Jing-Ping Xu

14 papers Journal 14
YearRankTypeTitle / Venue / Authors
2016 J jnl
A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric.
Microelectron. Reliab.
Feng Ji, Jing-Ping Xu, Lu Liu, Wing Man Tang, Pui To Lai
2016 J jnl
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH
Microelectron. Reliab.
Han-Han Lu, Jing-Ping Xu, Lu Liu, Li-Sheng Wang, Pui To Lai, Wing Man Tang
2015 J jnl
A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric.
Microelectron. Reliab.
Y. Huang, Jing-Ping Xu, L. S. Wang, S. Y. Zhu
2014 J jnl
Improved performance by using TaON/SiO
Microelectron. Reliab.
J. X. Chen, Jing-Ping Xu, Lu Liu, X. D. Huang, Pui To Lai
2010 J jnl
A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode.
Microelectron. Reliab.
Jing-Ping Xu, X. Xiao, Pui-To Lai
2009 J jnl
A study on the improved programming characteristics of flash memory with Si
Microelectron. Reliab.
Lu Liu, Jing-Ping Xu, L. L. Chen, Pui To Lai
2008 J jnl
A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects.
Microelectron. Reliab.
Jing-Ping Xu, Y. P. Li, Pui-To Lai, W. B. Chen, S. G. Xu, J. G. Guan
2008 J jnl
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric.
Microelectron. Reliab.
F. Ji, Jing-Ping Xu, Pui-To Lai, J. G. Guan
2008 J jnl
Effects of Ti content and wet-N
Microelectron. Reliab.
C. X. Li, X. Zou, Pui-To Lai, Jing-Ping Xu, C. L. Chan
2008 J jnl
Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric.
Microelectron. Reliab.
Jing-Ping Xu, F. Ji, Pui-To Lai, J. G. Guan
2007 J jnl
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer.
Microelectron. Reliab.
X. Zou, Jing-Ping Xu, C. X. Li, Pui-To Lai, W. B. Chen
2007 J jnl
Gate leakage properties of MOS devices with tri-layer high-k gate dielectric.
Microelectron. Reliab.
W. B. Chen, Jing-Ping Xu, Pui-To Lai, Y. P. Li, S. G. Xu
2004 J jnl
Interfacial properties and reliability of SiO
Microelectron. Reliab.
Pui-To Lai, Jing-Ping Xu, H. P. Wu, C. L. Chan
2003 J jnl
Enhanced reliability for low-temperature gate dielectric of MOS devices by N
Microelectron. Reliab.
David C. T. Or, Pui-To Lai, Johnny K. O. Sin, Paul C. K. Kwok, Jing-Ping Xu