Jin He

27 papers Journal 15Unranked 12
YearRankTypeTitle / Venue / Authors
2023 J jnl
Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review.
IEEE Access
Laixiang Qin, Chunlai Li, Yiqun Wei, Guoqing Hu, Jingbiao Chen, Yi Li, Caixia Du, Zhangwei Xu, Xiumei Wang, Jin He
2020 J jnl
Synthesis Design of Equal-Ripple and Quasi-Elliptic Wideband BPFs With Independently Reconfigurable Lower Passband Edge.
IEEE Access
Xiao-Meng Wang, Xiao-Kun Bi, Shao-Hua Guo, Jin He, Chun-Lai Li, Jingjing Liu, Guo-Qing Hu, Guang-Jin Ma, Zhongting Xu
2019 — conf
A Passive Optical Transmitter Using LC Switches for IoT Smart Dusts.
CCECE
Jingjing Liu, Riqing Chen, Yuan Ren, Zhongting Xu, Guoqing Hu, Jun Pan, Chunlai Li, Jin He
2017 J jnl
A 140-mV Variation-Tolerant Deep Sub-Threshold SRAM in 65-nm CMOS.
IEEE J. Solid State Circuits
Khawar Sarfraz, Jin He, Mansun Chan
2013 J jnl
Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions.
IEICE Trans. Electron.
Chenyue Ma, Hans Jürgen Mattausch, Masataka Miyake, Takahiro Iizuka, Kazuya Matsuzawa, Seiichiro Yamaguchi, Teruhiko Hoshida, Akinori Kinoshita, Takahiko Arakawa, Jin He, Mitiko Miura-Mattausch
2012 — conf
A MATLAB program for Volterra distortion analysis in CMOS switched source follower.
APCCAS
Hailang Liang, Jin He, Cheng Wang, Xiaoan Zhu, Mansun Chan
2012 J jnl
A physical design tool for carbon nanotube field-effect transistor circuits.
ACM J. Emerg. Technol. Comput. Syst.
Jiale Huang, Minhao Zhu, Shengqi Yang, Pallav Gupta, Wei Zhang, Steven M. Rubin, Gilda Garretón, Jin He
2011 — conf
A new nonlinear parameterized model order reduction technique combining the interpolation method and Proper Orthogonal Decomposition.
ASICON
Zhiyu Xu, Xinnan Lin, Hao Zhuang, Bo Jiang, Haijun Lou, Jin He
2011 J jnl
A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection.
Microelectron. Reliab.
Chenyue Ma, Lining Zhang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang
2011 J jnl
Terahertz spectroscopic uncertainty analysis for explosive mixture components determination using multi-objective micro-genetic algorithm.
Adv. Eng. Softw.
Yi Chen, Yong Ma, Zheng Lu, Lixia Qiu, Jin He
2010 J jnl
A High Power Switch-Mode LED Driver with an Efficient Current Sensing Scheme.
J. Low Power Electron.
Wing Yan Leung, Tsz Yin Man, Dongwei Zhang, Jin He, Mansun Chan
2010 J jnl
Charge-based model for symmetric double-gate MOSFETs with inclusion of channel doping effect.
Microelectron. Reliab.
Lining Zhang, Jian Zhang, Yan Song, Xinnan Lin, Jin He, Mansun Chan
2010 J jnl
Temperature dependence of the interface state distribution due to hot carrier effect in FinFET device.
Microelectron. Reliab.
Chenyue Ma, Hao Wang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang
2009 — conf
A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability.
ISQED
Chenyue Ma, Bo Li, Lining Zhang, Jin He, Xing Zhang, Xinnan Lin, Mansun Chan
2009 — conf
An analytic model for Ge/Si core/shell nanowire MOSFETs considering drift-diffusion and ballistic transport.
ISQED
Lining Zhang, Jin He, Jian Zhang, Feng Liu, Yue Fu, Yan Song, Xing Zhang
2009 J jnl
Sub-threshold behavior of long channel undoped cylindrical surrounding-gate MOSFETs.
Microelectron. Reliab.
Wei Bian, Jin He, Lining Zhang, Jian Zhang, Mansun Chan
2008 — conf
Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes.
ISQED
Feng Liu, Jin He, Yue Fu, Jinhua Hu, Wei Bian, Yan Song, Xing Zhang, Mansun Chan
2008 — conf
Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure.
ISQED
Yue Fu, Jin He, Feng Liu, Jie Feng, Chenyue Ma, Lining Zhang
2006 — conf
A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs.
ISQED
Jin He, Xing Zhang, Ganggang Zhang, Yangyuan Wang
2006 — conf
A Complete Carrier-Based Non-Charge-Sheet Analytic Theory for Nano-Scale Undoped Surrounding-Gate MOSFETs.
ISQED
Jin He, Xing Zhang, Ganggang Zhang, Mansun Chan, Yangyuan Wang
2005 — conf
Charge-Based Core and the Model Architecture of BSIM5.
ISQED
Jin He, Jane Xi, Mansun Chan, Hui Wan, Mohan V. Dunga, Babak Heydari, Ali M. Niknejad, Chenming Hu
2004 — conf
A Non-Charge-Sheet Based Analytical Model of Undoped Symmetric Double-Gate MOSFETs Using SPP Approach.
ISQED
Jin He, Xuemei Xi, Mansun Chan, Chung-Hsun Lin, Ali Niknejad, Chenming Hu
2004 — conf
The next generation BSIM for sub-100nm mixed-signal circuit simulation.
CICC
Xuemei Xi, Jin He, Mohan V. Dunga, Chung-Hsun Lin, Babak Heydari, Hui Wan, Mansun Chan, Ali M. Niknejad, Chenming Hu
2003 J jnl
Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET's (n-DTMOSFET) measured by gated-diode configuration.
Microelectron. Reliab.
Ru Huang, Jinyan Wang, Jin He, Min Yu, Xing Zhang, Yangyuan Wang
2003 J jnl
Practical compact modeling approaches and options for sub-0.1 mum CMOS technologies.
Microelectron. Reliab.
Mansun Chan, Xuemei Xi, Jin He, Kanyu M. Cao, Mohan V. Dunga, Ali M. Niknejad, Ping K. Ko, Chenming Hu
2002 J jnl
Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOI NMOSFETs.
Microelectron. Reliab.
Jin He, Xing Zhang, Ru Huang, Yangyuan Wang
2001 J jnl
Extraction of the lateral distribution of interface traps in MOSFETs by a novel combined gated-diode technique.
Microelectron. Reliab.
Jin He, Xing Zhang, Ru Huang, Yangyuan Wang