Hichame Maanane

13 papers C 1Journal 10Unranked 2
YearRankTypeTitle / Venue / Authors
2019 C conf
Implementation and Experimental Validation of Robust Numerical Control for DC-DC Buck Converter.
CoDIT
Abdivall Maouloud, Moussa Boukhnifer, Chérif Larouci, Hichame Maanane, Fabien Simon
2014 — conf
A workbench development for L-band LDMOS amplifier reliability study (electronic power transistors reliabilty for radar applications).
ICMCS
Pascal Dherbécourt, Olivier Latry, Eric Joubert, Karine Dehais-Mourgues, Hichame Maanane, Jean Pierre Sipma, Philippe Eudeline
2012 J jnl
Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life.
Microelectron. Reliab.
Jean-Baptiste Fonder, Olivier Latry, Cedric Duperrier, M. Stanislawiak, Hichame Maanane, Philippe Eudeline, Farid Temcamani
2012 J jnl
Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test.
Microelectron. Reliab.
Jean-Baptiste Fonder, Laetitia Chevalier, Cédric Genevois, Olivier Latry, Cedric Duperrier, Farid Temcamani, Hichame Maanane
2011 J jnl
Characterization and modeling of hot carrier injection in LDMOS for L-band radar application.
Microelectron. Reliab.
Loïc Lachèze, Olivier Latry, Pascal Dherbécourt, Karine Mourgues, V. Purohit, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline
2010 J jnl
A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications.
Microelectron. Reliab.
Olivier Latry, Pascal Dherbécourt, Karine Mourgues, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline, Mohamed Masmoudi
2007 J jnl
Study of hot-carrier effects on power RF LDMOS device reliability.
Microelectron. Reliab.
M. Gares, Mohamed Ali Belaïd, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Philippe Eudeline
2006 J jnl
Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests.
Microelectron. Reliab.
Mohamed Ali Belaïd, K. Ketata, Mohamed Masmoudi, M. Gares, Hichame Maanane, Jérôme Marcon
2006 J jnl
Hot carrier reliability of RF N- LDMOS for S Band radar application.
Microelectron. Reliab.
M. Gares, Hichame Maanane, Mohamed Masmoudi, Pierre Bertram, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, Philippe Eudeline
2006 — conf
Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance.
CCECE
M. Gares, Hichame Maanane, Mohamed Ali Belaïd, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Pierre Bertram, Philippe Eudeline
2006 J jnl
Study of RF N
Microelectron. Reliab.
Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, K. Ketata, Philippe Eudeline
2005 J jnl
Comparative analysis of accelerated ageing effects on power RF LDMOS reliability.
Microelectron. Reliab.
Mohamed Ali Belaïd, K. Ketata, Karine Mourgues, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon
2004 J jnl
Reliability study of Power RF LDMOS for Radar Application.
Microelectron. Reliab.
Hichame Maanane, Pierre Bertram, Jérôme Marcon, Mohamed Masmoudi, Mohamed Ali Belaïd, Karine Mourgues, Philippe Eudeline, K. Ketata