Hervé Morel

22 papers A 1C 1Journal 16Unranked 4
YearRankTypeTitle / Venue / Authors
2024 J jnl
Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs.
IEEE Trans. Ind. Electron.
Oriol Avino-Salvado, Cyril Buttay, Ferran Bonet, Christophe Raynaud, Pascal Bevilacqua, José Rebollo, Hervé Morel, Xavier Perpiñà
2023 — conf
Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration.
MIXDES
Ralph Makhoul, Abdelhakim Bourennane, Luong-Viêt Phung, Frédéric Richardeau, Mihai Lazar, Nour Beydoun, Sergueï Kostcheev, Philippe Godignon, Dominique Planson, Hervé Morel, David Bourrier
2023 J jnl
Robust Regulation of a Power Flow Controller via Nonlinear Integral Action.
IEEE Trans. Control. Syst. Technol.
Tanguy Simon, Mattia Giaccagli, Jean-François Trégouët, Daniele Astolfi, Vincent Andrieu, Hervé Morel, Xuefang Lin-Shi
2022 J jnl
Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes.
Microelectron. J.
P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong-Viêt Phung, Thi Huong Ngo, Philippe De Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson
2021 — conf
Robust Output Set-Point Tracking for a Power Flow Controller via Forwarding Design.
CDC
Tanguy Simon, Mattia Giaccagli, Jean-François Trégouët, Daniele Astolfi, Vincent Andrieu, Xuefang Lin-Shi, Hervé Morel
2019 C conf
A Study on Shunt Resistor-based Current Measurements for Fast Switching GaN Devices.
IECON
Thilini Wickramasinghe, Stephane Azzopardi, Bruno Allard, Cyril Buttay, Charles Joubert, Christian Martin, Jean-François Mogniotte, Hervé Morel, Pascal Bevilacqua, Thanh-Long Le
2019 — conf
VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate.
IRPS
Besar Asllani, Alberto Castellazzi, Oriol Avino-Salvado, Asad Fayyaz, Hervé Morel, Dominique Planson
2018 J jnl
Measurement and analysis of SiC-MOSFET threshold voltage shift.
Microelectron. Reliab.
Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel
2018 — conf
Robustness study of 1700 V 45 mΩ SiC MOSFETs.
ICIT
Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel
2018 J jnl
Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode.
Microelectron. Reliab.
Oriol Avino-Salvado, Hervé Morel, Cyril Buttay, Denis Labrousse, Stéphane Lefebvre
2017 J jnl
A Novel Approach to Accurately Determine the t
IEEE Trans. Ind. Electron.
Hatem Garrab, Atef Jedidi, Hervé Morel, Kamel Besbes
2017 J jnl
High temperature ageing of microelectronics assemblies with SAC solder joints.
Microelectron. Reliab.
Wissam Sabbah, Pierre Bondue, Oriol Avino-Salvado, Cyril Buttay, Hélène Frémont, Alexandrine Guédon-Gracia, Hervé Morel
2017 J jnl
Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling.
Microelectron. Reliab.
Wissam Sabbah, Faical Arabi, Oriol Avino-Salvado, Cyril Buttay, L. Théolier, Hervé Morel
2017 A conf
On the extraction of the design parameters of power BJTs.
ICCAD
Mehrez Oueslati, Hatem Garrab, Atef Jedidi, Hervé Morel, Kamel Besbes
2017 J jnl
SiC power devices packaging with a short-circuit failure mode capability.
Microelectron. Reliab.
Ilyas Dchar, Cyril Buttay, Hervé Morel
2016 J jnl
Avalanche robustness of SiC Schottky diode.
Microelectron. Reliab.
Ilyas Dchar, Cyril Buttay, Hervé Morel
2015 J jnl
A Novel Approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems.
IEEE Trans. Ind. Electron.
Atef Jedidi, Hatem Garrab, Hervé Morel, Kamel Besbes
2015 J jnl
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs.
Microelectron. Reliab.
Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickael Petit, Cyril Buttay, Hervé Morel
2011 J jnl
Inverse Models of Voltage and Current Probes.
IEEE Trans. Instrum. Meas.
Kaiçar Ammous, Hervé Morel, Anis Ammous
2010 J jnl
Analysis of Power Switching Losses Accounting Probe Modeling.
IEEE Trans. Instrum. Meas.
Kaiçar Ammous, Hervé Morel, Anis Ammous
2010 J jnl
Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications.
Sensors
Tarek Ben Salah, Sofiane Khachroumi, Hervé Morel
2001 J jnl
On the validity of the standard SPICE model of the diode for simulation in power electronics.
IEEE Trans. Ind. Electron.
Nouri Massmoudi, Djébé M'bairi, Bruno Allard, Hervé Morel