Huilong Zhu - RankMe

16 papers Journal 14Unranked 2

Year	Rank	Type	Title / Venue / Authors
2025	J	`jnl`	Analysis of different SiC MOSFET gate driver strategies influencing paralleling performance. IEICE Electron. Express Hanrui Wang, Kai Huang, Bao Liu, Tianyang Wang, Ying Xin, Huilong Zhu
2023	J	`jnl`	On the SRAM with comb-shaped nano FETs advancing to 3 nm node and beyond. Microelectron. J. Xinhao Li, Huilong Zhu, Zhenzhen Kong, Qi Wang, Yongkui Zhang, Zhenhua Wu
2022	—	`conf`	Data Augmentation Algorithm Based on Local Dynamic Transformation. AIIPCC Huilong Zhu, Jing Zhang, Li Hu, Chenghao Li, Maomao Shan, Qiyu Duan
2022	J	`jnl`	In-and-Out: a data augmentation technique for computer vision tasks. J. Electronic Imaging Chenghao Li, Jing Zhang, Li Hu, Hao Zhao, Huilong Zhu, Maomao Shan
2021	J	`jnl`	Investigation of negative DIBL effect for ferroelectric-based FETs to improve MOSFETs and CMOS circuits. Microelectron. J. Weixing Huang, Huilong Zhu, Yongkui Zhang, Zhenhua Wu, Kunpeng Jia, Xiaogen Yin, Yangyang Li, Chen Li, Xuezheng Ai, Qiang Huo, Junfeng Li
2021	J	`jnl`	Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit. Microelectron. J. Jiali Huo, Weixing Huang, Fan Zhang, Shengli Zhang, Weizhuo Gan, Qiang Huo, Yuwei Cai, Qingzhu Zhang, Yongliang Li, Huilong Zhu, Huaxiang Yin, Zhenhua Wu
2020	J	`jnl`	Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO Sci. China Inf. Sci. Hong Yang, Luwei Qi, Yanbo Zhang, Bo Tang, Qianqian Liu, Hao Xu, Xueli Ma, Xiaolei Wang, Yongliang Li, Huaxiang Yin, Junfeng Li, Huilong Zhu, Chao Zhao, Wenwu Wang, Tianchun Ye
2020	J	`jnl`	Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET. IEICE Electron. Express Huilong Zhu, Dawei Bi, Xin Xie, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou
2020	J	`jnl`	The Investigation of Negative Capacitance Vertical Nanowire FETs Based on SPICE Model at Device-Circuit Level. CoRR Weixing Huang, Huilong Zhu, Kunpeng Jia, Zhenhua Wu, Xiaogen Yin, Qiang Huo, Yongkui Zhang
2019	J	`jnl`	Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer. IEICE Electron. Express Xin Xie, Huilong Zhu, Mengying Zhang, Dawei Bi, Zhiyuan Hu, Zhengxuan Zhang, Shichang Zou
2018	J	`jnl`	A novel SEU tolerant memory cell for space applications. IEICE Electron. Express Dianpeng Lin, Yiran Xu, Xiaoyun Li, Xin Xie, Jianwei Jiang, Jiangchuan Ren, Huilong Zhu, Zhengxuan Zhang, Shichang Zou
2018	J	`jnl`	A novel highly reliable and low-power radiation hardened SRAM bit-cell design. IEICE Electron. Express Dianpeng Lin, Yiran Xu, Xiaonian Liu, Wenyi Zhu, Lihua Dai, Mengying Zhang, Xiaoyun Li, Xin Xie, Jianwei Jiang, Huilong Zhu, Zhengxuan Zhang, Shichang Zou
2018	J	`jnl`	A novel self-recoverable and triple nodes upset resilience DICE latch. IEICE Electron. Express Dianpeng Lin, Yiran Xu, Xiaoyun Li, Xin Xie, Jianwei Jiang, Jiangchuan Ren, Huilong Zhu, Zhengxuan Zhang, Shichang Zou
2017	J	`jnl`	Charge pumping test technique using CMOS ring oscillator on leakage issue. Microelectron. J. Yongbo Liu, Zhengyong Zhu, Huilong Zhu, Guangxing Wan, Junfeng Li, Chao Zhao
2016	J	`jnl`	Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer. Microelectron. Reliab. Weichun Luo, Hong Yang, Wenwu Wang, Yefeng Xu, Bo Tang, Shangqing Ren, Hao Xu, Yanrong Wang, Luwei Qi, Jiang Yan, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye
2015	—	`conf`	Overshoot stress impact on HfO2 high-κ layer dynamic SILC. ASICON Guangxing Wan, Tianli Duan, Shuxiang Zhang, Lingli Jiang, Bo Tang, Chao Zhao, Huilong Zhu, Hongyu Yu