Hyungjin Kim

17 papers C 1Journal 16
YearRankTypeTitle / Venue / Authors
2025 J jnl
Bias-Independent True Random Number Generator Circuit using Memristor Noise Signals as Entropy Source.
Adv. Intell. Syst.
Jinwoo Park, Hyunjoong Kim, Hyungjin Kim
2025 J jnl
Configurable Kernel Map Implementation in Memristor Crossbar for Convolution Neural Network.
Adv. Intell. Syst.
Gyeonghae Kim, Sangwook Youn, Jinwoo Park, Hyungjin Kim
2024 J jnl
Overshoot-Suppressed Memristor Array with AlN Oxygen Barrier for Low-Power Operation in the Intelligent Neuromorphic Systems.
Adv. Intell. Syst.
Sungjoon Kim, Kyungho Hong, Hyungjin Kim, Min-Hwi Kim, Woo Young Choi
2024 J jnl
Threshold learning algorithm for memristive neural network with binary switching behavior.
Neural Networks
Sangwook Youn, Yeongjin Hwang, Tae-Hyeon Kim, Sungjoon Kim, Hwiho Hwang, Jinwoo Park, Hyungjin Kim
2023 J jnl
Memristor Crossbar Circuit for Ternary Content-Addressable Memory with Fine-Tuning Operation.
Adv. Intell. Syst.
Sangwook Youn, Sungjoon Kim, Tae-Hyeon Kim, Jinwoo Park, Hyungjin Kim
2023 J jnl
Optimization of Random Telegraph Noise Characteristics in Memristor for True Random Number Generator.
Adv. Intell. Syst.
Min Suk Song, Tae-Hyeon Kim, Hwiho Hwang, Suhyeon Ahn, Hussein Nili, Hyungjin Kim
2022 J jnl
4-bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random-Access Memory Crossbar Array.
Adv. Intell. Syst.
Sungjoon Kim, Jinwoo Park, Tae-Hyeon Kim, Kyungho Hong, Yeongjin Hwang, Byung-Gook Park, Hyungjin Kim
2021 J jnl
Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array.
IEEE Access
Dayoung Kim, Tae-Hyeon Kim, Yun-Yeong Choi, Geun Ho Lee, Jungwon Lee, Wookyung Sun, Byung-Gook Park, Hyungjin Kim, Hyungsoon Shin
2020 J jnl
Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System.
IEEE Access
Jun Tae Jang, Jungi Min, Yeongjin Hwang, Sung-Jin Choi, Dong Myong Kim, Hyungjin Kim, Dae Hwan Kim
2019 J jnl
4K-Memristor Analog-Grade Passive Crossbar Circuit.
CoRR
Hyungjin Kim, Hussein Nili, Mahmood Mahmoodi, Dmitri B. Strukov
2019 C conf
Towards the Development of Analog Neuromorphic Chip Prototype with 2.4M Integrated Memristors.
ISCAS
Irina Kataeva, Shigeki Ohtsuka, Hussein Nili, Hyungjin Kim, Yoshihiko Isobe, Koichi Yako, Dmitri B. Strukov
2013 J jnl
Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel.
IEICE Trans. Electron.
Min-Chul Sun, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Byung-Gook Park
2012 J jnl
Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors.
IEICE Trans. Electron.
Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Hyungjin Kim, Byung-Gook Park
2012 J jnl
Effects of Conductive Defects on Unipolar RRAM for the Improvement of Resistive Switching Characteristics.
IEICE Trans. Electron.
Kyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, Hyungjin Kim, Byung-Gook Park
2012 J jnl
Novel Three Dimensional (3D) NAND Flash Memory Array Having Tied Bit-line and Ground Select Transistor (TiGer).
IEICE Trans. Electron.
Se Hwan Park, Yoon Kim, Wandong Kim, Joo Yun Seo, Hyungjin Kim, Byung-Gook Park
2012 J jnl
Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance.
IEICE Electron. Express
Seongjae Cho, Hyungjin Kim, Min-Chul Sun, In Man Kang, Byung-Gook Park, James S. Harris Jr.
2012 J jnl
Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using
IEICE Trans. Electron.
Hyungjin Kim, Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Byung-Gook Park