Jean-Luc Ogier

14 papers Journal 12Unranked 2
YearRankTypeTitle / Venue / Authors
2017 J jnl
Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology.
Microelectron. Reliab.
Giulio Torrente, Jean Coignus, Alexandre Vernhet, Jean-Luc Ogier, David Roy, Gérard Ghibaudo
2014 — conf
Effect of AC stress on oxide TDDB and trapped charge in interface states.
ISIC
Benjamin Rebuffat, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Romain Laffont
2014 J jnl
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories.
Microelectron. Reliab.
Vincenzo Della Marca, Jérémy Postel-Pellerin, Guillaume Just, Pierre Canet, Jean-Luc Ogier
2013 J jnl
Access resistor modelling for EEPROM's retention test vehicle.
Microelectron. Reliab.
Pierre Canet, Jérémy Postel-Pellerin, Jean-Luc Ogier
2013 — conf
Effect of ions presence in the SiOCH inter metal dielectric structure.
ESSDERC
Benjamin Rebuffat, Vincenzo Della Marca, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Olivier Paulet, Laurent Lopez, Romain Laffont
2012 J jnl
Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability.
J. Low Power Electron.
Guillaume Just, Vincenzo Della Marca, Arnaud Régnier, Jean-Luc Ogier, Jérémy Postel-Pellerin, Jean-Michel Portal, Pascal Masson
2012 J jnl
Investigation of the effects of constant voltage stress on thin SiO
Microelectron. Reliab.
Philippe Chiquet, Pascal Masson, Romain Laffont, Gilles Micolau, Jérémy Postel-Pellerin, Frédéric Lalande, Bernard Bouteille, Jean-Luc Ogier
2011 J jnl
Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress.
Microelectron. Reliab.
Y. Joly, Laurent Lopez, Jean-Michel Portal, Hassen Aziza, Jean-Luc Ogier, Y. Bert, Franck Julien, Pascal Fornara
2009 J jnl
Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities.
Microelectron. Reliab.
Christelle Bénard, Gaëtan Math, Pascal Fornara, Jean-Luc Ogier, Didier Goguenheim
2008 J jnl
Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO
Microelectron. Reliab.
D. Pic, Didier Goguenheim, Jean-Luc Ogier
2008 J jnl
Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications.
Microelectron. Reliab.
D. Pic, Arnaud Régnier, V. Pean, Jean-Luc Ogier, Didier Goguenheim
2007 J jnl
A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories.
Microelectron. Reliab.
D. Pic, Didier Goguenheim, Jean-Luc Ogier
2007 J jnl
A new method to quantify retention-failed cells of an EEPROM CAST.
Microelectron. Reliab.
Claire Le Roux, Laurent Lopez, Abdellatif Firiti, Jean-Luc Ogier, Frédéric Lalande, Romain Laffont, Gilles Micolau
2007 J jnl
Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions.
Microelectron. Reliab.
Didier Goguenheim, D. Pic, Jean-Luc Ogier