Hyungcheol Shin

30 papers A 2Journal 23Unranked 5
YearRankTypeTitle / Venue / Authors
2025 J jnl
Closed-Form Capacitance Network Compact Model and Monte Carlo Analysis of the GIDL-Assisted Potential Growth in 3-D NAND Flash String.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Sungju Kim, Hyungcheol Shin
2025 J jnl
Enhancing Pitch Perception and Melodic Reproduction of Hard-of-Hearing Individuals Using a Vibrotactile Glove.
Int. J. Hum. Comput. Interact.
Sungyong Shin, Sunwoo Baek, Sohyun Park, Hyeonbeom Yi, Hyungcheol Shin, Woohun Lee
2024 J jnl
Modeling of Threshold Voltage Shift by Neighboring Transistors for Macaroni Channel MOSFETs in Series.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Quan Nguyen-Gia, Hyungcheol Shin
2023 J jnl
A Novel Read Scheme Using GIDL Current to Suppress Read Disturbance in 3-D nand Flash Memories.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Hyungjun Jo, Jongwoo Kim, Hyungcheol Shin
2022 J jnl
Investigation of endurance degradation for 3-D charge trap NAND flash memory with bandgap-engineered tunneling oxide.
IEICE Electron. Express
Jongwoo Kim, Hyungjun Jo, Yonggyu Cho, Hyunyoung Shim, Jaesung Sim, Hyungcheol Shin
2021 J jnl
Optimizing read disturb phenomenon with new read scheme by partial-boosting channel in 3-D NAND Flash memories.
IEICE Electron. Express
Sangmin Ahn, Hyungcheol Shin
2020 — conf
28.2 A 51dB-SNR 120Hz-Scan-Rate 32×18 Segmented-VCOM LCD In-Cell Touch-Display-Driver IC with 96-Channel Compact Shunt-Sensing Self-Capacitance Analog Front-End.
ISSCC
Hongjae Jang, Hyungcheol Shin, Jaemin Lee, Changwon Yoo, Kanghyup Chun, Ilhyun Yun
2020 J jnl
A Simple and Accurate Modeling Method of Channel Thermal Noise Using BSIM4 Noise Models.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Ilho Myeong, Juhyun Kim, Hyungwoo Ko, Ickhyun Song, Yongseok Kim, Hyungcheol Shin
2020 J jnl
Machine learning model for predicting threshold voltage by taper angle variation and word line position in 3D NAND flash memory.
IEICE Electron. Express
Dong Chan Lee, Jang Kyu Lee, Hyungcheol Shin
2020 — conf
Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories.
IRPS
Changbeom Woo, Shinkeun Kim, Jaeyeol Park, Hyungcheol Shin, Haesoo Kim, Gil-Bok Choi, Moon-Sik Seo, Keum Hwan Noh
2020 A conf
Tactile Tone System: A Wearable Device to Assist Accuracy of Vocal Pitch in Cochlear Implant Users.
ASSETS
Sungyong Shin, Changmok Oh, Hyungcheol Shin
2020 J jnl
Transient program operation model considering distribution of electrons in 3D NAND flash memories.
IEICE Electron. Express
Dong Chan Lee, Hyungcheol Shin
2014 — conf
12.5 2D Coded-aperture-based ultra-compact capacitive touch-screen controller with 40 reconfigurable channels.
ISSCC
Hongjae Jang, Hyungcheol Shin, Seunghoon Ko, Ilhyun Yun, Kwyro Lee
2014 J jnl
Analysis and modeling for random telegraph noise of GIDL current in saddle MOSFET for DRAM application.
IEICE Electron. Express
Dyukyoung Moon, Hyunseul Lee, Changhwan Shin, Hyungcheol Shin
2014 — conf
Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory.
ESSDERC
Kyunghwan Lee, Duckseoung Kang, Hyungcheol Shin, Sangjin Kwon, Shinhyung Kim, Yuchul Hwang
2013 — conf
A 55dB SNR with 240Hz frame scan rate mutual capacitor 30×24 touch-screen panel read-out IC using code-division multiple sensing technique.
ISSCC
Hyungcheol Shin, Seunghoon Ko, Hongjae Jang, Ilhyun Yun, Kwyro Lee
2013 J jnl
L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications.
IEICE Trans. Electron.
Sang Wan Kim, Woo Young Choi, Min-Chul Sun, Hyun Woo Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park
2011 J jnl
The novel SCR-based ESD protection with low triggering and high holding voltages.
Microelectron. J.
Myounggon Kang, Ki-Whan Song, Byung-Gook Park, Hyungcheol Shin
2010 J jnl
Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices.
IEICE Trans. Electron.
Seongjae Cho, Jung Hoon Lee, Yoon Kim, Jang-Gn Yun, Hyungcheol Shin, Byung-Gook Park
2009 J jnl
3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array.
IEICE Trans. Electron.
Yoon Kim, Seongjae Cho, Gil Sung Lee, Il-Han Park, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park
2009 J jnl
Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design.
IEICE Trans. Electron.
Jongwook Jeon, Ickhyun Song, Jong Duk Lee, Byung-Gook Park, Hyungcheol Shin
2009 J jnl
Design Consideration for Vertical Nonvolatile Memory Device Regarding Gate-Induced Barrier Lowering (GIBL).
IEICE Trans. Electron.
Seongjae Cho, Jung Hoon Lee, Gil Sung Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park
2009 J jnl
Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory.
IEICE Trans. Electron.
Doo-Hyun Kim, Il-Han Park, Seongjae Cho, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park
2008 J jnl
Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI).
IEICE Trans. Electron.
Seongjae Cho, Il-Han Park, Jung Hoon Lee, Jang-Gn Yun, Doo-Hyun Kim, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park
2008 J jnl
FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs.
IEICE Trans. Electron.
Hochul Lee, Youngchang Yoon, Ickhyun Song, Hyungcheol Shin
2007 J jnl
Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs.
IEICE Trans. Electron.
Hochul Lee, Youngchang Yoon, Seongjae Cho, Hyungcheol Shin
2007 J jnl
Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices.
IEICE Trans. Electron.
Seongjae Cho, Jang-Gn Yun, Il-Han Park, Jung Hoon Lee, Jong Pil Kim, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park
2005 J jnl
Complete high-frequency thermal noise modeling of short-channel MOSFETs and design of 5.2-GHz low noise amplifier.
IEEE J. Solid State Circuits
Kwangseok Han, Joonho Gil, Seong-Sik Song, Jeonghu Han, Hyungcheol Shin, Choong-Ki Kim, Kwyro Lee
2003 J jnl
A simple four-terminal small-signal model of RF MOSFETs and its parameter extraction.
Microelectron. Reliab.
Minkyu Je, Jeonghu Han, Hyungcheol Shin, Kwyro Lee
1998 A conf
A high speed and low power SOL inverter using active body-bias.
ISLPED
Joonho Gil, Minkyu Je, Jongho Lee, Hyungcheol Shin