James H. Stathis

25 papers Journal 13Unranked 12
YearRankTypeTitle / Venue / Authors
2019 — conf
Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor.
IRPS
Miaomiao Wang, Jingyun Zhang, Huimei Zhou, Richard G. Southwick, Robin Hsin Kuo Chao, Xin Miao, Veeraraghavan S. Basker, Tenko Yamashita, Dechao Guo, Gauri Karve, Huiming Bu, James H. Stathis
2019 — conf
Comprehensive Methodology for Multiple Spots Competing Progressive Breakdown for BEOL/FEOL Applications.
IRPS
Ernest Y. Wu, Baozhen Li, James H. Stathis, Andrew Kim
2019 — conf
Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery.
IRPS
Elnatan Mataev, James H. Stathis, Giuseppe La Rosa, Barry P. Linder
2019 — conf
On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs.
IRPS
Narendra Parihar, Uma Sharma, Richard G. Southwick, Miaomiao Wang, James H. Stathis, Souvik Mahapatra
2018 J jnl
Controversial issues in negative bias temperature instability.
Microelectron. Reliab.
James H. Stathis, Souvik Mahapatra, Tibor Grasser
2018 — conf
Elapsed-time statistics of successive breakdown in the presence of variability for dielectric breakdown in BEOL/MOL/FEOL applications.
IRPS
Ernest Y. Wu, Andrew Kim, Baozhen Li, James H. Stathis
2018 — conf
Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics.
IRPS
Miaomiao Wang, Richard G. Southwick, Kangguo Cheng, James H. Stathis
2018 — conf
The physics of NBTI: What do we really know?
IRPS
James H. Stathis
2017 — conf
Hot carrier reliability in ultra-scaled sige channel p-FinFETs.
ASICON
Miaomiao Wang, Xin Miao, James H. Stathis, Richard G. Southwick
2015 — conf
A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL).
IRPS
Ernest Y. Wu, James H. Stathis, Baozhen Li, Barry P. Linder, Kai Zhao, Griselda Bonilla
2015 — conf
Analyzing path delays for accelerated testing of logic chips.
IRPS
Emily Ray, Barry P. Linder, Raphael Robertazzi, Kevin Stawiasz, Alan J. Weger, Emmanuel Yashchin, James H. Stathis, Peilin Song
2015 — conf
Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET.
IRPS
Miaomiao Wang, Zuoguang Liu, Tenko Yamashita, James H. Stathis, Chia-Yu Chen
2014 — conf
The resilience wall: Cross-layer solution strategies.
VLSI-DAT
Subhasish Mitra, Pradip Bose, Eric Cheng, Chen-Yong Cher, Hyungmin Cho, Rajiv V. Joshi, Young Moon Kim, Charles R. Lefurgy, Yanjing Li, Kenneth P. Rodbell, Kevin Skadron, James H. Stathis, Lukasz G. Szafaryn
2010 J jnl
Reliability of advanced high-k/metal-gate n-FET devices.
Microelectron. Reliab.
James H. Stathis, M. Wang, K. Zhao
2009 J jnl
Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability.
Microelectron. Reliab.
Aditya Bansal, Rahul M. Rao, Jae-Joon Kim, Sufi Zafar, James H. Stathis, Ching-Te Chuang
2008 J jnl
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks.
Microelectron. Reliab.
R. Pagano, Salvatore Lombardo, Felix Palumbo, Paul Kirsch, S. A. Krishnan, Chadwin D. Young, Rino Choi, Gennadi Bersuker, James H. Stathis
2007 J jnl
Influence of the SiO
Microelectron. Reliab.
Esteve Amat, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis
2007 J jnl
Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror.
Microelectron. Reliab.
Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis
2006 J jnl
The negative bias temperature instability in MOS devices: A review.
Microelectron. Reliab.
James H. Stathis, Sufi Zafar
2003 J jnl
Circuit implications of gate oxide breakdown.
Microelectron. Reliab.
James H. Stathis, Rosana Rodríguez, Barry P. Linder
2003 J jnl
Influence and model of gate oxide breakdown on CMOS inverters.
Microelectron. Reliab.
Rosana Rodríguez, James H. Stathis, Barry P. Linder, Rajiv V. Joshi, Ching-Te Chuang
2003 J jnl
Reliability of ultra-thin oxides in CMOS circuits.
Microelectron. Reliab.
James H. Stathis, Barry P. Linder, Rosana Rodríguez, Salvatore Lombardo
2002 J jnl
Analysis of the effect of the gate oxide breakdown on SRAM stability.
Microelectron. Reliab.
Rosana Rodríguez, James H. Stathis, Barry P. Linder, Steven P. Kowalczyk, Ching-Te Chuang, Rajiv V. Joshi, Gregory A. Northrop, Kerry Bernstein, Azeez J. Bhavnagarwala, Salvatore Lombardo
2002 J jnl
Dependence of Post-Breakdown Conduction on Gate Oxide Thickness.
Microelectron. Reliab.
Salvatore Lombardo, James H. Stathis, Barry P. Linder
2002 J jnl
Reliability limits for the gate insulator in CMOS technology.
IBM J. Res. Dev.
James H. Stathis