Hideaki Matsuzaki

24 papers Journal 9Unranked 15
YearRankTypeTitle / Venue / Authors
2025 — conf
226 Gbps PAM4 Operation Using Differential Drive EA-DFB Laser with 2.0-Vppd Swing over 10-km SSMF Transmission for 1.6TbE Transceivers.
OFC
Shuhei Ohno, Takanori Suzuki, Hideaki Matsuzaki, Koichiro Adachi, Ryosuke Hatai, Ryo Nakao, Shinichi Tanaka, Atsushi Mimura, Takashi Suzuki, Noriko Sasada, Shigehisa Tanaka, Kazuhiko Naoe
2022 — conf
Nanosecond-scale Hitless λ-switching of SOA-integrated Electro-optically Tunable RTF Laser with +/-2.5-GHz Dynamic Frequency Accuracy.
OFC
Yuta Ueda, Yusuke Saito, Takahiko Shindo, Shigeru Kanazawa, Wataru Kobayashi, Hideaki Matsuzaki, Mitsuteru Ishikawa
2020 — conf
230-305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology.
BCICTS
Hiroshi Hamada, Takuya Tsutsumi, Adam Pander, Masahito Nakamura, Go Itami, Hideaki Matsuzaki, Hiroki Sugiyama, Hideyuki Nosaka
2020 J jnl
300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers.
IEEE J. Solid State Circuits
Hiroshi Hamada, Takuya Tsutsumi, Hideaki Matsuzaki, Takuya Fujimura, Ibrahim Abdo, Atsushi Shirane, Kenichi Okada, Go Itami, Ho-Jin Song, Hiroki Sugiyama, Hideyuki Nosaka
2020 — conf
Burst-Tolerant λ-Switching of Electro-Optically Tunable Reflection-type Transversal Filter Laser with Single Active Region.
ECOC
Yusuke Saito, Yuta Ueda, Takahiko Shindo, Shigeru Kanazawa, Hideaki Matsuzaki, Mitsuteru Ishikawa
2020 — conf
High Output Power and Compact LAN-WDM EADFB Laser TOSA for 4 × 100-Gbit/s/λ 40-km Fiber-Amplifier-Less Transmission.
OFC
Shigeru Kanazawa, Takahiko Shindo, Mingchen Chen, Naoki Fujiwara, Masahiro Nada, Toshihide Yoshimatsu, Atsushi Kanda, Yasuhiko Nakanishi, Fumito Nakajima, Kimikazu Sano, Yozo Ishikawa, Kazuyo Mizuno, Hideaki Matsuzaki
2020 — conf
Inverted p-down pin photodiode exceeding 70-GHz bandwidth featuring low operating bias voltage of 2 V.
ECOC
Masahiro Nada, Fumito Nakajima, Shoko Tatsumi, Yuki Yamada, Yasuhiko Nakanishi, Toshihide Yoshimatsu, Kimikazu Sano, Hideaki Matsuzaki
2020 — conf
Ultra-high Speed InP/GaAsSb-based Type-II Double-heterojunction Bipolar Transistors and Transfer Technology onto SiC Substrate.
BCICTS
Yuta Shiratori, Takuya Hoshi, Hideaki Matsuzaki
2019 — conf
300-GHz 120-Gb/s Wireless Transceiver with High-Output-Power and High-Gain Power Amplifier Based on 80-nm InP-HEMT Technology.
BCICTS
Hiroshi Hamada, Takuya Tsutsumi, Go Itami, Hiroki Sugiyama, Hideaki Matsuzaki, Kenichi Okada, Hideyuki Nosaka
2019 J jnl
InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz
IEICE Electron. Express
Takuya Hoshi, Norihide Kashio, Yuta Shiratori, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki
2018 — conf
106-Gbit/s PAM4 40-km Transmission Using an Avalanche Photodiode With 42-GHz Bandwidth.
OFC
Masahiro Nada, Toshihide Yoshimatsu, Yoshifumi Muramoto, Tetsuichiro Ohno, Fumito Nakajima, Hideaki Matsuzaki
2018 J jnl
Dispersion tolerance of 100-Gbit/s PAM4 optical link utilizing high-speed avalanche photodiode receiver.
IEICE Electron. Express
Toshihide Yoshimatsu, Masahiro Nada, Shigeru Kanazawa, Fumito Nakajima, Hideaki Matsuzaki, Kimikazu Sano
2017 — conf
28-Gbit/s 80-km transmission using SOA-assisted extended-reach EADFB laser (AXEL).
OFC
Koichi Hasebe, Wataru Kobayashi, Naoki Fujiwara, Takahiko Shindo, Toshihide Yoshimatsu, Shigeru Kanazawa, Tetsuichiro Ohno, Hiroaki Sanjoh, Yoshitaka Ohiso, Hiroyuki Ishii, Yoshiaki Sone, Hideaki Matsuzaki
2017 J jnl
Advantages of SOA Assisted Extended Reach EADFB Laser (AXEL) for Operation at Low Power and with Extended Transmission Reach.
IEICE Trans. Electron.
Wataru Kobayashi, Naoki Fujiwara, Takahiko Shindo, Yoshitaka Ohiso, Shigeru Kanazawa, Hiroyuki Ishii, Koichi Hasebe, Hideaki Matsuzaki, Mikitaka Itoh
2016 — conf
56-Gbit/s 40-km optical-amplifier-less transmission with NRZ format using high-speed avalanche photodiodes.
OFC
Masahiro Nada, Takuya Hoshi, Shigeru Kanazawa, Toshikazu Hashimoto, Hideaki Matsuzaki
2016 J jnl
Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz
IEICE Trans. Electron.
Norihide Kashio, Takuya Hoshi, Kenji Kurishima, Minoru Ida, Hideaki Matsuzaki
2015 — conf
High-linearity avalanche photodiode for 40-km transmission with 28-Gbaud PAM4.
OFC
Masahiro Nada, Shigeru Kanazawa, Hiroshi Yamazaki, Yasuhiko Nakanishi, Wataru Kobayashi, Yoshiyuki Doi, Takaharu Ohyama, Tetsuichiro Ohno, Kiyoto Takahata, Toshikazu Hashimoto, Hideaki Matsuzaki
2014 — conf
High-speed avalanche photodiodes for 100-Gb/s systems and beyond.
ECOC
Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Toshihide Yoshimatsu, Hideaki Matsuzaki
2006 J jnl
Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs.
IEICE Trans. Electron.
Hideaki Matsuzaki, Takashi Maruyama, Takatomo Enoki, Masami Tokumitsu
2006 J jnl
W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs.
IEICE Trans. Electron.
Koji Inafune, Eiichi Sano, Hideaki Matsuzaki, Toshihiko Kosugi, Takatomo Enoki
2004 J jnl
Low-power and High-speed SCFL-inverter Using Pseudomorphic InGaAs Channel High Electron Mobility Transistors.
IEICE Electron. Express
Hideaki Matsuzaki, Kimikazu Sano, Takatomo Enoki
2004 J jnl
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors.
IEICE Electron. Express
Hideaki Matsuzaki, Hiroki Sugiyama, Haruki Yokoyama, Takashi Kobayashi, Takatomo Enoki
1999 — conf
A Novel High-Speed Flip-Flop Circuit Using RTDs and HEMTs.
Great Lakes Symposium on VLSI
Hideaki Matsuzaki, Toshihiro Itoh, Masafumi Yamamoto
1999 — conf
Ultrahigh-Speed Circuits Using Resonant Tunneling Devices.
Great Lakes Symposium on VLSI
Masafumi Yamamoto, Hideaki Matsuzaki, Toshihiro Itoh, Takao Waho, T. Akeyoshi, J. Osaka