Huaxiang Yin

26 papers Journal 19Unranked 7
YearRankTypeTitle / Venue / Authors
2026 J jnl
Enhanced performance and gate-length scaling of gate-all-around devices and circuits with hourglass-shaped channels.
Microelectron. J.
Hang Zhang, Kun Yang, Zhanfeng Liu, Qingkun Li, Zhongrui Wang, Jie Xu, Jiaxin Yao, Fengcheng Wu, Lianlian Li, Zhenhua Wu, Renjie Jiang, Peng Wang, Yunjiao Bao, Yuzhe Yu, Yanyu Yang, Lei Cao, Junfeng Li, Qingzhu Zhang, Huaxiang Yin
2026 J jnl
Improved uniformity and performance of GAAFETs via full bottom dielectric isolation and quasi-self-aligned landing pads.
Microelectron. J.
Zhongrui Wang, Kun Yang, Jiaxin Yao, Zhanfeng Liu, Hang Zhang, Yuzhe Yu, Jie Xu, Yanyu Yang, Haitao Zhao, Lei Cao, Yadong Zhang, Zhaohao Zhang, Renjie Jiang, Meihe Zhang, Yanyi Pan, Mingzhu Yan, Yingze Ren, Zhongshan Xie, Yajuan Su, Jing Xu, Linfei Wang, Hainan Liu, Junfeng Li, Qingzhu Zhang, Huaxiang Yin, Bo Li, Xiaolei Wang, Jun Luo
2025 J jnl
An AND-type 1T-FeFET array with robust write and read operations.
Sci. China Inf. Sci.
Jiacheng Xu, Jiayi Zhao, Hongrui Zhang, Haoji Qian, Jiani Gu, Bowen Chen, Gaobo Lin, Rongzong Shen, Xinda Song, Huan Liu, Yian Ding, Minglei Ma, Miaomiao Zhang, Xiao Yu, Bing Chen, Ran Cheng, Gaobo Xu, Huaxiang Yin, Yan Liu, Jiajia Chen, Chengji Jin, Genquan Han
2025 J jnl
Channel geometry-Driven performance enhancement under metal gate strain engineering in GAAFET.
Microelectron. J.
Haiyuan Lyu, Lei Cao, Qingkun Li, Zhaohao Zhang, Huaxiang Yin
2025 J jnl
Performance improvement of gate-all-around (GAA) devices by optimized super-steep retrograde well.
Microelectron. J.
Qingkun Li, Qingzhu Zhang, Lei Cao, Lianlian Li, Xuexiang Zhang, Chuqiao Niu, Guanqiao Sang, Yunjiao Bao, Huaxiang Yin, Zhenhua Wu
2025 J jnl
Stacked gate-all-around nanosheet transistors with full-air-spacers for reducing parasitic capacitance to improve device and circuit performance.
Microelectron. J.
Lianlian Li, Lei Cao, Xuexiang Zhang, Qingkun Li, Zhenhua Wu, Meihe Zhang, Yunjiao Bao, Peng Wang, Renjie Jiang, Anyan Du, Qingzhu Zhang, Huaxiang Yin
2025 — conf
Trap Behaviors and Degradation Modeling in Positive Bias Temperature Instability of Back Gated IGZO Transistors.
IRPS
Liang Xiang, Gangping Yan, Yunfei Shi, Hong Yang, Shangbo Yang, Gaobo Xu, Xiaolei Wang, Guilei Wang, Huaxiang Yin, Chao Zhao, Jun Luo, Wenwu Wang
2024 J jnl
Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs.
Sci. China Inf. Sci.
Fan Zhang, Zhaohao Zhang, Jiaxin Yao, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Huan Liu, Genquan Han, Yan Liu, Huaxiang Yin
2024 — conf
Reversible and Irreversible Polarization Degradation of Hf0.5Zr0.5O2 Capacitors with Coherent Structural Transition at Elevated Temperatures.
IRPS
Zhaomeng Gao, Tianjiao Xin, Cheng Liu, Yilin Xu, Yiwei Wang, Yunzhe Zheng, Rui Wang, Xiaotian Li, Yonghui Zheng, Kai Du, Diqing Su, Zhaohao Zhang, Huaxiang Yin, Weifeng Zhang, Chao Li, Xiaoling Lin, Haitao Jiang, Sannian Song, Zhitang Song, Yan Cheng, Hangbing Lyu
2024 J jnl
Source/drain extension asymmetric counter-doping for suppressing channel leakage in stacked nanosheet transistors.
Microelectron. J.
Qingkun Li, Lei Cao, Qingzhu Zhang, Lianlian Li, Xuexiang Zhang, Chuqiao Niu, Guanqiao Sang, Yunjiao Bao, Huaxiang Yin, Zhenhua Wu
2023 J jnl
Investigation on dependency of thermal characteristics on gate/drain bias voltages in stacked nanosheet transistors.
Microelectron. J.
Peng Zhao, Lei Cao, Fan Zhang, Haoqing Xu, Weizhuo Gan, Qingzhu Zhang, Zhaohao Zhang, Jiaxin Yao, Guoliang Tian, Kun Luo, Zhenhua Wu, Huaxiang Yin
2023 J jnl
Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications.
Sci. China Inf. Sci.
Zhaohao Zhang, Guoliang Tian, Jiali Huo, Fang Zhang, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Yan Cheng, Yan Liu, Huaxiang Yin
2023 J jnl
Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.
Adv. Intell. Syst.
Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang
2022 — conf
Investigation on Contacts Thermal Stability for 3D Sequential Integration.
IRPS
S. J. Mao, J. B. Liu, Y. Wang, W. B. Liu, Y. P. Hu, H. W. Cui, R. Zhang, H. C. Liu, Z. X. Wang, N. Zhou, Y. K. Zhang, Hong Yang, Zhenhua Wu, Yongliang Li, J. F. Gao, Anyun Du, Junfeng Li, Jun Luo, Wenwu Wang, Huaxiang Yin
2022 — conf
Prediction of Key Metrics of Stacked Nanosheet nFETs using Genetic Algorithm-based Neural Networks.
ICTA
Haoqing Xu, Weizhuo Gan, Lei Cao, Huaxiang Yin, Zhenhua Wu
2022 J jnl
Transfer Learning for Improving Seismic Building Damage Assessment.
Remote. Sens.
Qigen Lin, Tianyu Ci, Leibin Wang, Sanjit Kumar Mondal, Huaxiang Yin, Ying Wang
2021 — conf
A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.
IRPS
Longda Zhou, Zhaohao Zhang, Hong Yang, Zhigang Ji, Qianqian Liu, Qingzhu Zhang, Eddy Simoen, Huaxiang Yin, Jun Luo, Anyan Du, Chao Zhao, Wenwu Wang
2021 — conf
Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs.
IRPS
Hao Chang, Longda Zhou, Hong Yang, Zhigang Ji, Qianqian Liu, Eddy Simoen, Huaxiang Yin, Wenwu Wang
2021 J jnl
Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit.
Microelectron. J.
Jiali Huo, Weixing Huang, Fan Zhang, Shengli Zhang, Weizhuo Gan, Qiang Huo, Yuwei Cai, Qingzhu Zhang, Yongliang Li, Huilong Zhu, Huaxiang Yin, Zhenhua Wu
2020 — conf
Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs.
IRPS
Longda Zhou, Qingzhu Zhang, Hong Yang, Zhigang Ji, Zhaohao Zhang, Renren Xu, Huaxiang Yin, Wenwu Wang
2020 J jnl
Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO
Sci. China Inf. Sci.
Hong Yang, Luwei Qi, Yanbo Zhang, Bo Tang, Qianqian Liu, Hao Xu, Xueli Ma, Xiaolei Wang, Yongliang Li, Huaxiang Yin, Junfeng Li, Huilong Zhu, Chao Zhao, Wenwu Wang, Tianchun Ye
2020 J jnl
Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.
IEEE Access
Gangping Yan, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Linjie Fan, Huaxiang Yin
2020 J jnl
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors.
Sci. China Inf. Sci.
Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang
2018 J jnl
Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment.
Microelectron. Reliab.
Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han, Huaxiang Yin
2018 J jnl
Process variation dependence of total ionizing dose effects in bulk nFinFETs.
Microelectron. Reliab.
Bo Li, Yunbo Huang, Ling Yang, Qingzhu Zhang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Jianhui Bu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Haibin Wang
2015 J jnl
Gate-All-Around Silicon Nanowire Transistors with channel-last process on bulk Si substrate.
IEICE Electron. Express
Xiaolong Ma, Huaxiang Yin, Peizhen Hong