Jianfu Zhang

15 papers Journal 9Unranked 6
YearRankTypeTitle / Venue / Authors
2023 J jnl
A Pragmatic Model to Predict Future Device Aging.
IEEE Access
James Brown, Kean Hong Tok, Rui Gao, Zhigang Ji, Weidong Zhang, John S. Marsland, Thomas Chiarella, Jacopo Franco, Ben Kaczer, Dimitri Linten, Jianfu Zhang
2023 J jnl
Equiprobability-Based Local Response Surface Method for High-Sigma Yield Estimation With Both High Accuracy and Efficiency.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Xiang Liu, Pengpeng Ren, Hai-Bao Chen, Zhigang Ji, Junhua Liu, Runsheng Wang, Jianfu Zhang, Ru Huang
2021 J jnl
Investigation on the Implementation of Stateful Minority Logic for Future In-Memory Computing.
IEEE Access
Chunyang Liu, Pengpeng Ren, Bo Zhou, Jianfu Zhang, Hui Fang, Zhigang Ji
2021 J jnl
On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude.
IEEE Access
Mehzabeen Mehedi, Kean Hong Tok, Zengliang Ye, Jianfu Zhang, Zhigang Ji, Weidong Zhang, John S. Marsland
2021 — conf
Understanding Generated RTN as an Entropy Source for True Random Number Generators.
ICICDT
Zhigang Ji, Jianfu Zhang
2020 — conf
A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs.
IRPS
Rui Gao, Mehzabeen Mehedi, Haibao Chen, Xinsheng Wang, Jianfu Zhang, Xiaoling Lin, Zhiyuan He, Yiqiang Chen, Dengyun Lei, Yun Huang, Yunfei En, Zhigang Ji, Runsheng Wang
2020 J jnl
An Assessment of the Statistical Distribution of Random Telegraph Noise Time Constants.
IEEE Access
Mehzabeen Mehedi, Kean Hong Tok, Jianfu Zhang, Zhigang Ji, Zengliang Ye, Weidong Zhang, John S. Marsland
2019 — conf
An assessment of RTN-induced threshold voltage jitter.
ASICON
Jianfu Zhang, Azrif Manut, Rui Gao, Mehzabeen Mehedi, Zhigang Ji, Weidong Zhang, John S. Marsland
2018 J jnl
As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction.
Microelectron. Reliab.
Jianfu Zhang, Zhigang Ji, Wei Dong Zhang
2017 — conf
Hot carrier aging of nano-scale devices: Characterization method, statistical variation, and their impact on use voltage.
ASICON
Jianfu Zhang, Meng Duan, Zhigang Ji, Weidong Zhang
2015 — conf
ESD characterization of planar InGaAs devices.
IRPS
Zhigang Ji, Dimitri Linten, Roman Boschke, Geert Hellings, S. H. Chen, AliReza Alian, D. Zhou, Yves Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, Jianfu Zhang, Weidong Zhang, Nadine Collaert, Guido Groeseneken
2015 — conf
NBTI prediction and its induced time dependent variation.
ASICON
Jianfu Zhang, Meng Duan, Zhigang Ji, Weidong Zhang
2014 J jnl
Energy distribution of positive charges in high-k dielectric.
Microelectron. Reliab.
Sharifah Wan Muhamad Hatta, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Norhayati Soin, Ben Kaczer, Stefan De Gendt, Guido Groeseneken
2014 J jnl
Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations.
Microelectron. Reliab.
Baojun Tang, Weidong Zhang, Laurent Breuil, Colin Robinson, Yunqi Wang, Maria Toledano-Luque, Geert Van den Bosch, Jianfu Zhang, Jan Van Houdt
2010 J jnl
NBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process variations.
Microelectron. Reliab.
Sharifah Wan Muhamad Hatta, Norhayati Soin, D. Abd Hadi, Jianfu Zhang