zhang, Weifeng Sun, Yangyang Lu, Yicheng Du, Yangbo Yi
2014 J jnl
Low-jitter, high-linearity current-controlled complementary metal oxide semiconductor relaxation oscillator with optimised floating capacitors.
IET Circuits Devices Syst.
Jing Zhu, Yunwu Zhang, Weifeng Sun, Yangbo Yi
2014 J jnl
Robust 600 V high-voltage gate drive IC with low-temperature coefficient propagation delay time.
IET Circuits Devices Syst.
Jian Chen, Jing Zhu, Guodong Sun, Weifeng Sun, Weinan Dai, Zexiang Huang
2013 — conf
A novel Operational Transconductance Amplifier with high Gm using improved differential current redistribution technique (DCRT).
ASICON
Jing Zhu, Yunwu Zhang, Weifeng Sun, Shengli Lu
2010 J jnl
Investigation of the shift of hot spot in lateral diffused LDMOS under ESD conditions.
Microelectron. Reliab.
Qinsong Qian, Weifeng Sun, Jing Zhu, Longxing Shi