Jae-Sung Rieh

16 papers C 2Journal 12Unranked 2
YearRankTypeTitle / Venue / Authors
2022 J jnl
A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range.
IEEE Trans. Circuits Syst. II Express Briefs
SooYeon Kim, Daekeun Yoon, Jungsoo Kim, Junghwan Yoo, Kiryong Song, Jae-Sung Rieh
2021 — conf
A 253-280 GHz Wide Tuning Range VCO with -3.5 dBm Peak Output Power in 40-nm CMOS.
ESSCIRC
Surajit Kumar Nath, Junghwan Yoo, Jae-Sung Rieh, Daekeun Yoon
2019 C conf
WR-3 Band Integrated Circuits in InP HBT Technology.
ISCAS
Sanggeun Jeon, Jae-Sung Rieh, Moonil Kim
2015 J jnl
D
Microprocess. Microsystems
Joon Goo Lee, Seon Wook Kim, Dong-Hyun Kim, Younga Cho, Jae-Sung Rieh, Gyusung Kang, Jongsun Park, Hokyu Lee, Sejin Park, Chulwoo Kim
2014 J jnl
A Triple-Push Voltage Controlled Oscillator in 0.13-µm RFCMOS Technology Operating Near 177GHz.
IEICE Trans. Electron.
Namhyung Kim, Kyungmin Kim, Jae-Sung Rieh
2014 J jnl
Bulk acoustic wave resonator with suppressed energy loss using improved lateral structure.
IEICE Electron. Express
Jea-Shik Shin, Insang Song, Moon-Chul Lee, Chul-Soo Kim, Sang Uk Son, Duck-Hwan Kim, Ho-Soo Park, Jing Cui, Yujie Ai, SungWoo Hwang, Jae-Sung Rieh
2012 C conf
Recent progress in terahertz monolithic integrated circuits.
ISCAS
Moonil Kim, Jae-Sung Rieh, Sanggeun Jeon
2012 — conf
Si-based D-band frequency conversion circuits.
ISOCC
Dong-Hyun Kim, Jongwon Yun, Jae-Sung Rieh
2012 J jnl
The Effect of Device Layout Schemes on RF Performance of Multi-Finger MOSFETs.
IEICE Trans. Electron.
Yongho Oh, Jae-Sung Rieh
2011 J jnl
A V-Band Common-Source Low Noise Amplifier in a 0.13 µm RF CMOS Technology and the Effect of Dummy Fills.
IEICE Trans. Electron.
Sungjin Kim, Hyunchul Kim, Dong-Hyun Kim, Sanggeun Jeon, Yeocho Yoon, Jae-Sung Rieh
2010 J jnl
A Low Power V-Band Injection-Locked Frequency Divider in 0.13-µm Si RFCMOS Technology.
IEICE Trans. Electron.
Seungwoo Seo, Jae-Sung Rieh
2005 J jnl
Scaling of SiGe Heterojunction Bipolar Transistors.
Proc. IEEE
Jae-Sung Rieh, David R. Greenberg, Andreas Stricker, Greg G. Freeman
2004 J jnl
Reliability and performance scaling of very high speed SiGe HBTs.
Microelectron. Reliab.
Greg G. Freeman, Jae-Sung Rieh, Zhijian Yang, Fernando J. Guarín
2003 J jnl
Foundation of rf CMOS and SiGe BiCMOS technologies.
IBM J. Res. Dev.
James S. Dunn, David C. Ahlgren, Douglas D. Coolbaugh, Natalie B. Feilchenfeld, Greg G. Freeman, David R. Greenberg, Robert A. Groves, Fernando J. Guarín, Youssef Hammad, Alvin J. Joseph, Louis D. Lanzerotti, Stephen A. St. Onge, Bradley A. Orner, Jae-Sung Rieh, Kenneth J. Stein, Steven H. Voldman, Ping-Chuan Wang, Michael J. Zierak, Seshadri Subbanna, David L. Harame, Dean A. Herman Jr., Bernard S. Meyerson
2003 J jnl
Product applications and technology directions with SiGe BiCMOS.
IEEE J. Solid State Circuits
Alvin J. Joseph, James S. Dunn, Greg G. Freeman, David L. Harame, Douglas Coolbaugh, Robert A. Groves, Kenneth J. Stein, Rich Volant, Seshadri Subbanna, V. S. Marangos, Stephen St. Onge, Ebenezer Eshun, P. Cooper, Jeffrey B. Johnson, Jae-Sung Rieh, Basanth Jagannathan, Vidhya Ramachandran, David Ahlgren, Dawn Wang, X. Wang
2002 J jnl
40-Gb/s circuits built from a 120-GHz f
IEEE J. Solid State Circuits
Greg G. Freeman, Mounir Meghelli, Young Kwark, Steven Zier, Alexander V. Rylyakov, Michael Sorna, Todd Tanji, Oswin M. Schreiber, Keith Walter, Jae-Sung Rieh, Basanth Jagannathan, Alvin J. Joseph, Seshadri Subbanna