Jiezhi Chen

40 papers A 1B 2Misc 1Journal 24Unranked 12
YearRankTypeTitle / Venue / Authors
2026 J jnl
High-Speed True Random Number Generator With Multiple Entropy Sources: Ring Oscillator Jitter and Random Telegraph Noise.
IEEE Embed. Syst. Lett.
Yizhi Liu, Yifan Wu, Bo Chen, Pengpeng Sang, Jixuan Wu, Xiangye Wei, Xuepeng Zhan, Jiezhi Chen
2026 J jnl
Universal content-addressable memory with high-endurance flash for functionally complete logic-in-memory computing.
Sci. China Inf. Sci.
Xinyi Guo, Yang Feng, Peng Guo, Shaoqi Yang, Xiaohuan Zhao, Guangkuo Yang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen
2025 J jnl
A Measurement Study of Model Context Protocol.
CoRR
Hechuan Guo, Yongle Hao, Yue Zhang, Minghui Xu, Peizhuo Lyu, Jiezhi Chen, Xiuzhen Cheng
2025 J jnl
An Efficient Flash-Based Computing-in-Memory (CIM) Demonstration of High-Precision (32-bit) Nonlinear Partial Differential Equation (PDE) Solver With Ultra-High Endurance and Reliability.
IEEE Trans. Circuits Syst. I Regul. Pap.
Yang Feng, Zhaohui Sun, Chengcheng Wang, Xinyi Guo, Junyao Mei, Yueran Qi, Jing Liu, Junyu Zhang, Jixuan Wu, Xuepeng Zhan, Peng Huang, Jiezhi Chen
2025 J jnl
Co-optimization of ferroelectric gate stacks on operation voltage and memory window for next-generation NAND flash.
Sci. China Inf. Sci.
Bo Chen, Yizhi Liu, Yifan Wu, Pengpeng Sang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen
2025 J jnl
Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges.
Sci. China Inf. Sci.
Xiao Yu, Ni Zhong, Yan Cheng, Tianjiao Xin, Qing Luo, Tiancheng Gong, Jiezhi Chen, Jixuan Wu, Ran Cheng, Zhiyuan Fu, Kechao Tang, Jin Luo, Tianling Ren, Fei Xue, Lin Chen, Tianyu Wang, Xueqing Li, Xiuyan Li, Ping Wang, Xinqiang Wang, Jie Sun, Anquan Jiang, Peiyuan Du, Bing Chen, Chengji Jin, Jiajia Chen, Haoji Qian, Wei Mao, Siying Zheng, Huan Liu, Haiwen Xu, Can Liu, Zhihao Shen, Xiaoxi Li, Bochang Li, Zheng-Dong Luo, Jiuren Zhou, Yan Liu, Yue Hao, Genquan Han
2025 J jnl
High-Precision Error Bit Prediction for 3D QLC NAND Flash Memory: Observations, Analysis, and Modeling.
IEEE Trans. Computers
Guangkuo Yang, Meng Zhang, Peng Guo, Xuepeng Zhan, Shaoqi Yang, Xiaohuan Zhao, Xinyi Guo, Pengpeng Sang, Jixuan Wu, Fei Wu, Jiezhi Chen
2025 J jnl
Retention Accelerated Testing for 3-D QLC nand Flash Memory: Characterization, Analysis, and Modeling.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Shaoqi Yang, Meng Zhang, Xuepeng Zhan, Peng Guo, Xiaohuan Zhao, Guangkuo Yang, Xinyi Guo, Jixuan Wu, Fei Wu, Jiezhi Chen
2025 J jnl
Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1-xO2 ferroelectric film.
Sci. China Inf. Sci.
Xiaopeng Li, Lu Tai, Xiaoyu Dou, Yang Feng, Dong Zhang, Xuepeng Zhan, Jixuan Wu, Xiao Gong, Jiezhi Chen
2024 J jnl
A 3D MCAM architecture based on flash memory enabling binary neural network computing for edge AI.
Sci. China Inf. Sci.
Maoying Bai, Shuhao Wu, Hai Wang, Hua Wang, Yang Feng, Yueran Qi, Chengcheng Wang, Zheng Chai, Tai Min, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen
2024 — conf
First Demonstration of BEOL-Compatible 3D Vertical FeNOR.
VLSI Technology and Circuits
Yang Feng, Dong Zhang, Chen Sun, Zijie Zheng, Yue Chen, Qiwen Kong, Gan Liu, Yuye Kang, Kaizhen Han, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong
2024 J jnl
Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities.
CoRR
Yang Feng, Zhaohui Sun, Chengcheng Wang, Xinyi Guo, Junyao Mei, Yueran Qi, Jing Liu, Junyu Zhang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen
2024 — conf
Unveiling Cryogenic Performance (4 to 300 K) Towards Ultra-Thin Ferroelectric HZO: Novel Kinetic Barrier Engineering and Underlying Mechanism.
VLSI Technology and Circuits
Dong Zhang, Yang Feng, Zijie Zheng, Chen Sun, Qiwen Kong, Gan Liu, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong
2023 J jnl
Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing.
Microelectron. J.
Shuhao Wu, Bo Chen, Chengcheng Wang, Junyao Mei, Maoying Bai, Xuepeng Zhan, Jixuan Wu, Junshuai Chai, Hao Xu, Xiaolei Wang, Jiezhi Chen
2023 — conf
Error Bits Recovering in 3D NAND Flash Memory: A Novel State-Shift Re-Program (SRP) Scheme.
ICTA
Xiaohuan Zhao, Shaoqi Yang, Kenie Xie, Yang Feng, Qianwen Wang, Pengpeng Sang, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen
2023 — conf
Flash-based Computing-in-memory Architectures with High-accuracy and Robust Reliabilities for General-purpose Applications.
ASICON
Yang Feng, Yueran Qi, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen
2023 — conf
Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding.
VLSI Technology and Circuits
Dong Zhang, Jixuan Wu, Qiwen Kong, Zuopu Zhou, Long Liu, Kaizhen Han, Chen Sun, Xiaolin Wang, Gan Liu, Leming Jiao, Zijie Zheng, Yuye Kang, Jiezhi Chen, Xiao Gong
2023 J jnl
High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory as Hot-Data Storage.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Xiaotong Fang, Meng Zhang, Yifan Guo, Fei Chen, Binglu Chen, Xuepeng Zhan, Jixuan Wu, Fei Wu, Jiezhi Chen
2023 J jnl
Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing.
Sci. China Inf. Sci.
Yang Feng, Bing Chen, Mingfeng Tang, Yuerang Qi, Maoying Bai, Chengcheng Wang, Hai Wang, Xuepeng Zhan, Junyu Zhang, Jing Liu, Jixuan Wu, Jiezhi Chen
2023 — conf
One-shot Read Processing to Enhance Cold Data Retention in Charge-trap TLC 3D NAND Flash.
ASICON
Shaoqi Yang, Xiaohuan Zhao, Kenie Xie, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen
2023 — conf
Opto-Electronic Monolayer ZnO Memristor Produced via Low Temperature Atomic Layer Deposition.
ICTA
Junyao Mei, Bo Chen, Pengpeng Sang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen
2023 — conf
Simulation for the Feasibility of IGZO Channel in 3D Vertical FeFET Memory Based on TCAD.
ICTA
Zhichao Du, Chuanxue Sun, Xiaoyu Dou, Pengpeng Sang, Xuepeng Zhan, Chengji Jin, Jixuan Wu, Jiezhi Chen
2022 J jnl
Experimentally-Validated Crossbar Model for Defect-Aware Training of Neural Networks.
IEEE Trans. Circuits Syst. II Express Briefs
Ruibin Mao, Bo Wen, Mingrui Jiang, Jiezhi Chen, Can Li
2022 J jnl
Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors.
Sci. China Inf. Sci.
Xuepeng Zhan, Jiezhi Chen, Zhigang Ji
2022 — conf
Large Suppression to Lateral Charge Migration (LCM) Related Error Bits in Charge-Trap TLC 3D NAND Flash.
ICTA
Kenie Xie, Pena Guo, Fei Chen, Binglu Chen, Xiaotong Fang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen
2022 J jnl
Long Time-Series Mapping and Change Detection of Coastal Zone Land Use Based on Google Earth Engine and Multi-Source Data Fusion.
Remote. Sens.
Dong Chen, Yafei Wang, Zhenyu Shen, Jinfeng Liao, Jiezhi Chen, Shaobo Sun
2022 J jnl
Optimal Program-Read Schemes Toward Highly Reliable Open Block Operations in 3-D Charge-Trap NAND Flash Memory.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Menghua Jia, Yachen Kong, Xuepeng Zhan, Meng Zhang, Fei Wu, Jiezhi Chen
2022 A conf
Re-LSM: A ReRAM-Based Processing-in-Memory Framework for LSM-Based Key-Value Store.
ICCAD
Qian Wei, Zhaoyan Shen, Yiheng Tong, Zhiping Jia, Lei Ju, Jiezhi Chen, Bingzhe Li
2022 J jnl
Spatiotemporal Pattern Analysis of Land Use Functions in Contiguous Coastal Cities Based on Long-Term Time Series Remote Sensing Data: A Case Study of Bohai Sea Region, China.
Remote. Sens.
Yuxuan Ye, Yafei Wang, Jinfeng Liao, Jiezhi Chen, Yangfan Zou, Yuan Liu, Chunye Feng
2022 J jnl
Voltage and temperature dependence of Random Telegraph Noise and their impacts on random number generator.
Microelectron. J.
Mingtao Xu, Bo Chen, Qi Jin, Lu Tai, Xuepeng Zhan, Jiezhi Chen
2022 Misc conf
Work-in-Progress: High-Precision Short-Term Lifetime Prediction in TLC 3D NAND Flash Memory as Hot-data Storage.
CASES
Xiaotong Fang, Meng Zhang, Yifan Guo, Fei Chen, Binglu Chen, Xuepeng Zhan, Jixuan Wu, Fei Wu, Jiezhi Chen
2021 — conf
Bits Mapping in Triple-level-cell (TLC) Charge-trap (CT) 3D NAND Flash Memory and its Applications to IoT Security.
ICTA
Yifang Xi, Xiaotong Fang, Yachen Kong, Yifan Guo, Hongzhe Lin, Xuepeng Zhan, Jiezhi Chen
2021 J jnl
Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory.
IEEE Access
Fei Wang, Yuan Li, Xiaolei Ma, Jiezhi Chen
2021 J jnl
Flash memory based computing-in-memory system to solve partial differential equations.
Sci. China Inf. Sci.
Yang Feng, Fei Wang, Xuepeng Zhan, Yuan Li, Jiezhi Chen
2020 J jnl
Dual-Point Technique for Multi-Trap RTN Signal Extraction.
IEEE Access
Xuepeng Zhan, Yifang Xi, Qianwen Wang, Weiqiang Zhang, Zhigang Ji, Jiezhi Chen
2020 J jnl
Retention Correlated Read Disturb Errors in 3-D Charge Trap NAND Flash Memory: Observations, Analysis, and Solutions.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Yachen Kong, Meng Zhang, Xuepeng Zhan, Rui Cao, Jiezhi Chen
2019 — conf
Program/Erase Cycling Enhanced Lateral Charge Diffusion in Triple-Level Cell Charge-Trapping 3D NAND Flash Memory.
IRPS
Rui Cao, Jixuan Wu, Wenjing Yang, Jiezhi Chen, Xiangwei Jiang
2019 — conf
Scaling Behaviour of State-to-State Coupling During Hole Trapping at Si/SiO2.
IRPS
Xiaolei Ma, Xiangwei Jiang, Jiezhi Chen, Liwei Wang, Yunfei En
2011 B conf
An Artificial Intelligence Approach to Price Design for Improving AQM Performance.
GLOBECOM
Hao Wang, Jiezhi Chen, Chenda Liao, Zuohua Tian
2011 B conf
Design and analysis of effective price for congestion control.
LCN
Hao Wang, Bo Wang, Jiezhi Chen, Zuohua Tian