Huixiang Huang

13 papers Journal 7Unranked 6
YearRankTypeTitle / Venue / Authors
2024 — conf
Comparative Study of Proton and Heavy Ion-induced Damages for GaN-based HEMTs.
EITCE
Zhipeng Wu, Huixiang Huang, Jianqun Yang, Zhifeng Lei, Xiuhai Cui, Teng Ma, Chao Peng
2023 — conf
Design of SJ-IGBT Based on Carrier Storage Layer.
EITCE
Bohan Yuan, Zhipeng Wu, Dahui Jiang, Huixiang Huang
2023 — conf
Novel Design of an Ultra Compact Software Defined Radio System with High-density Fan-out SiP Technology.
EITCE
Daijiong Chen, Shuangfu Wang, Qifu Wei, Huixiang Huang
2023 J jnl
Progressive attention integration-based multi-scale efficient network for medical imaging analysis with application to COVID-19 diagnosis.
Comput. Biol. Medicine
Tingyi Xie, Zidong Wang, Han Li, Peishu Wu, Huixiang Huang, Hongyi Zhang, Fuad E. Alsaadi, Nianyin Zeng
2023 — conf
Radiation Tolerant Silicon-on-Insulator MOSFETs Based on Special Neutron Irradiation Process.
EITCE
Jienan Zhan, Daijiong Chen, Tingyi Xie, Huixiang Huang
2022 — conf
A Low Power Operational Amplifier Design Based on SOI DTMOS.
EITCE
Tao He, Qi Han, Yu Li, Peng Yuan, Huixiang Huang
2022 — conf
An Improved Dense Crowd Detection Algorithm Based on YOLOv5.
EITCE
Yu Li, Tiejun Li, Huixiang Huang
2020 J jnl
DCCRGAN: Deep Complex Convolution Recurrent Generator Adversarial Network for Speech Enhancement.
CoRR
Huixiang Huang, Renjie Wu, Jingbiao Huang, Jucai Lin
2016 J jnl
Hardening silicon-on-insulator nMOSFETs by multiple-step Si
Microelectron. Reliab.
Huixiang Huang, Yanyan Huang, Jiachun Zheng, Sufen Wei, Kai Tang, Dawei Bi, Zhengxuan Zhang
2014 J jnl
Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment.
Microelectron. J.
Huixiang Huang, Dawei Bi, Zhengxuan Zhang
2014 J jnl
Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation.
Microelectron. Reliab.
Chao Peng, Zhiyuan Hu, Zhengxuan Zhang, Huixiang Huang, Bingxu Ning, Dawei Bi
2013 J jnl
Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs.
Microelectron. Reliab.
Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Zhiyuan Hu, Ming Chen, Shichang Zou
2013 J jnl
Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs.
Microelectron. J.
Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Ming Chen, Shichang Zou